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A35

Description
RF Amplifier 10-2000MHz NF 5.0dB Gain 10.0dB
CategoryWireless rf/communication    Radio frequency and microwave   
File Size617KB,3 Pages
ManufacturerMACOM
Websitehttp://www.macom.com
Environmental Compliance
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A35 Overview

RF Amplifier 10-2000MHz NF 5.0dB Gain 10.0dB

A35 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMACOM
Reach Compliance Codecompliant
Other featuresHIGH RELIABILITY
Characteristic impedance50 Ω
structureCOMPONENT
Gain8.5 dB
Maximum input power (CW)13 dBm
Maximum operating frequency2000 MHz
Minimum operating frequency10 MHz
Maximum operating temperature85 °C
Minimum operating temperature-54 °C
RF/Microwave Device TypesWIDE BAND LOW POWER
Maximum voltage standing wave ratio2.2
A35 / SMA35
Cascadable Amplifier
10 to 2000 MHz
Features
MEDIUM OUTPUT LEVEL +9 dBm (TYP.)
WIDE POWER SUPPLY RANGE: +8 TO +20 VOLTS
Rev. V3
Product Image
Description
The A35 RF amplifier is a discrete thin film hybrid design,
which incorporates the use of thin film manufacturing
processes for accurate performance and high reliability.
This single stage bipolar transistor feedback amplifier design
displays impressive performance over a broadband frequency
range. An active DC biasing network is used for
temperature-stable performance, in addition to an RF Choke,
used for power supply decoupling.
Both TO-8 and Surface Mount packages are hermetically sealed,
and MIL-STD-883 environmental screening is available
.
Ordering Information
Part Number
A35
SMA35
CA35 **
Package
TO-8
Surface Mount
SMA Connectorized
** The connectorized version is not RoHs compliant.
Electrical Specifications: Z
0
= 50, V
CC
= +15 V
DC
Parameter
Frequency
Small Signal Gain (min)
Gain Flatness (max)
Reverse Isolation
Noise Figure (max)
Power Output
@ 1 dB comp. (min)
IP3
IP2
Second Order Harmonic IP
VSWR Input / Output (max)
DC Current @ 15 Volts (max)
1
mA
Absolute Maximum Ratings
Parameter
Storage Temperature
Case Temperature
DC Voltage
Continuous Input Power
Short Term Input power
(1 minute max.)
Peak Power (3 µsec max.)
“S” Series Burn-In
Temperature (case)
Units
MHz
dB
dB
dB
dB
dBm
dBm
dBm
dBm
Typical
25ºC
1-2050
10.0
±0.3
16
5.0
9.0
+21
+33
+38
1.5:1 / 1.5:1
24
6.5
7.0
Guaranteed
0º to 50ºC
10-2000
9.0
±0.6
Absolute
Maximum
-62ºC to +125ºC
+125ºC
+21 V
+13 dBm
50 mW
0.5 W
125ºC
-54º to +85ºC*
10-2000
8.5
±0.8
7.0
6.5
Thermal Data: V
CC
= +15 V
DC
Parameter
Thermal Resistance θ
jc
2.0:1 / 2.2:1
27
2.2:1 / 2.2:1
29
Transistor Power Dissipation P
d
Junction Temperature Rise
Above Case T
jc
Rating
169ºC/W
0.189 W
+32ºC
* Over temperature performance limits for part number CA35 guaranteed from 0
o
C to +50
o
C only.
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support

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