ZTX458STOA datasheet, PDF - EEWORLD Datasheet

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ZTX458STOA: DescriptionBipolar Transistors - BJT NPN High Voltage; Categorysemiconductor Discrete semiconductor; File Size75KB，2 Pages; ManufacturerDiodes; Websitehttp://www.diodes.com/

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ZTX458STOA Overview

Bipolar Transistors - BJT NPN High Voltage

ZTX458STOA Parametric

Parameter Name	Attribute value
Product Category	Bipolar Transistors - BJT
Manufacturer	Diodes
RoHS	Details
Mounting Style	Through Hole
Package / Case	TO-92-3
Transistor Polarity	NPN
Configuration	Single
Collector- Emitter Voltage VCEO Max	400 V
Collector- Base Voltage VCBO	400 V
Emitter- Base Voltage VEBO	5 V
Maximum DC Collector Current	0.3 A
Gain Bandwidth Product fT	50 MHz
Maximum Operating Temperature	+ 150 C
Continuous Collector Current	0.3 A
Height	4.01 mm
Length	4.77 mm
Minimum Operating Temperature	- 55 C
Packaging	Bulk
Pd - Power Dissipation	1 W
Factory Pack Quantity	4000
Width	2.41 mm
Unit Weight	0.016000 oz

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NPN SILICON PLANAR MEDIUM POWER

HIGH VOLTAGE TRANSISTOR

ISSUE 2 MARCH 1994

FEATURES

* 400 Volt V

CEO

* 0.5 Amp continuous current

* P

tot

= 1 Watt

ZTX458

C

B

E

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

PARAMETER

SYMBOL

V

(BR)CBO

V

CEO(sus)

V

(BR)EBO

I

CBO

I

CES

I

EBO

V

CE(sat)

V

BE(sat)

V

BE(on)

h

FE

f

T

C

obo

100

15

50

5

MIN.

SYMBOL

V

CBO

V

CEO

V

EBO

I

C

P

tot

T

j

:T

stg

TYP.

MAX.

E-Line

TO92 Compatible

VALUE

400

5

300

1

-55 to +200

UNIT

V

100

0.2

0.5

0.9

300

MHz

pF

nA

V

CONDITIONS.

I

C

=100

µ

A

I

C

=10mA*

I

E

=100

µ

A

V

CB

=320V

VCE=320V

V

EB

=4V

I

C

=20mA, I

B

=2mA

I

C

=50mA, I

B

=6mA

I

C

=50mA, I

B

=5mA

IC=50mA, V

CE

=10V

I

C

=1mA, V

CE

=10V

I

C

=50mA, V

CE

=10V

I

C

=100mA, V

CE

=10V*

I

C

=10mA, V

CE

=20V

f=20MHz

V

CB

=20V, f=1MHz

UNIT

V

mA

W

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C).

Collector-Base

Breakdown Voltage

Collector-Emitter

Breakdown Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

Collector Cut-Off

Current

Emitter Cut-Off Current

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

Base-Emitter

Turn On Voltage

Static Forward Current

Transfer Ratio

Transition Frequency

Collector-Base

Breakdown Voltage

400

5

3-182

ZTX458STOA Related Products

	ZTX458STOA	ZTX458STOB
Description	Bipolar Transistors - BJT NPN High Voltage	Bipolar Transistors - BJT NPN High Voltage
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT
Manufacturer	Diodes	Diodes
RoHS	Details	Details
Mounting Style	Through Hole	Through Hole
Package / Case	TO-92-3	TO-92-3
Transistor Polarity	NPN	NPN
Configuration	Single	Single
Collector- Emitter Voltage VCEO Max	400 V	400 V
Collector- Base Voltage VCBO	400 V	400 V
Emitter- Base Voltage VEBO	5 V	5 V
Maximum DC Collector Current	0.3 A	0.3 A
Gain Bandwidth Product fT	50 MHz	50 MHz
Maximum Operating Temperature	+ 150 C	+ 150 C
Continuous Collector Current	0.3 A	0.3 A
Height	4.01 mm	4.01 mm
Length	4.77 mm	4.77 mm
Minimum Operating Temperature	- 55 C	- 55 C
Packaging	Bulk	Bulk
Pd - Power Dissipation	1 W	1 W
Factory Pack Quantity	4000	4000
Width	2.41 mm	2.41 mm
Unit Weight	0.016000 oz	0.016000 oz

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