BSZ0902NSI
OptiMOS
Features
TM
Power-MOSFET
Product Summary
V
DS
R
DS(on),max
I
D
Q
OSS
Q
G
(0V..10V)
30
2.8
40
17
24
V
mW
A
nC
nC
• Optimized SyncFET for high performance buck converter
• Integrated monolithic Schottky-like diode
• Very low on-resistance
R
DS(on)
@
V
GS
=4.5 V
• 100% avalanche tested
• Superior thermal resistance
• N-channel
• Qualified according to JEDEC
1)
for target applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
PG-TSDSON-8 (fused leads)
Type
BSZ0902NSI
Package
PG-TSDSON-8 (fused leads)
Marking
0902NSI
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
V
GS
=10 V,
T
C
=25 °C
V
GS
=10 V,
T
C
=100 °C
V
GS
=4.5 V,
T
C
=25 °C
V
GS
=4.5 V,
T
C
=100 °C
V
GS
=10 V,
T
A
=25 °C,
R
thJA
=60 K/W
2)
Pulsed drain current
3)
Avalanche current, single pulse
4)
Avalanche energy, single pulse
Gate source voltage
1)
2)
Value
40
40
40
40
Unit
A
21
160
20
30
±20
mJ
V
I
D,pulse
I
AS
E
AS
V
GS
T
C
=25 °C
T
C
=25 °C
I
D
=20 A,
R
GS
=25
W
J-STD20 and JESD22
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.1
page 1
2013-05-13
BSZ0902NSI
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Power dissipation
Symbol Conditions
P
tot
T
C
=25 °C
T
A
=25 °C,
R
thJA
=50 K/W
2)
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
T
j
,
T
stg
Value
48
2.5
-55 ... 150
55/150/56
°C
Unit
W
Parameter
Symbol Conditions
min.
Values
typ.
max.
Unit
Thermal characteristics
Thermal resistance, junction - case
R
thJC
top
Device on PCB
R
thJA
6 cm
2
cooling area
2)
-
-
-
-
-
-
2.6
20
50
K/W
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Breakdown voltage temperature
coefficient
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSS
V
GS
=0 V,
I
D
=10 mA
dV
(BR)DSS
I
D
=10 mA, referenced
/dT
j
to 25 °C
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
=250µA
V
DS
=24 V,
V
GS
=0 V
V
DS
=24 V,
V
GS
=0 V,
T
j
=125 °C
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=20 V,
V
DS
=0 V
V
GS
=4.5 V,
I
D
=30 A
V
GS
=10 V,
I
D
=30 A
Gate resistance
Transconductance
3)
30
-
1.2
-
-
-
-
-
0.5
-
15
-
-
2
10
3.0
2.3
0.9
100
-
-
2
0.5
-
100
3.7
2.8
1.8
-
V
mV/K
V
mA
nA
mW
R
G
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=30 A
W
S
50
See figure 3 for more detailed information
Rev. 2.1
page 2
2013-05-13
BSZ0902NSI
Parameter
Symbol Conditions
min.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
5)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total
Q
gs
Q
g(th)
Q
gd
Q
sw
Q
g
V
plateau
Q
g
V
DD
=15 V,
I
D
=30 A,
V
GS
=0 to 10 V
V
DS
=0.1 V,
V
GS
=0 to 4.5 V
V
DD
=15 V,
V
GS
=0 V
V
DD
=15 V,
I
D
=30 A,
V
GS
=0 to 4.5 V
-
-
-
-
-
-
-
4.0
2.4
4.0
5.6
12.2
2.6
24
5.3
-
5.2
-
16
-
32
V
nC
nC
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=15 V,
V
GS
=10 V,
I
D
=30 A,
R
G,ext
=1.6
W
V
GS
=0 V,
V
DS
=15 V,
f
=1 MHz
-
-
-
-
-
-
-
1500
630
88
3.9
5.4
20
3.8
1995
838
-
-
-
-
-
ns
pF
Values
typ.
max.
Unit
Gate charge total, sync. FET
Output charge
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
Q
g(sync)
Q
oss
-
-
9.8
17
-
23
I
S
I
S,pulse
V
SD
-
T
C
=25 °C
-
V
GS
=0 V,
I
F
=4 A,
T
j
=25 °C
V
R
=15 V,
I
F
=4 A,
di
F
/dt =400 A/µs
-
-
-
0.54
40
160
0.7
A
V
Reverse recovery charge
4)
5)
Q
rr
-
5
-
nC
See figure 13 for more detailed information
See figure 16 for gate charge parameter definition
Rev. 2.1
page 3
2013-05-13
BSZ0902NSI
1 Power dissipation
P
tot
=f(T
C
)
2 Drain current
I
D
=f(T
C
);
V
GS
≥10 V
60
50
50
40
40
30
P
tot
[W]
30
I
D
[A]
20
10
0
0
40
80
120
160
0
40
80
120
160
20
10
0
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
10
3
limited by on-state
resistance
1 µs
4 Max. transient thermal impedance
Z
thJC
=f(t
p
)
parameter:
D
=t
p
/T
10
1
10
2
10 µs
0.5
10
0
I
D
[A]
1 ms
10
1
10 ms
DC
Z
thJC
[K/W]
100 µs
0.2
0.1
0.05
10
-1
10
0
0.02
0.01
single pulse
10
-1
10
-1
10
0
10
1
10
2
10
-2
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
Rev. 2.1
page 4
2013-05-13
BSZ0902NSI
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
V
GS
160
10 V 5 V
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
);
T
j
=25 °C
parameter:
V
GS
6
140
5
120
4.5 V
3.2 V
3.2 V
4
R
DS(on)
[mW]
100
3.5 V
4V
I
D
[A]
80
3V
3
4.5 V
5V
7V
8V
10 V
60
2
2.8 V
40
1
20
0
0
1
2
3
0
0
10
20
30
40
50
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
parameter:
T
j
160
8 Typ. forward transconductance
g
fs
=f(I
D
);
T
j
=25 °C
240
140
200
120
160
100
80
g
fs
[S]
150 °C
25 °C
I
D
[A]
120
60
80
40
40
20
0
0
1
2
3
4
5
0
0
40
80
120
160
V
GS
[V]
I
D
[A]
Rev. 2.1
page 5
2013-05-13
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