Important notice
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DISCRETE SEMICONDUCTORS
DATA SHEET
BC856; BC857; BC858
PNP general purpose transistors
Product data sheet
Supersedes data of 2003 Apr 09
2004 Jan 16
NXP Semiconductors
Product data sheet
PNP general purpose transistors
FEATURES
•
Low current (max. 100 mA)
•
Low voltage (max. 65 V).
APPLICATIONS
•
General purpose switching and amplification.
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complements: BC846, BC847 and BC848.
MARKING
TYPE NUMBER
BC856
BC856A
BC856B
BC857
BC857A
BC857B
BC857C
BC858B
Note
1. * = p: made in Hong Kong.
* = t: made in Malaysia.
* = W: made in China.
ORDERING INFORMATION
TYPE
NUMBER
BC856
BC857
BC858
PACKAGE
NAME
−
−
−
DESCRIPTION
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
MARKING CODE
(1)
3D*
3A*
3B*
3H*
3E*
3F*
3G*
3K*
Top view
handbook, halfpage
BC856; BC857; BC858
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
3
3
1
2
1
2
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
VERSION
SOT23
SOT23
SOT23
2004 Jan 16
2
NXP Semiconductors
Product data sheet
PNP general purpose transistors
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
V
CBO
BC856
BC857
BC858
V
CEO
collector-emitter voltage
BC856
BC857
BC858
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board, standard footprint.
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
Note
1. Transistor mounted on an FR4 printed-circuit board, standard footprint.
PARAMETER
thermal resistance from junction to
ambient
CONDITIONS
in free air; note 1
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
open collector
open base
PARAMETER
collector-base voltage
CONDITIONS
open emitter
BC856; BC857; BC858
MIN.
−
−
−
−
−
−
−
−
−
−
−
−65
−
−65
MAX.
−80
−50
−30
−65
−45
−30
−5
−100
−200
−200
250
+150
150
+150
V
V
V
V
V
V
V
UNIT
mA
mA
mA
mW
°C
°C
°C
TYPICAL
500
UNIT
K/W
2004 Jan 16
3
NXP Semiconductors
Product data sheet
PNP general purpose transistors
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
PARAMETER
collector-base cut-off current
CONDITIONS
V
CB
=
−30
V; I
E
= 0
V
CB
=
−30
V; I
E
= 0;
T
j
= 150
°C
I
EBO
h
FE
emitter-base cut-off current
DC current gain
BC856
BC857
BC856A; BC857A
BC856B; BC857B; BC858B
BC857C
V
CEsat
collector-emitter saturation voltage
V
EB
=
−5
V; I
C
= 0
I
C
=
−2
mA; V
CE
=
−5
V
BC856; BC857; BC858
MIN.
−
−
−
125
125
125
220
420
TYP.
−1
−
−
−
−
−
−
−
−75
−250
−700
−850
−650
−
4.5
−
2
MAX.
−15
−4
−100
475
800
250
475
800
−300
−650
−
−
−750
−820
−
−
10
UNIT
nA
μA
nA
I
C
=
−10
mA; I
B
=
−0.5
mA
−
I
C
=
−100
mA; I
B
=
−5
mA;
−
note 1
mV
mV
mV
mV
mV
mV
pF
MHz
dB
V
BEsat
base-emitter saturation voltage
I
C
=
−10
mA; I
B
=
−0.5
mA
−
I
C
=
−100
mA; I
B
=
−5
mA;
−
note 1
V
BE
C
c
f
T
F
base-emitter voltage
collector capacitance
transition frequency
noise figure
I
C
=
−2
mA; V
CE
=
−5
V
I
C
=
−10
mA; V
CE
=
−5
V
V
CB
=
−10
V; I
E
= I
e
= 0;
f = 1 MHz
V
CE
=
−5
V; I
C
=
−10
mA;
f = 100 MHz
I
C
=
−200 μA;
V
CE
=
−5
V;
R
S
= 2 kΩ; f = 1 kHz;
B = 200 Hz
−600
−
−
100
−
Note
1. Pulse test: t
p
≤
300
μs; δ ≤
0.02.
2004 Jan 16
4
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