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MPSH10

Description
Bipolar Transistors - BJT 25V VHF/UHF NPN
CategoryDiscrete semiconductor    The transistor   
File Size79KB,3 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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MPSH10 Overview

Bipolar Transistors - BJT 25V VHF/UHF NPN

MPSH10 Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Contains lead
MakerON Semiconductor
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Manufacturer packaging code29-11
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time1 week
Maximum collector current (IC)0.1 A
Collector-based maximum capacity0.7 pF
Collector-emitter maximum voltage25 V
ConfigurationSINGLE
Minimum DC current gain (hFE)60
highest frequency bandULTRA HIGH FREQUENCY BAND
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)240
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.35 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)650 MHz
MPSH10
Preferred Device
VHF/UHF Transistors
NPN Silicon
Features
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Collector
−Emitter
Voltage
Collector
−Base
Voltage
Emitter
−Base
Voltage
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
P
D
P
D
T
J
, T
stg
Value
25
30
3.0
350
2.8
1.0
8.0
−55
to +150
Unit
Vdc
Vdc
Vdc
W
mW/°C
W
mW/°C
°C
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Symbol
R
qJA
R
qJC
Max
200357
125
Unit
°C/W
°C/W
1
2
3
TO−92
CASE 29−11
STYLE 2
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MARKING DIAGRAM
MPS
H10
AYWW
G
G
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2007
February, 2007
Rev. 3
1
Publication Order Number:
MPSH10/D

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Index Files: 1216  887  1983  2314  2797  25  18  40  47  57 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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