• ZENER DIODES
•LEADLESS PACKAGE FOR SURFACE MOUNT
• DOUBLE PLUG CONSTRUCTION
• METALLURGICALLY BONDED
BZV55 C2V4
thru
BZV55 C75
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Power Derating: 3.33 mW / °C above +50°C
Forward Voltage: @ 200mA: 1.1 Volts maximum
ELECTRICAL CHARACTERISTICS
@ 25°C, unless otherwise specified.
MAXIMUM
DIFFERENTIAL
RESISTANCE
rdiff @ I Z
mA
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
2
2
2
2
2
2
2
OHMS
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
80
80
80
90
130
150
170
180
200
215
240
255
mA
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
2
2
2
2
2
2
2
50
20
10
5
5
3
3
3
2
1
3
2
1
.700
.500
.200
.100
.100
.100
.050
.050
.050
.050
.050
.050
.050
.050
.050
.050
.050
.050
.050
.050
.050
.050
.050
.050
MAXIMUM
REVERSE
CURRENT
IR @ VR
TYPE
ZENER VOLTAGE
(NOTE 1)
VZ @ I ZT
VOLTS
MIN
MAX
µ
A
VOLTS
1
1
1
1
1
1
1
2
2
2
4
4
5
5
6
7
8
8
8
10.5
11.2
12.6
14.0
15.4
16.8
18.9
21.0
23.1
25.2
27.3
30.1
32.9
35.7
39.2
43.4
47.6
52.2
BZV55
BZV55
BZV55
BZV55
BZV55
BZV55
BZV55
BZV55
BZV55
BZV55
BZV55
BZV55
BZV55
BZV55
BZV55
BZV55
BZV55
BZV55
BZV55
BZV55
BZV55
BZV55
BZV55
BZV55
BZV55
BZV55
BZV55
BZV55
BZV55
BZV55
BZV55
BZV55
BZV55
BZV55
BZV55
C2V4
C2V7
C3V0
C3V3
C3V6
C3V9
C4V3
C4V7
C5V1
C5V6
C6V2
C6V8
C7V5
C8V2
C9V1
C10
C11
C12
C13
C15
C16
C18
C20
C22
C24
C27
C30
C33
C36
C39
C43
C47
C51
C56
C62
2.2
2.5
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28.0
31.0
34.0
37.0
40.0
44.0
48.0
52.0
58.0
64.0
70.0
2.6
2.9
3.2
3.5
3.8
4.1
4.6
5.0
5.4
6.0
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32.0
35.0
38.0
41.0
46.0
50.0
54.0
60.0
66.0
72.0
79.0
MILLIMETERS
INCHES
DIM MIN MAX MIN MAX
D
1.60
1.70 0.063 0.067
F
0.41
0.55 0.016 0.022
G
3.30
3.70 .130 .146
G1
2.54 REF.
.100 REF.
S
0.03 MIN.
.001 MIN.
DESIGN DATA
CASE:
DO-213AA, Hermetically sealed
glass case. (MELF, SOD-80, LL34)
LEAD FINISH:
Tin / Lead
THERMAL RESISTANCE: (R
OJEC):
100 ÞC/W maximum at L = 0 inch
THERMAL IMPEDANCE: (Z
OJX): 35
ÞC/W maximum
POLARITY:
Diode to be operated with
the banded (cathode) end positive.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) Of this Device is Approximately
+6PPM/°C. The COE of the Mounting
Surface System Should Be Selected To
Provide A Suitable Match With This
Device.
BZV55 C68
BZV55 C75
NOTE 1
Nominal Zener voltage is measured with the device junction in thermal
equilibrium at an ambient temperature of 25°C + 3°C.
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841
PHONE (978) 620-2600
FAX (978) 689-0803
WEBSITE: http://www.microsemi.com
165
Embedded System
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