Precision Monolithic Quad SPST CMOS Analog Switches
DESCRIPTION
The DG411HS series of monolithic quad analog switches
was designed to provide high speed, low error switching of
precision analog signals. Combining low power (0.35 µW)
with high speed (t
ON
: 68 ns), the DG411HS family is ideally
suited for portable and battery powered industrial and
military applications.
To achieve high-voltage ratings and superior switching
performance, the DG411HS series was built on Vishay
Siliconix’s high voltage silicon gate process. An epitaxial
layer prevents latchup.
Each switch conducts equally well in both directions when
on, and blocks input voltages up to the supply levels when
off.
The DG411HS and DG412HS respond to opposite control
logic as shown in the Truth Table. The DG413HS has two
normally open and two normally closed switches.
FEATURES
•
•
•
•
•
•
•
44 V supply max. rating
± 15 V analog signal range
On-resistance - R
DS(on)
: 25
Fast switching - t
ON
: 68 ns
Ultra low power - P
D
: 0.35 µW
TTL, CMOS compatible
Single supply capability
Available
Available
BENEFITS
•
•
•
•
Widest dynamic range
Low signal rrrors and distortion
Break-before-make switching action
Simple interfacing
APPLICATIONS
•
•
•
•
•
Precision automatic test equipment
Precision data acquisition
Communication systems
Battery powered systems
Computer peripherals
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG411HS
Dual-In-Line and SOIC
D
1
IN
1
IN
2
D
2
IN
1
D
1
S
1
V-
GND
S
4
D
4
IN
4
1
2
3
4
5
6
7
8
Top View
16
15
14
13
12
11
10
9
IN
2
D
2
S
2
V+
V
L
S
3
D
3
IN
3
5
6
7
8
S
1
V-
GND
S
4
1
2
3
4
12
11
10
9
S
2
V+
V
L
S
3
S
1
V-
NC
GND
S
4
16
15
14
13
Key
4
5
6
7
8
9
10
11 12
13
DG411HS
QFN16
DG411HS
LCC
D
1
IN
1
NC IN
2
D
2
3
2
1
20
19
18
17
16
15
14
S
2
V+
NC
V
L
S
3
D
4
IN
4
IN
3
D
3
Top View
D
4
IN
4
NC IN
3
D
3
Top View
TRUTH TABLE
Logic
0
1
DG411HS
ON
OFF
DG412HS
OFF
ON
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 72053
S13-1283-Rev. D, 27-May-13
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DG411HS, DG412HS, DG413HS
Vishay Siliconix
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG413HS
Dual-In-Line and SOIC
DG413HS
QFN16
D
1
IN
1
IN
2
D
2
IN
2
D
2
S
2
V+
V
L
S
3
D
3
5
IN
3
6
7
8
D
4
IN
4
IN
3
D
3
Top View
S
1
V-
GND
S
4
1
2
3
4
12
11
10
9
S
2
V+
NC
V
L
S
3
GND
S
4
Key
4
5
6
7
8
D
1
3
S
1
V-
DG413HS
LCC
IN
1
NC
2
1
IN
2
20
D
2
19
18
17
16
15
14
S
2
V+
NC
V
L
S
3
IN
1
D
1
S
1
V-
GND
S
4
D
4
IN
4
1
2
3
4
5
6
7
8
Top View
16
15
14
13
12
11
10
9
16
15
14
13
9
D
4
10
11
12
IN
3
13
D
3
IN
4
NC
Top View
TRUTH TABLE
Logic
0
1
SW
1
, SW
4
OFF
ON
SW
2
, SW
3
ON
OFF
ORDERING INFORMATION
Temp. Range
DG411HS, DG412HS
Package
Part Number
DG411HSDJ
DG411HSDJ-E3
DG412HSDJ
DG412HSDJ-E3
DG411HSDY
DG411HSDY-E3
DG411HSDY-T1
DG411HSDY-T1-E3
DG412HSDY
DG412HSDY-E3
DG412HSDY-T1
DG412HSDY-T1-E3
DG411HSDN-T1-E4
DG412HSDN-T1-E4
DG413HSDJ
DG413HSDJ-E3
DG413HSDY
DG413HSDY-E3
DG413HSDY-T1
DG413HSDY-T1-E3
DG413HSDN-T1-E4
16-Pin Plastic DIP
- 40 °C to 85 °C
16-Pin Narrow SOIC
16-Pin QFN 4 x 4 mm (Variation 1)
DG413HS
16-Pin Plastic DIP
- 40 °C to 85 °C
16-Pin Narrow SOIC
16-Pin QFN 4 x 4 mm (Variation 1)
www.vishay.com
2
For technical questions, contact:
pmostechsupport@vishay.com
Document Number: 72053
S13-1283-Rev. D, 27-May-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DG411HS, DG412HS, DG413HS
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Parameter
V+ to V-
GND to V-
V
L
Digital Inputs
a
, V
S
, V
D
Continuous Current (Any terminal)
Peak Current, S or D (Pulsed 1 ms, 10 % duty cycle)
Storage Temperature
(AK, AZ Suffix)
(DJ, DY, DN Suffix)
16-Pin Plastic DIP
c
16-Pin Narrow SOIC
Power Dissipation (Package)
b
d
Limit
44
25
(GND - 0.3) to (V+) + 0.3
(V-) - 2 to (V+) + 2
or 30 mA, whichever occurs first
30
100
- 65 to 150
- 65 to 125
470
600
900
900
f
Unit
V
mA
°C
16-Pin CerDIP
LCC-20
e
e
mW
16-Pin (4 x 4 mm) QFN
1880
Notes:
a. Signals on S
X
, D
X
, or IN
X
exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 6 mW/°C above 25 °C.
