The Si9711 is a monolithic switch designed to meet the
needs of the PC Card interface. The inputs are fully CMOS
compatible and incorporate all the level shift and interface
required to be driven by any CMOS driver. The external
inputs can be driven to 3.3 V or 5 V by setting V
L
at the
appropriate level. The switches are low R
ON
and can carry
the maximum currents found on the PC Card interface.
The 5 V and 3.3 V switches do not have the parasitic diode
found in vertical DMOS power switches.
Low R
ON
is achieved by using MOSFETs driven off the
+ 12 V
IN
input. All level shifting is built into the Si9711.
The Si9711 is packaged in an SO-16 package and is rated
over the commercial temperature range 0 to 70 °C.
The Si9711 is available in both standard and lead (Pb)-free
packages.
FEATURES
•
•
•
•
•
•
•
Single SO-16 Package
CMOS Inputs with Hysteresis
Extremely Low R
ON
Reverse Blocking Switches
HiZ Outputs in the Off-State
Low Power Consumption
Safe Power-Up
FUNCTIONAL BLOCK DIAGRAM
+ 12 V
IN
(13)
S
1
S
2
S
3
S
4
(4)
(5)
V
PP
V
PP
V
CC
V
CC
V
CC
V
CC
+ 5 V
IN
(11)
(6)
(7)
+ 3.3 V
IN
+ 3.3 V
IN
(9)
(10)
(8)
(12)
V
L
S
1
S
2
(14)
(15)
(16)
Level Shift
and
Drivers
(2)
(1)
(3)
S
4
S
3
GND
TRUTH TABLE - S
1
THROUGH S
4
Logic
0
1
Switch
OFF
ON
Document Number: 70022
S-40745-Rev. G, 19-Apr-04
www.vishay.com
1
Si9711
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltages Referenced to Ground
V
L
+ 12 V
IN
+ 5 V
IN
+ 3.3 V
IN
S
1
through S
4
(CMOS Inputs)
I
OUT
V
PP
V
CC
V
PP
All Pins
I
OUT
V
CC
PD Max:
Junction Temperature
Thermal Ratings R
ΘJA
Product is End of Life 3/2014
Limit
7
15
7
7
V
L
+ 0.5
300
7
15
- 0.5
1.5
(T
A
= 25 °C)
(T
A
= 70 °C)
710
390
125
140
Unit
V
mA
V
A
mW
°C
°C/W
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
Parameter
+ 12 V
IN
+ 5 V
IN
(must be present)
+ 3.3 V
IN
I
OUT
V
CC
I
OUT
V
PP
V
L
Limit
12 V ± 10 %
5 V ± 10 %
3.3 V ± 10 %
1
150
5.0 V ± 10 %
A
mA
V
V
Unit
SPECIFICATIONS
Parameter
Switch 1
On Resistance
Off Current (+ 12 V
IN
to V
PP
)
Switching Time
Switch 2
On Resistance
Off Current
Switching Time
R
ON
I
OFF
t
S2(on)
t
S2(off)
I = 120 mA, + 12 V
IN
= 10.8 V
S
2
= S
3
= V
L
V
PP
= 13.2 V, V
CC
= 0 V
+ 12 V
IN
= 13.2 V
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
0.1
0.5
300
350
1
10
1
4
mΩ
µA
µs
R
ON
I
OFF
t
S1(on)
t
S1(off)
I = 120 mA, + 12 V
IN
= 10.8 V
S
1
= V
L
, S
2
= GND
+ 12 V
IN
= 13.2 V, V
PP
= 0 V
S
1
= GND
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
0.1
0.5
200
250
1
10
1
4
mΩ
µA
µs
Symbol
Test Conditions
Unless Otherwise Specified
+ 5 V
IN
= 5 V, + 3.3 V
IN
= 3.3 V
+ 12 V
IN
= 12 V, V
L
= 5.0 V, GND = 0 V
Limits
C Suffix, 0 to 70 °C
Min
a
Unit
Typ
Max
a
C
L
= 0 1 µF, S
2
= Low, R
L
= 100
Ω,
