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BZX85B2V7-TR

Description
MOSFET P-Ch LL FET Enhancement Mode
Categorysemiconductor    Discrete semiconductor   
File Size103KB,6 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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MOSFET P-Ch LL FET Enhancement Mode

BZX85B2V7-TR Parametric

Parameter NameAttribute value
Product CategoryZener Diodes
ManufacturerVishay
RoHSDetails
Vz - Zener Voltage2.7 V
Mounting StyleThrough Hole
Package / CaseDO-41
Pd - Power Dissipation1.3 W
Voltage Tolerance2 %
Voltage Temperature Coefficient- 0.065 %/C
Zener Current360 mA
Zz - Zener Impedance20 Ohms
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
ConfigurationSingle
Test Current80 mA
PackagingCut Tape
PackagingReel
Height2.6 mm
Ir - Reverse Current150 uA
Length4.1 mm
Factory Pack Quantity5000
Termination StyleAxial
TypeVoltage Regulator
Width2.6 mm
Unit Weight0.010935 oz
BZX85-Series
www.vishay.com
Vishay Semiconductors
Zener Diodes
FEATURES
• Silicon planar power Zener diodes
• For use in stabilizing and clipping circuits with
high power rating
• The Zener voltages are graded according to the
international E 24 standard. Replace suffix “C”
with “B” for ± 2 % tolerance
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
PARAMETER
V
Z
range nom.
Test current I
ZT
V
Z
specification
Int. construction
VALUE
2.7 to 100
2.7 to 80
Pulse current
Single
UNIT
V
mA
APPLICATIONS
• Voltage stabilization
ORDERING INFORMATION
DEVICE NAME
BZX85-series
BZX85-series
ORDERING CODE
BZX85-series-TR
BZX85-series-TAP
TAPED UNITS PER REEL
5000 (52 mm tape on 13" reel)
5000 per ammopack
(52 mm tape)
MINIMUM ORDER
QUANTITY
25 000/box
25 000/box
PACKAGE
PACKAGE NAME
DO-41
WEIGHT
310 mg
MOLDING COMPOUND
FLAMMABILITY RATING
UL 94 V-0
MOISTURE SENSITIVITY
LEVEL
MSL level 1
(according J-STD-020)
SOLDERING CONDITIONS
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Power dissipation
Zener current
Junction to ambient air
Junction temperature
Storage temperature range
TEST CONDITION
Valid provided that leads at a distance of 4 mm
from case are kept at ambient temperature
See Table “Electrical characteristics”
Valid provided that leads at a distance of 4 mm
from case are kept at ambient temperature
R
thJA
T
j
T
stg
110
175
-55 to +175
K/W
°C
°C
SYMBOL
P
tot
VALUE
1300
UNIT
mW
Rev. 2.2, 02-Jun-14
Document Number: 85607
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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