d. Derate 7.6 mW/°C above 75 °C.
e. Derate 12 mW/°C above 75 °C.
f. Derate 23.5 mW/°C above 70 °C.
SPECIFICATIONS
a
Test Conditions
Unless Specified
V+ = 15 V, V- = - 15 V
V
L
= 5 V, V
IN
= 2.4 V, 0.8 V
f
A Suffix
D Suffix
- 55 °C to 125 °C - 40 °C to 85 °C
Temp.
b
Full
V+ = 13.5 V, V- = - 13.5 V
I
S
= - 10 mA, V
D
= ± 8.5 V
V+ = 16.5 V, V- = - 16.5 V
V
D
= ± 15.5 mA, V
S
= ± 15.5 V
V+ = 16.5 V, V- = - 16.5 V
V
D
= V
S
= ± 15.5 V
V
IN
under test = 0.8 V
V
IN
under test = 2.4 V
f = 1 MHz
Room
Full
Room
Full
Room
Full
Room
Full
Full
Full
Room
Room
Full
Room
Full
Room
Room
25
± 0.1
± 0.1
± 0.1
- 0.25
- 20
- 0.25
- 20
- 0.4
- 40
- 0.5
- 0.5
Typ.
c
Min.
d
- 15
Max.
d
15
35
45
0.25
20
0.25
20
0.4
40
0.5
0.5
- 0.25
-5
- 0.25
-5
- 0.4
- 10
- 0.5
- 0.5
Min.
d
- 15
Max.
d
15
35
45
0.25
5
0.25
5
0.4
10
0.5
0.5
nA
Unit
V
Parameter
Analog Switch
Analog Signal Range
e
Drain-Source
On-Resistance
Switch Off
Leakage Current
Channel On
Leakage Current
Digital Control
Input Current, V
IN
Low
Input Current, V
IN
High
Input Capacitance
e
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make
Time Delay
Charge Injection
e
Symbol
V
ANALOG
R
DS(on)
I
S(off)
I
D(off)
I
D(on)
I
IL
I
IH
C
IN
0.005
0.005
5
68
42
20
22
µA
pF
t
ON
t
OFF
t
D
Q
R
L
= 300
,
C
L
= 35 pF
V
S
= ± 10 V, see figure 2
DG413HS only, V
S
= 10 V
R
L
= 300
,
C
L
= 35 pF
V
g
= 0 V, R
g
= 0
,
C
L
= 10 nF
105
127
80
94
105
116
80
90
ns
pC
Document Number: 72053
S13-1283-Rev. D, 27-May-13
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DG411HS, DG412HS, DG413HS
Vishay Siliconix
SPECIFICATIONS
a
Test Conditions
Unless Specified
V+ = 15 V, V- = - 15 V
V
L
= 5 V, V
IN
= 2.4 V, 0.8 V
f
R
L
= 50
,
C
L
= 5 pF
f = 1 MHz
f = 1 MHz
A Suffix
D Suffix
- 55 °C to 125 °C - 40 °C to 85 °C
Temp.
b
Room
Room
Room
Room
Room
Room
Full
V+ = 16.5 V, V- = - 16.5 V
V
IN
= 0 or 5 V
Room
Full
Room
Full
Room
Full
Typ.
c
- 91
- 88
12
12
30
0.0001
- 0.0001
0.0001
- 0.0001
-1
-5
-1
-5
1
5
-1
-5
1
5
-1
-5
1
5
1
5
pF
Min.
d
Max.
d
Min.
d
Max.