See Figure 1
C
L
= 0.1 µF, R
L
= 100
Ω,
S
1
= S
4
= GND,
S
3
= V
L
, See Figure 1
www.vishay.com
2
Document Number: 70022
S-40745-Rev. G, 19-Apr-04
Product is End of Life 3/2014
Si9711
Vishay Siliconix
SPECIFICATIONS
Parameter
Switch 3
On Resistance
Off Current
R
ON
I
OFF
t
d(on)
Switching Time
Switch 4
On Resistance
Off Current
R
ON
I
OFF
t
d(on)
Switching Time
Power Supply
+ 12 V
IN
Current
V
L
Current
Switch Control Inputs
Input Voltage High
Input Voltage Low
Input Hysteresis
b
Input Current High
Input Current Low
V
I(H)
V
I(L)
V
I(H)
- V
I(L)
I
I(H)
I
I(L)
V
L
= 3.3 V
V
L
= 5 V
V
L
= 3.3 V
V
L
= 5 V
V
L
= 3.3 V
V
L
= 5 V
S
1
through S
4
= V
L
, V
L
= 5 V
S
1
through S
4
= GND, V
L
= 5 V
- 1.0
0.5
0.8
2.8
4.0
2.4
3.3
1.1
1.5
1.3
1.8
1.0
µA
0.4
0.8
V
I
+12VIN(1)
I
+12VIN(2)
I
VL(1)
I
VL(2)
S
1
= S
4
= GND, S
2
= S
3
= V
L
S
1
= S
4
= V
L
, S
2
= S
3
= GND
S
1
= S
4
= GND, S
2
= S
3
= V
L
S
1
= S
4
= V
L
, S
2
= S
3
= GND
10
10
10
10
µA
t
ramp(on)
t
S4(off)
I = 500 mA, + 12 V
IN
= 10.8 V
S
4
= V
L
+ 3.3 V
IN
= 3.6 V, V
CC
= 0 V
S
2
= S
3
= S
4
= GND
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
1
200
0.5
4
µs
150
185
1
10
mΩ
µA
t
ramp(on)
t
S3(off)
I = 500 mA, + 12 V
IN
= 10.8 V
S
3
= V
L
+ 5 V
IN
= 5 V, V
CC
= 0 V
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
1
+ 5 V
IN
= 5 V, C
L
= 0.1 µF, V
CC
to GND
R
L
= 100
Ω,
V
CC
to GND, See Figure 2
200
0.5
4
µs
200
250
1
10
mΩ
µA
Symbol
Test Conditions
Unless Otherwise Specified
+ 5 V
IN
= 5 V, + 3.3 V
IN
= 3.3 V
+ 12 V
IN
= 12 V, V
L
= 5.0 V, GND = 0 V
Limits
C Suffix, 0 to 70 °C
Min
a
Unit
Typ
Max
a
+ 3.3 V
IN
= 3.3 V, C
L
= 0.1 µF, S
3
= GND
R
L
= 100
Ω,
See Figure 2
Notes:
a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
b. Guaranteed by design, not subject to production testing.
Document Number: 70022
S-40745-Rev. G, 19-Apr-04
www.vishay.com
3
Si9711
Vishay Siliconix
TIMING WAVEFORMS
V
PP
R
L
C
L
Product is End of Life 3/2014
V
CC
R
L
C
L
V
L
S
1
or S
2
GND
V
PP
90 %
GND
t
d(on)
t
SX(on)
t
SX(off)
t
d(on)
10 %
90 %
GND
50 %
50 %
S
3
or S
4
GND
V
L
50 %
V
CC
90 %
10 %
t
SX(off)
90 %
50 %
t
ramp(on)
Figure 1. t
d(on)
and t
SX(on)
Figure 2. t
ramp(on)
PIN CONFIGURATION AND ORDERING INFORMATION
SOIC-16
S
3
S
4
GND
V
PP
V
PP
V
CC
V
CC
V
CC
1
2
3
4
5
6
7
8
Top View
16
15
14
13
12
11
10
9
S
2
S
1
V
L
+ 12 V
IN
V
CC
+ 5 V
IN
+ 3.3 V
IN
+ 3.3 V
IN
ORDERING INFORMATION
Part Number
Si9711CY
Si9711CY-T1
Si9711CY-T1-E3
0 to 70 °C
SOIC-16
Temperature Range
Package
Pin Number
1
2
3
4, 5
6, 7, 8, 12
9, 10
11
13
14
15
16
Symbol
S
3
S
4
GND
V
PP
V
CC
+ 3.3 V
IN
+ 5 V
IN
+ 12 V
IN
V
L
S
1
S
2
Description
Control input for selecting + 5 V
IN
to V
CC
. The PC Card terminology for this pin is V
CC
_EN
1
.
