e. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S12-1860-Rev. B, 13-Aug-12
Document Number: 67066
1
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQS484EN
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 10 V
V
GS
= 10 V
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V
V
GS
= 10 V
V
GS
= 4.5 V
Forward Transconductance
b
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resitance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
Pulsed Current
a
Forward Voltage
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
I
SM
V
SD
I
F
= 10 A, V
GS
= 0
V
DD
= 20 V, R
L
= 2
I
D
10 A, V
GEN
= 10 V, R
g
= 1
f = 1 MHz
V
GS
= 10 V
V
DS
= 20 V, I
D
= 16.2 A
V
GS
= 0 V
V
DS
= 25 V, f = 1 MHz
-
-
-
-
-
-
5
-
-
-
-
-
-
1484
216
84
25.5
4.8
4.0
10
8
14
48
20
-
0.8
1855
270
105
39
-
-
20
12
21
72
30
64
1.2
A
V
ns
nC
pF
g
fs
V
DS
= 40 V
V
DS
= 40 V, T
J
= 125 °C
V
DS
= 40 V, T
J
= 175 °C
V
DS
5
V
I
D
= 16.4 A
I
D
= 16.4 A, T
J
= 125 °C
I
D
= 16.4 A, T
J
= 175 °C
I
D
= 16.4 A
40
1.5
-
-
-
-
20
-
-
-
-
-
-
2.0
-
-
-
-
-
0.008
-
-
0.009
77
-
2.5
± 100
1
50
150
-
0.009
0.023
0.024
0.01
-
S
A
μA
V
nA
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
= 15 V, I
D
= 16.4 A
Source-Drain Diode Ratings and Characteristics
b
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S12-1860-Rev. B, 13-Aug-12
Document Number: 67066
2
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQS484EN
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
Vishay Siliconix
60
V
GS
= 10 V thru 4 V
60
48
48
I
D
- Drain Current (A)
36
I
D
- Drain Current (A)
36
24
V
GS
= 3 V
12
24
T
C
= 25
°C
12
T
C
= 125
°C
T
C
= - 55
°C
5
0
0
2
4
6
8
V
DS
- Drain-to-Source Voltage (V)
10
0
0
1
2
3
4
V
GS
-
Gate-to-Source
Voltage (V)
Output Characteristics
10
120
Transfer Characteristics
8
g
fs
- Transconductance (S)
I
D
- Drain Current (A)
100
T
C
= - 55
°C
T
C
= 25
°C
80
6
60
T
C
= 125
°C
4
T
C
= 25
°C
40
2
T
C
= 125
°C
T
C
= - 55
°C
0
0
1
2
3
4
V
GS
-
Gate-to-Source
Voltage (V)
5
20
0
0
5
10
15
I
D
- Drain Current (A)
20
25
Transfer Characteristics
Transconductance
0.020
2000
0.016
R
DS(on)
- On-Resistance (Ω)
1500
0.012
V
GS
= 4.5V
C
iss
C - Capacitance (pF)
1000
0.008
V
GS
= 10V
500
0.004
C
rss
0
10
20
30
V
DS
- Drain-to-Source Voltage (V)
40
C
oss
0.000
0
12
24
36
48
60
I
D
- Drain Current (A)
0
On-Resistance vs. Drain Current
Capacitance
S12-1860-Rev. B, 13-Aug-12
Document Number: 67066
3
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQS484EN
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
10
Vishay Siliconix
2.0
R
DS(on)
- On-Resistance (Normalized)
I
D
= 16.2 A
V
GS
-
Gate-to-Source
Voltage (V)
I
D
= 16.4 A
1.7
V
GS
= 10 V
8
V
DS
= 20 V
6
1.4
V
GS
= 4.5 V
1.1
4
2
0.8
0
0
5
10
15
20
Q
g
- Total
Gate
Charge (nC)
25
30
0.5
- 50 - 25
0
25
50
75 100 125
T
J
- Junction Temperature (°C)
150
175
Gate Charge
100
On-Resistance vs. Junction Temperature
0.05
10
0.04
T
J
= 150
°C
R
DS(on)
- On-Resistance (Ω)
I
S
-
Source
Current (A)
1
T
J
= 25
°C
0.1
0.03
0.02
T
J
= 150
°C
0.01
T
J
= 25
°C
0.01
0.001
0.0
0.00
0.2
0.4
0.6
0.8
1.0
V
SD
-
Source-to-Drain
Voltage (V)
1.2
0
2
4
6
8
V
GS
-
Gate-to-Source
Voltage (V)
10
Source Drain Diode Forward Voltage
0.5
On-Resistance vs. Gate-to-Source Voltage
50
I
D
= 1 mA
0.1
V
DS
- Drain-to-Source Voltage (V)
175
48
V
GS(th)
Variance (V)
46
-0.3
I
D
= 5 mA
44
-0.7
42
I
D
= 250 μA
-1.1
40
-1.5
- 0 - 25
5
0
25
50
75
100
125
150
38
- 50 - 25
T
J
- Temperature (°C)
0
25
50
75 100 125
T
J
- Junction Temperature (°C)
150
175
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
S12-1860-Rev. B, 13-Aug-12
Document Number: 67066
4
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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