d
Unit
Parameter
Off Isolation
e
Channel-to-Channel
Crosstalk
e
e
e
Symbol
OIRR
X
TALK
C
S(off)
C
D(off)
C
D(on)
Dynamic Characteristics (Cont’d)
dB
Source Off Capacitance
e
Drain Off Capacitance
Power Supplies
Positive Supply Current
Negative Supply Current
Logic Supply Current
Ground Current
Channel On Capacitance
I+
I-
I
L
I
GND
µA
SPECIFICATIONS
a
(for Unipolar Supplies)
Test Conditions
Unless Specified
V+ = 12 V, V- = 0 V
V
L
= 5 V, V
IN
= 2.4 V, 0.8 V
f
A Suffix
D Suffix
- 55 °C to 125 °C - 40 °C to 85 °C
Temp.
b
Full
V+ = 10.8 V, I
S
= - 10 mA
V
D
= 3 V, 8 V
Room
Full
Room
Hot
Room
Hot
Room
Room
Room
Hot
Room
Hot
Room
Hot
Room
Hot
49
Typ.
c
Min.
d
Max.
d
12
80
100
140
180
70
79
Min.
d
Max.
d
12
80
100
140
160
70
74
ns
Unit
V
Parameter
Analog Switch
Analog Signal Range
e
Drain-Source On-Resistance
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make
Time Delay
Charge Injection
Power Supplies
Positive Supply Current
Negative Supply Current
Logic Supply Current
Ground Current
Symbol
V
ANALOG
R
DS(on)
t
ON
t
OFF
t
D
Q
95
36
60
60
0.0001
- 0.0001
0.0001
- 0.0001
-1
-5
-1
-5
R
L
= 300
,
C
L
= 35 pF
V
S
= 8 V, see figure 2
DG413HS only, V
S
= 8 V
R
L
= 300
,
C
L
= 35 pF
V
g
= 6 V, R
g
= 0
,
C
L
= 1 nF
pC
1
5
-1
-5
1
5
-1
-5
1
5
1
5
I+
I-
V+ = 13.2 V, V
IN
= 0 or 5 V
I
L
I
GND
µA
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. V
IN
= input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
4
For technical questions, contact:
pmostechsupport@vishay.com
Document Number: 72053
S13-1283-Rev. D, 27-May-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DG411HS, DG412HS, DG413HS
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
65
rDS(on)
- Drain-Source On-Resistance (Ω)
300
r
DS(on)
- Drain-Source On-Resistance (Ω)
T
A
= 25 °C
V+ = 3.0 V
V
L
= 3 V
T
A
= 25 °C
V
L
= 5 V
55
±5V
250
45
±8V
± 10 V
± 12 V
± 15 V
200
V+ = 5.0 V
35
150
25
100
15
± 20 V
50
V+ = 8.0 V
V+ = 12.0 V
V+ = 15.0 V
5
- 20
0
- 15
- 10
-5
0
5
10
15
20
0
2
4
6
8
10
12
14
V
D
- Drain Voltage (V)
V
D
- Drain Voltage (V)
V+ = 20.0 V
16
18
20
On-Resistance vs. V
D
and Dual Supply Voltage
50
r
DS(on)
- Drain-Source On-Resistance (Ω)
V+ = + 5 V
V - = - 15 V
V
L
= 5 V
I
D(on)
I
S(off)
I
D(off)
- 25
45
40
35
On-Resistance vs. V
D
and Unipolar Supply Voltage
V+ = 15 V
V - = - 15 V
V
L
= 5 V
125 °C
30
85 °C
25
25 °C
20
- 55 °C
15
10
5
- 15
25
0
I
S
, I
D
(pA)
- 50
- 75
- 100
- 15
-10
-5
0
5
10
15
- 10
V
D
or V
S
- Drain or Source Voltage (V)
-5
0
5
V
D
- Drain Voltage (V)
10
15
Leakage Current vs. Analog Voltage
75
r
DS(on)
- Drain-Source On-Resistance (Ω)
65
125 °C
85 °C
45
35
25
15
5
0
2
4
6
8
10
12
V
D
- Drain Voltage (V)
25 °C
LOSS, OIRR, X
TLAK
(dB)
55
V+ = 12 V
V- = 0 V
V
L
= 5 V
0
- 10
0
- 20
- 30
- 40
- 50
- 60
- 70
- 80
- 90
- 100
- 110
On-Resistance vs. V
D
and Temperature
LOSS
X
TALK
OIRR
V+ = 15 V
V - = - 15 V
V
L
= 5 V
R
L
= 50
Ω
- 55 °C
100 K
1M
10 M
Frequency (Hz)
100 M
1G
On-Resistance vs. V
D
and Temperature
Insertion Loss, Off-Isolation, Crosstalk
vs. Frequency
Document Number: 72053
S13-1283-Rev. D, 27-May-13
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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