TO
-22
0A
B
BUK7507-30B
N-channel TrenchMOS standard level FET
Rev. 02 — 22 February 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
V
GS
= 10 V; T
mb
= 25 °C;
see
Figure 1;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
V
GS
= 10 V; I
D
= 25 A;
T
j
= 25 °C; see
Figure 11;
see
Figure 12
[1]
Min
-
-
-
-
Typ
-
-
-
5.9
Max Unit
30
75
157
7
V
A
W
mΩ
Static characteristics
Avalanche ruggedness
E
DS(AL)S
non-repetitive
I
D
= 75 A; V
sup
≤
30 V;
drain-source avalanche R
GS
= 50
Ω;
V
GS
= 10 V;
energy
T
j(init)
= 25 °C; unclamped
gate-drain charge
V
GS
= 10 V; I
D
= 25 A;
V
DS
= 24 V; T
j
= 25 °C;
see
Figure 13
-
-
329
mJ
Dynamic characteristics
Q
GD
-
12
-
nC
[1]
Continuous current is limited by package.
NXP Semiconductors
BUK7507-30B
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G
D
S
D
gate
drain
source
mounting base; connected to drain
mbb076
Simplified outline
mb
Graphic symbol
D
G
S
1 2 3
SOT78A (TO-220AB)
3. Ordering information
Table 3.
Ordering information
Package
Name
BUK7507-30B
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78A
Type number
BUK7507-30B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 22 February 2011
2 of 14
NXP Semiconductors
BUK7507-30B
N-channel TrenchMOS standard level FET
4. Limiting values
Table 4.
Symbol
V
DS
V
DGR
V
GS
I
D
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
T
mb
= 100 °C; V
GS
= 10 V; see
Figure 1
T
mb
= 25 °C; V
GS
= 10 V; see
Figure 1;
see
Figure 3
I
DM
P
tot
T
stg
T
j
I
S
I
SM
E
DS(AL)S
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
T
mb
= 25 °C
pulsed; t
p
≤
10 µs; T
mb
= 25 °C
I
D
= 75 A; V
sup
≤
30 V; R
GS
= 50
Ω;
V
GS
= 10 V; T
j(init)
= 25 °C; unclamped
[1]
[2]
[1]
[2]
[1]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
R
GS
= 20 kΩ
Min
-
-
-20
-
-
-
-
-
-55
-55
-
-
-
-
Max
30
30
20
75
108
75
435
157
175
175
75
108
435
329
Unit
V
V
V
A
A
A
A
W
°C
°C
A
A
A
mJ
T
mb
= 25 °C; pulsed; t
p
≤
10 µs;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
Source-drain diode
Avalanche ruggedness
[1]
[2]
Continuous current is limited by package.
Current is limited by power dissipation chip rating.
120
I
D
(A)
03nm94
120
P
der
(%)
80
03na19
Capped at 75 A due to package
80
40
40
0
0
50
100
150
T
mb
(°C)
200
0
0
50
100
150
T
mb
(°C)
200
Fig 1.
Normalized continuous drain current as a
function of mounting base temperature
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
© NXP B.V. 2011. All rights reserved.
BUK7507-30B
All information provided in this document is subject to legal disclaimers.
Product data sheet
Rev. 02 — 22 February 2011
3 of 14
NXP Semiconductors
BUK7507-30B
N-channel TrenchMOS standard level FET
10
3
I
D
(A)
10
2
03nm92
Limit R
DSon
= V
DS
/ I
D
t
p
= 10
μ
s
100
μ
s
Capped at 75 A due to package
DC
10
1 ms
10 ms
100 ms
1
10
−1
1
10
V
DS
(V)
10
2
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK7507-30B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 22 February 2011
4 of 14
NXP Semiconductors
BUK7507-30B
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to
ambient
Conditions
see
Figure 4
vertical in still air
Min
-
-
Typ
-
-
Max
0.95
60
Unit
K/W
K/W
1
03nm93
δ
= 0.5
Z
th(j-mb)
(K/W)
10
−1
0.2
0.1
0.05
0.02
10
−2
P
δ
=
t
p
T
single shot
t
p
t
T
10
−3
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
t
p
(s)
1
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7507-30B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 22 February 2011
5 of 14
京公网安备 11010802033920号
EEWORLD
