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B10S-G

Description
Ferrite Beads 600ohms 1A 150mOhms 0603 Ferrite Chip
CategoryDiscrete semiconductor    diode   
File Size53KB,2 Pages
ManufacturerComchip Technology
Websitehttp://www.comchiptech.com/
Environmental Compliance
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Ferrite Beads 600ohms 1A 150mOhms 0603 Ferrite Chip

B10S-G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerComchip Technology
package instructionR-PDSO-G4
Reach Compliance Codecompliant
ECCN codeEAR99
Samacsys DescriptionRECTIFIER BRIDGE GPP 1000V 0.8A MBS COMCHIP TECHNOLOGY B10S-G, Bridge Rectifier, 0.8A 1000V, 4-Pin MBS
Other featuresUL RECOGNIZED
Minimum breakdown voltage1000 V
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JESD-30 codeR-PDSO-G4
Maximum non-repetitive peak forward current30 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current0.8 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage1000 V
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Surface Mount Glass Passivated Bridge Rectifiers
B05S-G thru B10S-G
"-G" : RoHS Device
REVERSE VOLTAGE
- 50
to
1000
Volts
FORWARD CURRENT
- 0.8
Amperes
MBS
.275(7.0)MAX
.067(1.7)
.057(1.3)
.051(1.3)
.035(0.9)
.165(4.2)
.150(3.8)
FEATURES
- Rating to 1000V PRV
- Ideal for printed circuit board
- Reliable low cost construction utilizing
molded plastic technique results in inexpensive product
- Lead tin plated copper
~ ~
+ -
.031(0.8)
.019(0.5)
.106(2.7)
.09(2.3)
.193(4.9)
.177(4.5)
.014(.35)
.006(.15)
MECHANICAL DATA
- Polarity:Symbol molded on body
- Weight: 0.0044 ounces,0.125 grams
- Mounting position :Any
.043(1.1)
.027(0.7)
.067(1.7)
.057(1.3)
.106(2.7)
.09(2.3)
.008(0.2)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current (Note 1)
Peak Forward Surage Current
8.3ms Single Half Sine-Wave
Super Imposed on Rated Load(JEDEC Method)
Peak Forward Voltage at 0.8A DC
Maximum DC Reverse Current
at Rated DC Bolcking Voltage
@T
J
=25
@T
J
=125
@T
A
=40
SYMBOL
V
RRM
V
RMS
V
DC
I
(AV)
B05S
50
35
50
B1S
100
70
100
B2S
200
140
200
B4S
400
280
400
0.8
B6S
600
420
600
B8S
800
560
800
B10S
1000
700
1000
UNIT
V
V
V
A
I
FSM
V
F
I
R
C
J
R
θJC
T
J
T
STG
40
1.1
5.0
500
15
75
-55 to +150
-55 to +150
A
V
µA
pF
/W
Tyical Junction Capacitance Per Element (Note2)
Tyical Thermal Resistance (Note3)
Operating Temperature Range
Storage Temperature Range
NOTES:1.Mounted on P.C. board.
2.Measured at1.0MHz and applied reverse voltage of 4.0V DC.
3.Thermal resistance junction to ambient.
MDS0905001A
Page 1

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