Freescale Semiconductor
Technical Data
Document Number: MRFE6S9135H
Rev. 1, 11/2007
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 28 volt base station equipment.
•
Typical Single- Carrier W - CDMA Performance: V
DD
= 28 Volts, I
DQ
=
1000 mA, P
out
= 39 Watts Avg., Full Frequency Band, 3GPP Test Model 1,
64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain — 21 dB
Drain Efficiency — 32.3%
Device Output Signal PAR — 6.4 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — - 39.5 dBc in 3.84 MHz Channel Bandwidth
•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, P
out
= 180 W CW
(3 dB Input Overdrive from Rated P
out
), Designed for Enhanced Ruggedness
Features
•
100% PAR Tested for Guaranteed Output Power Capability
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Qualified Up to a Maximum of 32 V
DD
Operation
•
Integrated ESD Protection
•
Optimized for Doherty Applications
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRFE6S9135HR3
MRFE6S9135HSR3
940 MHz, 39 W AVG., 28 V
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRFE6S9135HR3
CASE 465C - 02, STYLE 1
NI - 880S
MRFE6S9135HSR3
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Value
- 0.5, +66
- 0.5, +12
- 65 to +150
150
225
Unit
Vdc
Vdc
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 136 W CW
Case Temperature 80°C, 39 W CW
Symbol
R
θJC
Value
(2,3)
0.39
0.48
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2007. All rights reserved.
MRFE6S9135HR3 MRFE6S9135HSR3
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
II (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 66 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate- Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 400
μAdc)
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
D
= 1000 mAdc, Measured in Functional Test)
Drain- Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 2.8 Adc)
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Input Capacitance
(V
DS
= 28 Vdc, V
GS
= 0 Vdc
±
30 mV(rms)ac @ 1 MHz)
C
rss
C
oss
C
iss
—
—
—
1.3
410
343
—
—
—
pF
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
1.4
2.2
0.15
2.1
2.9
0.2
2.9
3.7
0.35
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
10
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1000 mA, P
out
= 39 W Avg. W - CDMA, f = 940 MHz,
Single- Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @
±5
MHz Offset.
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain
Drain Efficiency
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
1. Part internally matched both on input and output.
(continued)
G
ps
η
D
PAR
ACPR
IRL
20
30.5
6.1
—
—
21
32.3
6.4
- 39.5
- 15
23
—
—
- 38
-9
dB
%
dB
dBc
dB
MRFE6S9135HR3 MRFE6S9135HSR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
(continued)
Characteristic
Video Bandwidth @ 160 W PEP P
out
where IM3 = - 30 dBc
(Tone Spacing from 100 kHz to VBW)
ΔIMD3
= IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
Gain Flatness in 40 MHz Bandwidth @ P
out
= 39 W Avg.
Average Deviation from Linear Phase in 40 MHz Bandwidth
@ P
out
= 135 W CW
Average Group Delay @ P
out
= 135 W CW, f = 940 MHz
Part - to - Part Insertion Phase Variation @ P
out
= 135 W CW,
f = 940 MHz, Six Sigma Window
Gain Variation over Temperature
( - 30°C to +85°C)
Output Power Variation over Temperature
( - 30°C to +85°C)
Symbol
VBW
—
10
—
Min
Typ
Max
Unit
MHz
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1000 mA, 920 - 960 MHz Bandwidth
G
F
Φ
Delay
ΔΦ
ΔG
ΔP1dB
—
—
—
—
—
—
0.3
1
3.6
19
0.015
0.01
—
—
—
—
—
—
dB
°
ns
°
dB/°C
dBm/°C
MRFE6S9135HR3 MRFE6S9135HSR3
RF Device Data
Freescale Semiconductor
3
B1
V
BIAS
R2
+
C4
C5
+
R3
Z7
C6
R1
Z9
Z10
C8
Z11
C11
Z12
C12
Z13
Z14
C20
C21
C22
C23
C24
V
SUPPLY
RF
OUTPUT
Z15
Z16
C25
Z17
RF
INPUT
Z1
C1
Z2
Z3
Z4
Z5
Z6
C7
C9
C10
C13
C14
C2
C3
DUT
Z8
+
C15
C16
C17
C18
C19
V
SUPPLY
Z1
Z2
Z3
Z4
Z5
Z6
Z7, Z8
Z9
Z10
0.263″ x 0.065″ Microstrip
0.310″ x 0.065″ Microstrip
0.910″ x 0.120″ Microstrip
0.248″ x 1.020″ x 0.120″ Taper
0.363″ x 1.020″ Microstrip
0.057″ x 1.120″ Microstrip
0.823″ x 0.120″ Microstrip
0.060″ x 0.980″ Microstrip
0.149″ x 0.980″ Microstrip
Z11
Z12
Z13
Z14
Z15
Z16
Z17
PCB
0.202″ x 0.980″ x 0.444″ Taper
0.114″ x 0.444″ Microstrip
0.145″ x 0.444″ x 0.110″ Taper
0.180″ x 0.110″ Microstrip
0.585″ x 0.110″ Microstrip
0.443″ x 0.065″ Microstrip
0.274″ x 0.065″ Microstrip
Taconic RF - 35, 0.030″,
ε
r
= 3.5
Figure 1. MRFE6S9135HR3(HSR3) Test Circuit Schematic
Table 5. MRFE6S9135HR3(HSR3) Test Circuit Component Designations and Values
Part
B1
C1, C6, C15, C20, C25
C2, C14
C3
C4
C5, C16, C17, C18, C21,
C22, C23
C7, C8
C9, C10, C11, C12, C13
C19, C24
R1, R3
R2
Short RF Bead
39 pF Chip Capacitors
0.8- 8.0 pF Variable Capacitors, Gigatrim
2.0 pF Chip Capacitor
33
μF,
25 V Electrolytic Capacitor
10
μF,
50 V Chip Capacitors
6.8 pF Chip Capacitors
4.7 pF Chip Capacitors
470
μF,
63 V Electrolytic Capacitors
3.3
Ω,
1/3 W Chip Resistors
2.2 KΩ, 1/4 W Chip Resistor
Description
Part Number
2743019447
ATC100B390JT500XT
27291SL
ATC100B2R0JT500XT
EMVY250ADA330MF55G
GRM55DR61H106KA88B
ATC100B6R8JT500XT
ATC100B4R7JT500XT
EKME630ELL471MK25S
CRCW12103R30FKEA
CRCW12062201FKEA
Manufacturer
Fair- Rite
ATC
Johanson
ATC
Nippon Chemi - Con
Murata
ATC
ATC
United Chemi - Con
Vishay
Vishay
MRFE6S9135HR3 MRFE6S9135HSR3
4
RF Device Data
Freescale Semiconductor
C24
R3
B1
R2
C5
C6
C20
C21 C22
C4
C23
C3
R1
C8
C11 C12
CUT OUT AREA
C9 C10
C13
C7
C18
C14
C25
C1
C2
C15
C16 C17
MRFE6S9135H
Rev. 1
C19
Figure 2. MRFE6S9135HHR3(HSR3) Test Circuit Component Layout
MRFE6S9135HR3 MRFE6S9135HSR3
RF Device Data
Freescale Semiconductor
5
京公网安备 11010802033920号
EEWORLD
