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F1T4G

Description
Rectifiers 1.0 Amp 400 Volt 150ns
CategoryDiscrete semiconductor    diode   
File Size368KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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F1T4G Overview

Rectifiers 1.0 Amp 400 Volt 150ns

F1T4G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
package instructionGREEN, PLASTIC, TS-1, 2 PIN
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresHIGH RELIABILITY, LOW POWER LOSS
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
JESD-30 codeO-PALF-W2
Humidity sensitivity level1
Maximum non-repetitive peak forward current30 A
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage400 V
Maximum reverse recovery time0.15 µs
surface mountNO
Terminal surfacePure Tin (Sn)
Terminal formWIRE
Terminal locationAXIAL
F1T1G thru F1T7G
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Glass passivated chip junction
- High efficiency, Low VF
- High current capability
- High reliability
- High surge current capability
- Low power loss
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Glass Passivated Fast Recovery Rectifiers
MECHANICAL DATA
Case:
TS-1
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Weight:
0.2g (approximately)
TS-1
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@1A
Maximum reverse current @ rated VR
T
J
=25
T
J
=125
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
Trr
Cj
R
θJA
T
J
T
STG
150
15
90
- 55 to +150
- 55 to +150
O
F1T
1G
50
35
50
F1T
2G
100
70
100
F1T
3G
200
140
200
F1T
4G
400
280
400
1
30
1.3
5
150
F1T
5G
600
420
600
F1T
6G
800
560
800
F1T
7G
1000
700
1000
UNIT
V
V
V
A
A
V
μA
Maximum reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
250
500
ns
pF
C/W
O
O
C
C
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Document Number: DS_D1505007
Version: G14

F1T4G Related Products

F1T4G F1T1G
Description Rectifiers 1.0 Amp 400 Volt 150ns Rectifiers 1.0 Amp 50 Volt 150ns
Is it Rohs certified? conform to conform to
Maker Taiwan Semiconductor Taiwan Semiconductor
package instruction GREEN, PLASTIC, TS-1, 2 PIN GREEN, PLASTIC, TS-1, 2 PIN
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Other features HIGH RELIABILITY, LOW POWER LOSS HIGH RELIABILITY, LOW POWER LOSS
Shell connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.3 V 1.3 V
JESD-30 code O-PALF-W2 O-PALF-W2
Humidity sensitivity level 1 1
Maximum non-repetitive peak forward current 30 A 30 A
Number of components 1 1
Number of terminals 2 2
Maximum operating temperature 150 °C 150 °C
Minimum operating temperature -65 °C -65 °C
Maximum output current 1 A 1 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND
Package form LONG FORM LONG FORM
Certification status Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 400 V 50 V
Maximum reverse recovery time 0.15 µs 0.15 µs
surface mount NO NO
Terminal surface Pure Tin (Sn) Pure Tin (Sn)
Terminal form WIRE WIRE
Terminal location AXIAL AXIAL
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