BFG590; BFG590/X
NPN 5 GHz wideband transistors
Rev. 04 — 12 November 2007
Product data sheet
IMPORTANT NOTICE
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NXP Semiconductors
NXP
Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG590; BFG590/X
FEATURES
•
High power gain
•
Low noise figure
•
High transition frequency
•
Gold metallization ensures excellent reliability.
APPLICATIONS
•
MATV/CATV amplifiers and RF communications
subscriber equipment in the GHz range
•
Ideally suitable for use in class-A, (A)B and C amplifiers
with either pulsed or continuous drive.
PINNING
DESCRIPTION
PIN
BFG590
1
2
3
4
collector
base
emitter
emitter
BFG590/X
collector
emitter
base
emitter
handbook, 2 columns
4
3
DESCRIPTION
NPN silicon planar epitaxial transistor in a 4-pin
dual-emitter SOT143B plastic package.
MARKING
TYPE NUMBER
BFG590
BFG590/X
CODE
%MH
%MN
Fig.1 Simplified outline SOT143B.
1
Top view
2
MSB014
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CEO
I
C
P
tot
h
FE
C
re
f
T
G
UM
|S
21
|
2
PARAMETER
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum unilateral power gain
insertion power gain
T
s
≤
60
°C
I
C
= 35 mA; V
CE
= 8 V
I
C
= 0; V
CE
= 8 V; f = 1 MHz
I
C
= 80 mA; V
CE
= 4 V; f = 1 GHz
I
C
= 80 mA; V
CE
= 4 V;
f = 900 MHz; T
amb
= 25
°C
I
C
= 80 mA; V
CE
= 4 V;
f = 900 MHz; T
amb
= 25
°C
CONDITIONS
open emitter
open base
−
−
−
−
50
−
−
−
−
MIN.
−
−
−
−
90
0.7
5
13
11
TYP.
MAX.
20
15
200
400
280
−
−
−
−
pF
GHz
dB
dB
UNIT
V
V
mA
mW
Rev. 04 - 12 November 2007
2 of 11
NXP
Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG590; BFG590/X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
Note
1. T
s
is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
Note
1. T
s
is the temperature at the soldering point of the collector pin.
PARAMETER
thermal resistance from junction to soldering point
CONDITIONS
T
s
≤
60
°C;
note 1
VALUE
290
UNIT
K/W
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
T
s
≤
60
°C;
see Fig.2; note 1
open base
open collector
CONDITIONS
open emitter
−
−
−
−
−
−65
−
MIN.
MAX.
20
15
3
200
400
+150
175
V
V
V
mA
mW
°C
°C
UNIT
handbook, halfpage
600
MBG249
tot
(mW)
400
P
200
0
0
50
100
150
Ts (
o
C)
200
Fig.2 Power derating curve.
Rev. 04 - 12 November 2007
3 of 11
NXP
Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG590; BFG590/X
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE
f
T
C
re
G
UM
PARAMETER
collector-base breakdown voltage
emitter-base breakdown voltage
collector-base leakage current
DC current gain
transition frequency
feedback capacitance
maximum unilateral power gain;
note 1
CONDITIONS
I
C
= 0.1 mA; I
E
= 0
I
E
= 0.1 mA; I
C
= 0
V
CB
= 10 V; I
E
= 0
I
C
= 70 mA; V
CE
= 8 V; see Fig.3
I
C
= 80 mA; V
CE
= 4 V;
f = 1 GHz; see Fig.5
I
C
= 0; V
CB
= 8 V; f = 1 MHz;
see Fig.4
I
C
= 80 mA; V
CE
= 4 V;
f = 900 MHz; T
amb
= 25
°C
I
C
= 80 mA; V
CE
= 4 V; f = 2 GHz;
T
amb
= 25
°C
|S
21
|
2
Note
1. G
UM
is the maximum unilateral power gain, assuming S
12
is zero and G
UM
insertion power gain
I
C
= 80 mA; V
CE
= 4 V;
f = 900 MHz; T
amb
= 25
°C
MIN.
20
15
3
−
60
−
−
−
−
−
TYP.
−
−
−
−
120
5
0.7
13
7.5
11
MAX.
−
−
−
100
250
−
−
−
−
−
GHz
pF
dB
dB
dB
UNIT
V
V
V
nA
collector-emitter breakdown voltage I
C
= 10 mA; I
B
= 0
S
21 2
=
10 log -------------------------------------------------------------- dB.
(
1
–
S
11 2
) (
1
–
S
22 2
)
Rev. 04 - 12 November 2007
4 of 11
NXP
Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG590; BFG590/X
handbook, halfpage
250
MRA749
handbook, halfpage
1.2
MLC057
hFE
200
C re
(pF)
0.8
150
100
0.4
50
0
10
−2
10
−1
1
10
IC (mA)
10
2
0
0
2
4
6
8
10
VCB (V)
V
CE
= 8 V.
I
C
= 0; f = 1 MHz.
Fig.3
DC current gain as a function of collector
current; typical values.
Fig.4
Feedback capacitance as a function of
collector-base voltage; typical values.
handbook, halfpage
8
MLC058
fT
(GHz)
6
4
2
0
10
I C (mA)
10
2
V
CE =
4 V; f = 1 GHz.
Fig.5
Transition frequency as a function of
collector current; typical values.
Rev. 04 - 12 November 2007
5 of 11
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