CS2D, CS2G, CS2J, CS2K, CS2M
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Vishay General Semiconductor
Surface Mount Glass Passivated Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated pellet chip junction
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DO-214AA (SMB)
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
I
R
V
F
at I
F
= 2.0 A (T
A
= 125 °C)
T
J
max.
Package
Diode variations
2.0 A
200 V, 400 V, 600 V, 800 V, 1000 V
50 A
5.0 μA
0.90 V
150 °C
DO-214AA (SMB)
Single die
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies,
inverters, converters, and freewheeling diodes for
consumer, and telecommunication.
MECHANICAL DATA
Case:
DO-214AA (SMB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test
Polarity:
Color band denotes cathode end
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Average forward rectified current
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Operating junction and storage temperature range
Notes
(1)
Free air, mounted on recommended copper pad area
(2)
Mounted on 8 mm x 8 mm copper pad areas
V
RRM
I
F(AV) (1)
I
F(AV) (2)
I
FSM
T
J
, T
STG
SYMBOL
CS2D
D
200
CS2G
G
400
CS2J
J
600
1.6
2.0
50
-55 to +150
CS2K
K
800
CS2M
M
1000
V
A
A
°C
UNIT
Revision: 25-Jul-16
Document Number: 87636
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
CS2D, CS2G, CS2J, CS2K, CS2M
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
I
F
= 1.0 A
Maximum instantaneous forward voltage
I
F
= 2.0 A
I
F
= 1.0 A
I
F
= 2.0 A
Maximum DC reverse current at rated DC
blocking voltage
Typical reverse recovery time
Typical junction capacitance
Rated V
R
T
A
= 25 °C
V
F (1)
T
A
= 125 °C
T
A
= 25 °C
T
A
= 125 °C
I
R (2)
t
rr
C
J
SYMBOL
TYP.
0.92
0.99
0.81
0.90
-
-
2.1
12
MAX.
-
1.2
-
0.98
5.0
350
-
-
μA
μs
pF
V
UNIT
I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
4.0 V, 1 MHz
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: pulse width
40 ms
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
SYMBOL
R
JA
(1)
R
JM
(2)
CS2D
CS2G
CS2J
97
20
CS2K
CS2M
UNIT
°C/W
Notes
(1)
Free air, mounted on recommended copper pad area; thermal resistance R
JA
- junction to ambient
(2)
Mounted on 8 mm x 8 mm copper pad areas, R
- junction to mount at the terminal
JM
ORDERING INFORMATION
(Example)
PREFERRED P/N
CS2J-E3/I
UNIT WEIGHT (g)
0.096
PREFERRED PACKAGE CODE
I
BASE QUANTITY
3200
DELIVERY MODE
13" diameter plastic tape and reel
Revision: 25-Jul-16
Document Number: 87636
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
CS2D, CS2G, CS2J, CS2K, CS2M
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
Average Forward Rectified Current (A)
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
Rth
JM
= 20 C/W, mounted on
8 mm x 8 mm copper pad areas
Rth
JA
=97 C/W
1000
T
J
= 150 °C
100
T
J
= 125 °C
Instantaneous Reverse Current (mA)
10
T
J
= 75 °C
1
T
J
= 25 °C
0.1
0.01
10
20
30
40
50
60
70
80
90
100
Mount Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics
2.4
2.0
1.6
1.2
0.8
0.4
D = t
p
/T
D = 0.2
D = 0.1
D = 1.0
Junction Capacitance (pF)
D = 0.5
D = 0.3
D = 0.8
100
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
Average Power Loss (W)
10
T
t
p
0.0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
1
0.1
1
10
100
Average Forward Current (A)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
Transient Thermal Impedance (°C/W)
100
1000
Junction to Ambient
Instantaneous Forward Current (A)
10
T
J
= 150 °C
1
T
J
= 125 °C
T
J
= 75 °C
100
10
0.1
T
J
= 25 °C
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
1
0.01
0.1
1
10
100
1000
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
Revision: 25-Jul-16
Document Number: 87636
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
CS2D, CS2G, CS2J, CS2K, CS2M
www.vishay.com
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-214AA (SMB)
Cathode Band
Mounting Pad Layout
0.085 (2.159) MAX.
0.086 (2.20)
0.077 (1.95)
0.155 (3.94)
0.130 (3.30)
0.086 (2.18) MIN.
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.220 (5.59)
0.205 (5.21)
Vishay General Semiconductor
0.060 (1.52) MIN.
0.220 (5.59) REF.
Revision: 25-Jul-16
Document Number: 87636
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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Disclaimer
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Revision: 08-Feb-17
1
Document Number: 91000