Control input for selecting + 3.3 V
IN
to V
CC
. The PC Card terminology for this pin is V
CC
_EN
0
.
Ground connection.
Program and peripheral voltage to PC Card slot.
Supply voltage to slot.
+ 3.3 V supply.
+5 V supply.
+ 12 V supply.
Rail voltage for switch control inputs, selectable to 5 V or 3.3 V.
Based on the research of Linux kernel and Linux application environment, the method of operating system module decomposition and improvement is adopted to realize the embedded Linux operating system t...
msp430fr5969 has 16 ADC channels, 8 of which are external and 8 are internal. This test takes A1 channel as an example, corresponding to p1.1 (S1 button) of lauchpad, enables the internal pull-up regi...
We often find that some of the rules or principles we take for granted are often wrong. Electronic engineers also encounter such examples in circuit design. Let's take a look at the eight misunderstan...
I am a beginner, and my platform cannot use the SHBrowseForFolder() method. I want to find another method to replace SHBrowseForFolder to achieve the same effect, or I can save the file directly to th...
1. Project Overview
1.1 Introduction
Currently, most music files are saved in MP3 format, a lossy audio compression format that cannot perfectly reproduce the original music. With the exp...[Details]
Some time ago, I attended the 4th Energy Chemistry Forum of the Chinese Chemical Society and learned about high-energy-density and high-safety batteries. I would like to summarize and share this wi...[Details]
In recent years, with the application of the IEC61850 standard and the development and deployment of optoelectronic transformers, the concept of digital substations has been put into practical use ...[Details]
For healthcare professionals, accurate diagnosis and treatment are crucial for a clear picture of a person's health. However, healthcare professionals often rely on tests at medical facilities, cli...[Details]
Gross profit margin jumped from 13.6% in the first half of last year to 25.9%, almost doubling year-on-year.
On August 21, RoboSense released its interim performance report, in which the...[Details]
On August 22, South Korean media Nate reported on the 20th local time that Samsung Electronics is introducing Hyper Cell technology into its most advanced 2nm process technology, striving to improv...[Details]
Through AI connection technology supported by Qualcomm X85 5G modem and RF and Qualcomm FastConnect 7900 mobile connection system, seamless switching can be achieved between cellular net...[Details]
PowiGaN achieves 95% efficiency at both light and full loads, meeting critical operational and safety requirements.
DARWIN, Australia and SAN JOSE, Calif.,
August 22, 2025 – Powe...[Details]
Chinese characters are extensive and profound, and there are many different names for ESD tubes. How many of them do you know?
As far as I know, ESD diodes are currently known as ESD p...[Details]
Shenzhen Baowei Power Supply high frequency pure sine wave power, communication inverter power supply has two communication interfaces, RS232 and R485 interfaces, their functions and characteristic...[Details]
Lithium-ion batteries are a key component of electric vehicles. Their high energy density enables them to store a large amount of energy in a relatively compact and lightweight package, which is cr...[Details]
This article uses the Allwinner T507 quad-core automotive-grade processor as the development board. This article explains how to configure Ethernet for the T507 development board. Other boards may ...[Details]
• Standard message
1: Speed control
• Standard Telegram
2: Speed Control
• Standard Telegram
3: Speed/Position Control (used when the 1200 is configured as a TO)
...[Details]
The basic structure of the power grid dispatching automation system includes three parts: control center, master station system, plant terminal (RTU) and information channel. According to the diffe...[Details]
Silicon carbide (SiC) power switching devices are becoming a popular choice for industrial battery applications due to their ability to achieve faster switching speeds and superior low-loss operati...[Details]
Embedded System
京公网安备 11010802033920号
EEWORLD
