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DISCRETE SEMICONDUCTORS
DATA SHEET
fpage
MBD128
PBSS5240Y
40 V low V
CEsat
PNP transistor
Product data sheet
Supersedes data of 2001 Oct 24
2002 Feb 28
NXP Semiconductors
Product data sheet
40 V low V
CEsat
PNP transistor
FEATURES
•
Low collector-emitter saturation voltage
•
High current capability
•
Improved device reliability due to reduced heat
generation
•
Replacement for SOT89/SOT223 standard packaged
transistors due to enhanced performance.
APPLICATIONS
•
Supply line switching circuits
•
Battery management applications
•
DC/DC converter applications
•
Strobe flash units
•
Heavy duty battery powered equipment (motor and lamp
drivers).
DESCRIPTION
PNP low V
CEsat
transistor in a SOT363 (SC-88) plastic
package.
NPN complement: PBSS4240Y.
MARKING
handbook, halfpage
PBSS5240Y
QUICK REFERENCE DATA
SYMBOL
V
CEO
I
CM
I
C
R
CEsat
PINNING
PIN
1
2
3
4
5
6
collector
collector
base
emitter
collector
collector
DESCRIPTION
PARAMETER
collector-emitter voltage
peak collector current
collector current (DC)
equivalent on-resistance
MAX.
−40
−3
−2
<200
UNIT
V
A
A
mΩ
6
5
4
1, 2, 5, 6
3
4
TYPE NUMBER
PBSS5240Y
Note
1. * = p: made in Hongkong.
* = t: made in Malaysia.
52*
MARKING
CODE
(1)
1
2
Top view
3
MAM464
Fig.1
Simplified outline (SOT363; SC-88) and
symbol.
2002 Feb 28
2
NXP Semiconductors
Product data sheet
40 V low V
CEsat
PNP transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Notes
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
T
amb
≤
25
°C;
note 2
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−
−65
−
−65
MIN.
PBSS5240Y
MAX.
−40
−40
−5
−2
−3
−300
270
430
+150
150
+150
V
V
V
A
A
UNIT
mA
mW
mW
°C
°C
°C
1. Device mounted on a printed-circuit board, single side copper, tinplated and standard footprint.
2. Device mounted on a printed-circuit board, single side copper, tinplated and mounting pad for collector 1 cm
2
.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
PARAMETER
thermal resistance from junction to
ambient
note 1
note 2
CONDITIONS
VALUE
463
291
UNIT
K/W
K/W
Notes
1. Device mounted on a printed-circuit board, single side copper, tinplated and standard footprint.
2. Device mounted on a printed-circuit board, single side copper, tinplated and mounting pad for collector 1 cm
2
.
2002 Feb 28
3
NXP Semiconductors
Product data sheet
40 V low V
CEsat
PNP transistor
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
CONDITIONS
−
−
−
300
260
210
100
−
−
−
−
−
−
−
−
V
CB
=
−30
V; I
E
= 0; T
j
= 150
°C
emitter-base cut-off current
DC current gain
V
EB
=
−4
V; I
C
= 0
V
CE
=
−2
V; I
C
=
−100
mA
V
CE
=
−2
V; I
C
=
−500
mA
V
CE
=
−2
V; I
C
=
−1
000 mA
V
CE
=
−2
V; I
C
=
−2
000 mA
V
CEsat
collector-emitter saturation
voltage
I
C
=
−100
mA; I
B
=
−1
mA
I
C
=
−500
mA; I
B
=
−50
mA
I
C
=
−750
mA; I
B
=
−15
mA
I
C
=
−1
000 mA; I
B
=
−50
mA
I
C
=
−2
000 mA; I
B
=
−200
mA
V
BEsat
V
BEon
C
c
F
T
base-emitter saturation
voltage
base-emitter turn-on voltage
collector capacitance
transition frequency
I
C
=
−2
000 mA; I
B
=
−200
mA
V
CE
=
−2
V; I
C
=
−100
mA
V
CB
=
−10
V; I
E
= I
e
= 0; f = 1 MHz
MIN.
PBSS5240Y
MAX.
−100
−50
−100
−
−
−
−
−100
−110
−225
−225
−350
−1.1
−0.75
40
−
UNIT
nA
μA
nA
collector-base cut-off current V
CB
=
−30
V; I
E
= 0
mV
mV
mV
mV
mV
V
V
pF
MHz
I
C
=
−100
mA; V
CE
=
−10
V; f = 100 MHz 100
2002 Feb 28
4
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