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BUK7Y25-40B115

Description
Multilayer Ceramic Capacitors MLCC - SMD/SMT 6.3volts 100uF 20% X5R
Categorysemiconductor    Discrete semiconductor   
File Size745KB,14 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BUK7Y25-40B115 Overview

Multilayer Ceramic Capacitors MLCC - SMD/SMT 6.3volts 100uF 20% X5R

BUK7Y25-40B115 Parametric

Parameter NameAttribute value
Product CategoryMOSFET
ManufacturerNXP
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseLFPAK56-5
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage40 V
Id - Continuous Drain Current35.3 A
Rds On - Drain-Source Resistance25 mOhms
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge5.12 nC
ConfigurationSingle
PackagingCut Tape
PackagingMouseReel
PackagingReel
Fall Time10 ns
Pd - Power Dissipation59.4 W
Rise Time53 ns
Factory Pack Quantity1500
Transistor Type1 N-Channel
BUK7Y25-40B
N-channel TrenchMOS standard level FET
Rev. 04 — 7 April 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology.
This product has been designed and qualified to the appropriate AEC standard for use
in automotive critical applications.
1.2 Features and benefits
Q101 compliant
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
Conditions
T
j
25 °C; T
j
175 °C
V
GS
= 10 V; T
mb
= 25 °C;
see
Figure 1;
see
Figure 4
T
mb
= 25 °C; see
Figure 2
Min
-
-
-
Typ
-
-
-
Max Unit
40
V
35.3 A
59.4 W
Static characteristics
R
DSon
V
GS
= 10 V; I
D
= 20 A;
T
j
= 25 °C; see
Figure 12;
see
Figure 13
-
20
25
mΩ
Avalanche ruggedness
E
DS(AL)S
non-repetitive
I
D
= 35.3 A; V
sup
40 V;
drain-source
R
GS
= 50
Ω;
V
GS
= 10 V;
avalanche energy T
j(init)
= 25 °C; unclamped
gate-drain charge I
D
= 20 A; V
DS
= 32 V;
V
GS
= 10 V; see
Figure 14
-
-
37
mJ
Dynamic characteristics
Q
GD
-
5.12 -
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