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IRFBC30ASPBF

Description
IMUs - Inertial Measurement Units 6-Axis 950uA
CategoryDiscrete semiconductor    The transistor   
File Size275KB,12 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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IRFBC30ASPBF Overview

IMUs - Inertial Measurement Units 6-Axis 950uA

IRFBC30ASPBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Codenot_compliant
Factory Lead Time6 weeks
Avalanche Energy Efficiency Rating (Eas)290 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage600 V
Maximum drain current (Abs) (ID)3.6 A
Maximum drain current (ID)3.6 A
Maximum drain-source on-resistance2.2 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)74 W
Maximum pulsed drain current (IDM)14 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
()
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
23
5.4
11
Single
D
FEATURES
600
2.2
I
2
PAK (TO-262)
D
2
PAK (TO-263)
Halogen-free According to IEC 61249-2-21
Definition
• Low Gate Charge Q
g
Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Effective C
oss
Specified
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
G
D
S
S
N-Channel MOSFET
G
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
TYPICAL SMPS TOPOLOGIES
• Single Transistor Flyback
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note
a. See device orientation.
D
2
PAK (TO-263)
SiHFBC30AS-GE3
IRFBC30ASPbF
SiHFBC30AS-E3
D
2
PAK (TO-263)
SiHFBC30ASTRL-GE3
a
IRFBC30ASTRLPbF
a
SiHFBC30ASTL-E3
a
D
2
PAK (TO-263)
SiHFBC30ASTRR-GE3
a
IRFBC30ASTRRPbF
a
SiHFBC30ASTR-E3
a
I
2
PAK (TO-262)
SiHFBC30AL-GE3
IRFBC30ALPbF
SiHFBC30AL-E3
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a, e
Linear Derating Factor
Single Pulse Avalanche Energy
b
Avalanche Current
a
Repetiitive Avalanche
Energy
a
T
C
= 25 °C
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c, e
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
J
= 25 °C, L = 46 mH, R
g
= 25
,
I
AS
= 3.6 A (see fig. 12).
c. I
SD
3.6 A, dI/dt
170 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
e. Uses IRFBC30A/SiHFBC30A data and test conditions.
E
AS
I
AR
E
AR
P
D
dV/dt
T
J
, T
stg
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
600
± 30
3.6
2.3
14
0.69
290
3.6
7.4
74
7.0
- 55 to + 150
300
d
W/°C
mJ
A
mJ
W
V/ns
°C
A
UNIT
V
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91109
S11-1052-Rev. C, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

IRFBC30ASPBF Related Products

IRFBC30ASPBF IRFBC30ALPBF
Description IMUs - Inertial Measurement Units 6-Axis 950uA Switching Voltage Regulators
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
package instruction SMALL OUTLINE, R-PSSO-G2 IN-LINE, R-PSIP-T3
Contacts 3 3
Reach Compliance Code not_compliant compliant
Factory Lead Time 6 weeks 6 weeks
Avalanche Energy Efficiency Rating (Eas) 290 mJ 290 mJ
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 600 V 600 V
Maximum drain current (Abs) (ID) 3.6 A 3.6 A
Maximum drain current (ID) 3.6 A 3.6 A
Maximum drain-source on-resistance 2.2 Ω 2.2 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSSO-G2 R-PSIP-T3
JESD-609 code e3 e3
Number of components 1 1
Number of terminals 2 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE IN-LINE
Peak Reflow Temperature (Celsius) 260 NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 74 W 74 W
Maximum pulsed drain current (IDM) 14 A 14 A
Certification status Not Qualified Not Qualified
surface mount YES NO
Terminal surface Matte Tin (Sn) Matte Tin (Sn)
Terminal form GULL WING THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature 30 40
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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