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BUK9675-100A118

Description
Board Mount Pressure Sensors PORTED SOP INTEGRATED
Categorysemiconductor    Discrete semiconductor   
File Size709KB,12 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BUK9675-100A118 Overview

Board Mount Pressure Sensors PORTED SOP INTEGRATED

BUK9675-100A118 Parametric

Parameter NameAttribute value
Product CategoryMOSFET
ManufacturerNXP
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTO-263-3
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage100 V
Id - Continuous Drain Current23 A
Rds On - Drain-Source Resistance72 mOhms
Vgs - Gate-Source Voltage15 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
ConfigurationSingle
Channel ModeEnhancement
PackagingReel
PackagingMouseReel
PackagingCut Tape
Fall Time57 ns
Height4.5 mm
Length10.3 mm
Pd - Power Dissipation98 W
Rise Time120 ns
Factory Pack Quantity800
Transistor Type1 N-Channel
Typical Turn-Off Delay Time58 ns
Typical Turn-On Delay Time13 ns
Width9.4 mm
BUK9675-100A
18 August 2015
N-channel TrenchMOS logic level FET
Product data sheet
1. General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
2. Features and benefits
AEC Q101 compliant
Low conduction losses due to low on-state resistance
3. Applications
Automotive and general purpose power switching
4. Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
Conditions
T
j
≥ 25 °C; T
j
≤ 175 °C
V
GS
= 5 V; T
mb
= 25 °C;
Fig. 2
T
mb
= 25 °C;
Fig. 1
V
GS
= 10 V; I
D
= 10 A; T
j
= 25 °C;
Fig. 12
V
GS
= 5 V; I
D
= 10 A; T
j
= 25 °C;
Fig. 12
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-
source avalanche
energy
[1]
[2]
Min
-
-
-
Typ
-
-
-
Max
100
23
98
Unit
V
A
W
Static characteristics
drain-source on-state
resistance
-
-
55
60
72
75
I
D
= 23 A; V
sup
≤ 100 V; R
GS
= 50 Ω;
V
GS
= 5 V; T
j(init)
= 25 °C; unclamped;
Fig. 4
[1][2]
-
-
100
mJ
Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
Refer to application note AN10273 for further information.
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