BZT52B2V4S - BZT52B75S
Taiwan Semiconductor
200mW, 2% Tolerance SMD Zener Diodes
FEATURES
●
●
●
●
Wide zener voltage range selection: 2.4V to 75V
VZ tolerance selection of ± 2%
Surface device type mountin
Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
V
Z
Test current I
ZT
P
tot
V
F
at I
F
=10mA
T
J
Max.
Package
Configuration
VALUE
2.4-75
5
200
1
150
UNIT
V
mA
mW
V
°C
APPLICATIONS
● Low voltage stabilzers or voltage references
● Adapters
● On-board DC/DC converter
SOD-323F
Single dice
MECHANICAL DATA
●
●
●
●
Case: SOD-323F
Molding compound meets UL 94 V-0 flammability rating
Moisture sensitivity level: level 1, per J-STD-020
Packing code with suffix "G" means green compound
(halogen-free)
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Polarity: Indicated by cathode band
● Weight: 4.02 ± 0.5mg (approximately)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Forward voltage @ I
F
=10mA
Total power dissipation
Junction temperature range
Storage temperature range
SYMBOL
V
F
P
tot
T
J
T
STG
VALUE
1
200
-65 to +150
-65 to +150
UNIT
V
mW
°C
°C
THERMAL PERFORMANCE
PARAMETER
Junction-to-ambient thermal resistance
SYMBOL
R
ӨJA
LIMIT
625
UNIT
°C/W
1
Version:F1709
BZT52B2V4S - BZT52B75S
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
ZENER VOLTAGE
PART
NUMBER
MARKING
CODE
Min.
BZT52B2V4S
BZT52B2V7S
BZT52B3V0S
BZT52B3V3S
BZT52B3V6S
BZT52B3V9S
BZT52B4V3S
BZT52B4V7S
BZT52B5V1S
BZT52B5V6S
BZT52B6V2S
BZT52B6V8S
BZT52B7V5S
BZT52B8V2S
BZT52B9V1S
BZT52B10S
BZT52B11S
BZT52B12S
BZT52B13S
BZT52B15S
BZT52B16S
BZT52B18S
BZT52B20S
BZT52B22S
BZT52B24S
BZT52B27S
BZT52B30S
BZT52B33S
BZT52B36S
BZT52B39S
BZT52B43S
BZT52B47S
BZT52B51S
BZT52B56S
BZT52B62S
BZT52B68S
BZT52B75S
0Z
1Z
2Z
3Z
4Z
5Z
6Z
7Z
8Z
9Z
AZ
BZ
CZ
DZ
EZ
FZ
GZ
HZ
JZ
KZ
LZ
MZ
NZ
PZ
RZ
SZ
TZ
UZ
VZ
WZ
XZ
YZ
－Z
＝Z
≡Z
＞Z
＜Z
2.35
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5.00
5.49
6.08
6.66
7.35
8.04
8.92
9.80
10.78
11.76
12.74
14.70
15.68
17.64
19.60
21.56
23.52
26.46
29.40
32.34
35.28
38.22
42.14
46.06
49.98
54.88
60.76
66.64
73.50
V
Z
@ I
ZT
V
Nom.
2.40
2.70
3.00
3.30
3.60
3.90
4.30
4.70
5.10
5.60
6.20
6.80
7.50
8.20
9.10
10.00
11.00
12.00
13.00
15.00
16.00
18.00
20.00
22.00
24.00
27.00
30.00
33.00
36.00
39.00
43.00
47.00
51.00
56.00
62.00
68.00
75.00
Max.
2.45
2.75
3.06
3.37
3.67
3.98
4.39
4.79
5.20
5.71
6.32
6.94
7.65
8.36
9.28
10.20
11.22
12.24
13.26
15.30
16.32
18.36
20.40
22.44
24.48
27.54
30.60
33.66
36.72
39.78
43.86
47.94
52.02
57.12
63.24
69.36
76.50
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
2
2
2
2
2
2
2
TEST
CURRENT
I
ZT
mA
REGULAR
IMPEDANCE
Z
ZT
@ I
ZT
Ω
Max.
100
100
100
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
80
80
80
90
130
150
170
180
200
215
240
255
Z
ZK
@ I
ZK
Ω
Max.
564
564
564
564
564
564
564
470
451
376
141
75
75
75
94
141
141
141
160
188
188
212
212
235
235
282
282
306
329
329
353
353
376
400
423
447
470
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
TEST
CURRENT
I
ZK
mA
LEAKAGE
CURRENT
I
R
@ V
R
µA
Max.
45
18
9
4.5
4.5
2.7
2.7
2.7
1.8
0.9
2.7
1.8
0.9
0.63
0.45
0.18
0.09
0.09
0.09
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
1
1
1
1
1
1
1
2.0
2.0
2.0
4.0
4.0
5.0
5.0
6.0
7.0
8.0
8.0
8.0
10.5
11.2
12.6
14.0
15.4
16.8
18.9
21.0
23.0
25.2
27.3
30.1
33.0
35.7
39.2
43.4
47.6
52.5
V
2
Version:F1709
BZT52B2V4S - BZT52B75S
Taiwan Semiconductor
Notes:
1. The Zener Voltage (V
Z
) is tested under pulse condition of 10ms.
2. The device numbers listed have a standard tolerance on the normal zener voltage of ±2%.
3. For detailed information on price, availability and delivery of normal zener voltages between the voltages
shown and tighter voltage tolerances, contact your nearest Taiwan Semiconductor representative.
4. The Zener impedance is derived from the 60-cycle ac voltage, which results when an ac current
having an RMS value equal to 10% of the dc zener current(I
ZT
or I
ZK
) is superimposed to I
ZT
or I
ZK
.
ORDERING INFORMATION
PART NO.
BZT52BXXXS
(Note 1)
PACKING
CODE
RR
G
R9
SOD-323F
10K / 13" Reel
PACKING CODE
SUFFIX(*)
PACKAGE
PACKING
3K / 7" Reel
Notes:
1. "xxx" is device code from "2V4" to "75", detail could follow the previous page
*: optional available
EXAMPLE
EXAMPLE P/N
PART NO.
PACKING CODE
RR
PACKING CODE
SUFFIX
G
DESCRIPTION
Green compound
BZT52B2V4S RRG BZT52B2V4S
3
Version:F1709
BZT52B2V4S - BZT52B75S
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.1 Typical Forward Characteristics
1000
100
Fig. 2 Zener Breakdown Characteristics
Forward Current (mA)
100
Zener Current (mA)
T
A
=25
o
C
10
T
A
=25
o
C
1
10
0.1
1
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0.01
0
1
2
3
4
5
6
7
8
9
10 11 12
Forward Voltage (V)
Zener Voltage (V)
Fig. 3 Zener Breakdown Characteristics
100
700
600
Zener Current (mA)
10
Power Dissipation (mW)
500
400
300
200
100
0.01
15
25
35
45
55
65
75
85
0
0
Fig.4 Power Dissipation Curve
1
0.1
50
100
150
o
200
Zener Voltage (V)
Ambient Temperature ( C)
4
Version:F1709
BZT52B2V4S - BZT52B75S
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.5 Typical Capacitance
1000
Fig.6 Effect of Zener Voltage on Impedence
1000
I
Z
=5mA
Capacitance (pF)
1V Bias
100
Dynamic Impedence(Ohm)
I
Z
=1mA
100
10
Bias at 50% of
V
Z
(Nom)
10
I
Z
=120mA
1
1
10
Zener Voltage (V)
100
1
1
10
Zener Voltage (V)
100
5
Version:F1709
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