2SK3826
Ordering number : ENN8243
2SK3826
Features
•
•
•
•
•
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Low ON-resistance.
4V drive.
Ultrahigh-speed switching.
Motor drive, DC / DC converter.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
EAS
IAV
PW≤10µs, duty cycle≤1%
Tc=25°C
Conditions
Ratings
100
±20
26
104
1.75
45
150
--55 to +150
80
26
Unit
V
V
A
A
W
W
°C
°C
mJ
A
Note :
*1
VDD=20V, L=200µH, IAV=26A
*2
L≤200µH, Single pulse
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
ID=1mA, VGS=0
VDS=100V, VGS=0
VGS=
±16V,
VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=13A
ID=13A, VGS=10V
ID=13A, VGS=4V
1.2
11
19
46
57
60
80
Conditions
Ratings
min
100
1
±10
2.6
typ
max
Unit
V
µ
A
µ
A
V
S
mΩ
mΩ
Marking : K3826
Continued on next page.
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
www.onsemi.com
Rev.0 I Page 1 of 4 I www.onsemi.com
Publication Order Number:
2SK3826/D
2SK3826
Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=50V, VGS=10V, ID=26A
VDS=50V, VGS=10V, ID=26A
VDS=50V, VGS=10V, ID=26A
IS=26A, VGS=0
Ratings
min
typ
2150
160
110
20
34
185
62
42
7.2
9.2
1.0
1.2
max
Unit
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Package Dimensions
unit : mm
2052C
10.2
3.6
5.1
4.5
1.3
18.0
5.6
1.2
0.8
14.0
15.1
2.7
6.3
0.4
1 2 3
2.7
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220
2.55
2.55
Switching Time Test Circuit
VIN
10V
0V
VIN
ID=13A
RL=3.85Ω
VDD=50V
Avalanche Resistance Test Circuit
L
≥50Ω
D
PW=10µs
D.C.≤1%
VOUT
2SK3826
G
10V
0V
50Ω
VDD
2SK3826
P.G
50Ω
S
Rev.0 I Page 2 of 4 I www.onsemi.com
2SK3826
50
ID -- VDS
Tc=25°C
50
ID -- VGS
Tc=
--25
°
25
°
C
C
1.5
2.0
45
40
8V
10
V
6V
Drain Current, ID -- A
4V
45
40
35
30
25
20
Drain Current, ID -- A
35
30
25
20
15
10
5
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VGS=3V
5
0
0
0.5
1.0
25
°
C
Tc=
10
2.5
7 5
°
C
--25
°
C
15
3.0
3.5
4.0
4.5
75
°
C
5.0
IT08869
125
150
IT08871
VDS=10V
Drain-to-Source Voltage, VDS -- V
120
IT08868
130
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Tc
ID=13A
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
110
100
90
80
70
60
50
40
120
110
100
90
80
70
60
50
40
30
20
10
Tc=75
°C
=
ID
A
13
,V
=4
GS
V
V
25°C
--25°C
13
I D=
A
=10
GS
,V
30
20
2
3
4
5
6
7
8
9
10
IT08870
0
--50
--25
0
25
50
75
100
Gate-to-Source Voltage, VGS -- V
7
Case Temperature, Tc --
°
C
100
7
5
3
2
y
fs -- ID
IF -- VSD
VGS=0
Forward Transfer Admittance,
y
fs -- S
5
3
VDS=10V
10
7
5
3
2
1.0
7
5
3
0.1
2
3
5
7 1.0
2
=
Tc
--2
°
C
25
5
°
C
Forward Current, IF -- A
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0
0.3
°
C
75
3
5
7 10
2
3
5
7
Tc=75
°
C
25
°
C
--25
°
C
0.6
0.9
1.2
1.5
IT08873
Drain Current, ID -- A
5
3
IT08872
5
Diode Forward Voltage, VSD -- V
SW Time -- ID
td(off)
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
VDD=50V
VGS=10V
3
2
Switching Time, SW Time -- ns
2
Ciss, Coss, Crss -- pF
100
7
5
3
2
1000
tf
7
5
3
2
td(on)
tr
Coss
Crss
100
10
7
0.1
2
3
5
7 1.0
2
3
5
7 10
2
3
5
7
5
0
5
10
15
20
25
30
IT08875
Drain Current, ID -- A
IT08874
Drain-to-Source Voltage, VDS -- V
Rev.0 I Page 3 of 4 I www.onsemi.com
2SK3826
10
9
VGS -- Qg
VDS=50V
ID=26A
Drain Current, ID -- A
2
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
ASO
IDP=104A
ID=26A
DC
Gate-to-Source Voltage, VGS -- V
8
7
6
5
4
3
2
1
0
0
5
10
15
20
25
30
35
40
45
10
op
era
m
0m
s
s
n
10
<10
µ
s
10
µ
s
10
0
µ
s
1m
s
Operation in
this area is
limited by RDS(on).
tio
0.1
0.1
Tc=25°C
Single pulse
2
3
5 7 1.0
2
3
5 7 10
2
3
Total Gate Charge, Qg -- nC
2.0
IT08876
60
PD -- Ta
Allowable Power Dissipation, PD -- W
Drain-to-Source Voltage, VDS --
5 7 100
2
IT08877
V
PD -- Tc
Allowable Power Dissipation, PD -- W
1.75
1.5
50
45
40
1.0
30
20
0.5
10
0
0
20
40
60
80
100
120
140
160
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
IT08843
Case Temperature, Tc --
°C
IT08845
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2SK3826/D
Microcontroller MCU
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