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BFP720FESDH6327XTSA1

Description
RF Bipolar Transistors RF BIP TRANSISTORS
CategoryDiscrete semiconductor    The transistor   
File Size1MB,28 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BFP720FESDH6327XTSA1 Overview

RF Bipolar Transistors RF BIP TRANSISTORS

BFP720FESDH6327XTSA1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
package instructionSMALL OUTLINE, R-PDSO-F4
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time10 weeks
Maximum collector current (IC)0.03 A
Collector-emitter maximum voltage4.2 V
ConfigurationSINGLE
highest frequency bandX BAND
JESD-30 codeR-PDSO-F4
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals4
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
GuidelineAEC-Q101
surface mountYES
Terminal surfaceTin (Sn)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON GERMANIUM CARBON
Nominal transition frequency (fT)45000 MHz
Base Number Matches1
BFP720FESD
Robust Low Noise Silicon Germanium Bipolar RF Transistor
Data Sheet
Revision 1.2, 2012-10-16
RF & Protection Devices

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