IPB120N04S4-02
IPI120N04S4-02, IPP120N04S4-02
OptiMOS -T2 Power-Transistor
®
Product Summary
V
DS
R
DS(on),max
(SMD version)
I
D
40
1.8
120
PG-TO262-3-1
V
mΩ
A
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
PG-TO263-3-2
PG-TO220-3-1
Type
IPB120N04S4-02
IPI120N04S4-02
IPP120N04S4-02
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
4N0402
4N0402
4N0402
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
1)
Symbol
I
D
Conditions
T
C
=25°C,
V
GS
=10V
T
C
=100°C,
V
GS
=10V
2)
Pulsed drain current
2)
Avalanche energy, single pulse
2)
Avalanche current, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
I
D,pulse
E
AS
I
AS
V
GS
P
tot
T
j
,
T
stg
-
T
C
=25°C
I
D
=60A
-
-
T
C
=25°C
-
-
Value
120
120
480
480
120
±20
158
-55 ... +175
55/175/56
mJ
A
V
W
°C
Unit
A
Rev. 1.0
page 1
2010-04-06
IPB120N04S4-02
IPI120N04S4-02, IPP120N04S4-02
Parameter
Symbol
Conditions
min.
Thermal characteristics
2)
Thermal resistance, junction - case
Thermal resistance, junction -
ambient, leaded
SMD version, device on PCB
R
thJC
R
thJA
R
thJA
-
-
minimal footprint
6 cm
2
cooling area
3)
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSS
V
GS
=0V,
I
D
= 1mA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
=110µA
V
DS
=40V,
V
GS
=0V
V
DS
=18V,
V
GS
=0V,
T
j
=85°C
2)
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=20V,
V
DS
=0V
V
GS
=10V,
I
D
=100A
V
GS
=10V,
I
D
=100A,
SMD version
40
2.0
-
-
-
-
-
-
3.0
0.05
1
-
1.88
1.58
-
4.0
1
20
100
2.1
1.8
nA
mΩ
µA
V
-
-
-
-
-
-
-
-
0.95
62
62
40
K/W
Values
typ.
max.
Unit
Rev. 1.0
page 2
2010-04-06
IPB120N04S4-02
IPI120N04S4-02, IPP120N04S4-02
Parameter
Symbol
Conditions
min.
Dynamic characteristics
2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
2)
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
2)
Diode pulse current
2)
Diode forward voltage
I
S
I
S,pulse
V
SD
T
C
=25°C
V
GS
=0V,
I
F
=100A,
T
j
=25°C
V
R
=20V,
I
F
=50A,
di
F
/dt =100A/µs
-
-
-
-
-
0.9
120
480
1.3
V
A
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=32V,
I
D
=120A,
V
GS
=0 to 10V
-
-
-
-
44
14
103
5.3
57
32
134
-
V
nC
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=20V,
V
GS
=10V,
I
D
=120A,
R
G
=3.5Ω
V
GS
=0V,
V
DS
=25V,
f
=1MHz
-
-
-
-
-
-
-
8260
1850
60
27
16
30
30
10740 pF
2405
138
-
-
-
-
ns
Values
typ.
max.
Unit
Reverse recovery time
2)
t
rr
-
60
-
ns
Reverse recovery charge
2)
1)
Q
rr
-
65
-
nC
Current is limited by bondwire; with an
R
thJC
= 0.95K/W the chip is able to carry 229A at 25°C.
Defined by design. Not subject to production test.
2)
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2010-04-06
IPB120N04S4-02
IPI120N04S4-02, IPP120N04S4-02
1 Power dissipation
P
tot
= f(T
C
);
V
GS
≥
6 V
2 Drain current
I
D
= f(T
C
);
V
GS
≥
6 V; SMD
175
140
150
120
125
100
P
tot
[W]
100
80
75
I
D
[A]
0
50
100
150
200
60
50
40
25
20
0
0
0
50
100
150
200
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
= f(V
DS
);
T
C
= 25 °C;
D
= 0; SMD
parameter:
t
p
1000
1 µs
4 Max. transient thermal impedance
Z
thJC
= f(t
p
)
parameter:
D
=t
p
/T
10
0
0.5
10 µs
100
100 µs
10
-1
0.1
Z
thJC
[K/W]
I
D
[A]
0.05
1 ms
0.01
10
10
-2
single pulse
1
0.1
1
10
100
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
Rev. 1.0
page 4
2010-04-06
IPB120N04S4-02
IPI120N04S4-02, IPP120N04S4-02
5 Typ. output characteristics
I
D
= f(V
DS
);
T
j
= 25 °C; SMD
parameter:
V
GS
480
10 V
6 Typ. drain-source on-state resistance
R
DS(on)
= f(I
D
);
T
j
= 25 °C; SMD
parameter:
V
GS
11
5V
5.5 V
6V
6.5 V
420
6.5 V
9
360
300
240
180
120
60
0
0
1
2
3
4
5.5 V
6V
R
DS(on)
[mΩ]
7
I
D
[A]
5
3
5V
10 V
1
0
120
240
360
480
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
= f(V
GS
);
V
DS
= 6V
parameter:
T
j
480
420
8 Typ. drain-source on-state resistance
R
DS(on)
= f(T
j
);
I
D
= 100 A;
V
GS
= 10 V; SMD
3
2.5
360
300
R
DS(on)
[m
Ω
]
175 °C
25 °C
-55 °C
2
I
D
[A]
240
180
120
60
0
3
4
5
6
7
1.5
1
0.5
-60
-20
20
60
100
140
180
V
GS
[V]
T
j
[°C]
Rev. 1.0
page 5
2010-04-06
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