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BSS44

Description
Bipolar Transistors - BJT PNP General Purpose
CategoryDiscrete semiconductor    The transistor   
File Size53KB,4 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
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Bipolar Transistors - BJT PNP General Purpose

BSS44 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSTMicroelectronics
Parts packaging codeTO-39
package instructionMETAL, TO-39, 3 PIN
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Shell connectionCOLLECTOR
Maximum collector current (IC)5 A
Collector-based maximum capacity100 pF
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JEDEC-95 codeTO-39
JESD-30 codeO-MBCY-W3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power consumption environment5 W
Maximum power dissipation(Abs)0.87 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)80 MHz
VCEsat-Max1 V
Base Number Matches1
®
BSS44
SILICON PNP TRANSISTOR
s
s
STMicroelectronics PREFERRED
SALESTYPE
PNP TRANSISTOR
DESCRIPTION
The BSS44 is a silicon epitaxial planar PNP
transistor in Jedec TO-39 metal case. It is used
for high-current switching and power applications
up to 5 A.
TO-39
ABSOLUTE MAXIMUM RATINGS
O
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
so
b
te
le
ro
P
uc
d
s)
t(
so
b
-O
INTERNAL SCHEMATIC DIAGRAM
P
te
le
od
r
s)
t(
uc
Parameter
Collector-Base Voltage (I
E
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Total Dissipation at T
case
25 C
T
amb
25
o
C
Storage Temperature
o
Value
- 65
- 60
-6
-5
5
0.87
-65 to 200
200
Unit
V
V
V
A
W
W
o
o
C
C
1/4
Max. Operating Junction Temperature
December 2000

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