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IRF630NSPBF

Description
Multilayer Ceramic Capacitors MLCC - SMD/SMT 50V 1uF X7R 0805 10%
CategoryDiscrete semiconductor    The transistor   
File Size333KB,11 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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IRF630NSPBF Overview

Multilayer Ceramic Capacitors MLCC - SMD/SMT 50V 1uF X7R 0805 10%

IRF630NSPBF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionLEAD FREE, PLASTIC, D2PAK-3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresAVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Efficiency Rating (Eas)94 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage200 V
Maximum drain current (Abs) (ID)9.3 A
Maximum drain current (ID)9.3 A
Maximum drain-source on-resistance0.3 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)82 W
Maximum pulsed drain current (IDM)37 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn) - with Nickel (Ni) barrier
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
PD - 95047A
Advanced Process Technology
l
Dynamic dv/dt Rating
l
175°C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
l
Ease of Paralleling
l
Simple Drive Requirements
l
Lead-Free
Description
l
IRF630NPbF
IRF630NSPbF
IRF630NLPbF
HEXFET
®
Power MOSFET
D
V
DSS
= 200V
R
DS(on)
= 0.30Ω
G
S
Fifth Generation HEXFET
®
Power MOSFETs from
International Rectifier utilize advanced processing techniques
to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation levels
to approximately 50 watts. The low thermal resistance and
low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
2
Pak is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0W in a typical surface mount application.
The through-hole version (IRF630NL) is available for low-
profile application.
I
D
= 9.3A
TO-220AB
IRF630NPbF
D
2
Pak
IRF630NSPbF
TO-262
IRF630NLPbF
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current

Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
‚
Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt
†
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
„
Max.
9.3
6.5
37
82
0.5
±20
94
9.3
8.2
8.1
-55 to +175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
www.irf.com
1
07/23/10
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