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BDW54D-S

Description
Darlington Transistors 120V 4A PNP
CategoryDiscrete semiconductor    The transistor   
File Size74KB,4 Pages
ManufacturerBourns
Websitehttp://www.bourns.com
Environmental Compliance
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BDW54D-S Overview

Darlington Transistors 120V 4A PNP

BDW54D-S Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerBourns
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)4 A
Collector-emitter maximum voltage120 V
ConfigurationDARLINGTON
Minimum DC current gain (hFE)100
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN SILVER COPPER
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
BDW54, BDW54A, BDW54B, BDW54C, BDW54D
PNP SILICON POWER DARLINGTONS
Designed for Complementary Use with
BDW53, BDW53A, BDW53B, BDW53C and
BDW53D
40 W at 25°C Case Temperature
B
TO-220 PACKAGE
(TOP VIEW)
1
2
3
4 A Continuous Collector Current
Minimum h
FE
of 750 at 3V, 1.5 A
C
E
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
BDW54
BDW54A
Collector-base voltage (I
E
= 0)
BDW54B
BDW54C
BDW54D
BDW54
BDW54A
Collector-emitter voltage (I
B
= 0) (see Note 1)
BDW54B
BDW54C
BDW54D
Emitter-base voltage
Continuous collector current
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Operating temperature range
Operating free-air temperature range
NOTES: 1.
2.
3.
4.
V
EBO
I
C
I
B
P
tot
P
tot
½LI
C
T
j
T
stg
T
A
2
SYMBOL
VALUE
-45
-60
UNIT
V
CBO
-80
-100
-120
-45
-60
V
V
CEO
-80
-100
-120
-5
-4
-50
40
2
25
-65 to +150
-65 to +150
-65 to +150
V
V
A
mA
W
W
mJ
°C
°C
°C
These values apply when the base-emitter diode is open circuited.
Derate linearly to 150°C case temperature at the rate of 0.32 W/°C.
Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
B(on)
= -5 mA, R
BE
= 100
Ω,
V
BE(off)
= 0, R
S
= 0.1
Ω,
V
CC
= -20 V.
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
1

BDW54D-S Related Products

BDW54D-S BDW54-S
Description Darlington Transistors 120V 4A PNP Darlington Transistors 100V 4A NPN
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
Maker Bourns Bourns
Parts packaging code TO-220AB TO-220AB
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 4 A 4 A
Collector-emitter maximum voltage 120 V 45 V
Configuration DARLINGTON DARLINGTON
Minimum DC current gain (hFE) 100 100
JEDEC-95 code TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3
JESD-609 code e1 e1
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type PNP PNP
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface TIN SILVER COPPER TIN SILVER COPPER
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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