AT45DB041D-SU-25 datasheet, PDF

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AT45DB041D-SU-25: DescriptionFlash Memory 4M 2.5-3.6V 50Mhz Data Flash; Categorystorage; File Size1MB，53 Pages; ManufacturerAdesto Technologies

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AT45DB041D-SU-25 Overview

Flash Memory 4M 2.5-3.6V 50Mhz Data Flash

AT45DB041D-SU-25 Parametric

Parameter Name	Attribute value
Product Category	Flash Memory
Manufacturer	Adesto Technologies
RoHS	Details
Mounting Style	SMD/SMT
Package / Case	SOIC-8
Memory Size	4 Mbit
Interface Type	SPI
Memory Type	NOR
Speed	50 MHz
Supply Voltage - Max	3.6 V
Supply Voltage - Min	2.5 V
Supply Current - Max	15 mA
Operating Temperature Range	- 40 C to + 85 C
Architecture	Chip Erase
Data Bus Width	8 bit
Maximum Clock Frequency	50 MHz
Maximum Operating Temperature	+ 85 C
Minimum Operating Temperature	- 40 C
Organization	512 k x 8
Standard	Not Supported
Factory Pack Quantity	90
Timing Type	Synchronous
Unit Weight	0.019048 oz

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Features

•

Single 2.5V or 2.7V to 3.6V Supply

•

RapidS

Serial Interface: 66MHz Maximum Clock Frequency

•

– SPI Compatible Modes 0 and 3

User Configurable Page Size

– 256-Bytes per Page

– 264-Bytes per Page

– Page Size Can Be Factory Pre-configured for 256-Bytes

Page Program Operation

– Intelligent Programming Operation

– 2,048 Pages (256-/264-Bytes/Page) Main Memory

Flexible Erase Options

– Page Erase (256-Bytes)

– Block Erase (2-Kbytes)

– Sector Erase (64-Kbytes)

– Chip Erase (4Mbits)

Two SRAM Data Buffers (256-, 264-Bytes)

– Allows Receiving of Data while Reprogramming the Flash Array

Continuous Read Capability through Entire Array

– Ideal for Code Shadowing Applications

Low-power Dissipation

– 7mA Active Read Current Typical

– 25μA Standby Current Typical

– 15μA Deep Power-down Typical

Hardware and Software Data Protection Features

– Individual Sector

Sector Lockdown for Secure Code and Data Storage

– Individual Sector

Security: 128-byte Security Register

– 64-byte User Programmable Space

– Unique 64-byte Device Identifier

JEDEC Standard Manufacturer and Device ID Read

100,000 Program/Erase Cycles Per Page Minimum

Data Retention – 20 Years

Industrial Temperature Range

Green (Pb/Halide-free/RoHS Compliant) Packaging Options

•

4-megabit

2.5-volt or

2.7-volt

DataFlash

AT45DB041D

(Not recommended for

new designs. Use

AT45DB041E.)

•

1. Description

The AT45DB041D is a 2.5V or 2.7V, serial-interface Flash memory ideally suited for a

wide variety of digital voice-, image-, program code- and data-storage applications.

The AT45DB041D supports RapidS serial interface for applications requiring very

high speed operations. RapidS serial interface is SPI compatible for frequencies up to

66MHz. Its 4,325,376-bits of memory are organized as 2,048 pages of 256-bytes or

264-bytes each. In addition to the main memory, the AT45DB041D also contains two

SRAM buffers of 256-/264-bytes each. The buffers allow the receiving of data while a

page in the main Memory is being reprogrammed, as well as writing a continuous data

stream. EEPROM emulation (bit or byte alterability) is easily handled with a self-con-

tained three step read-modify-write operation. Unlike conventional Flash memories

that are accessed randomly with multiple address lines and a parallel interface, the

DataFlash uses a RapidS serial interface to sequentially access its data. The simple

sequential access dramatically

3595T–DFLASH–8/2013

reduces active pin count, facilitates hardware layout, increases system reliability, minimizes

switching noise, and reduces package size. The device is optimized for use in many commercial

and industrial applications where high-density, low-pin count, low-voltage and low-power are

essential.

To allow for simple in-system reprogrammability, the AT45DB041D does not require high input

voltages for programming. The device operates from a single power supply, 2.5V to 3.6V or 2.7V

to 3.6V, for both the program and read operations. The AT45DB041D is enabled through the

chip select pin (CS) and accessed via a three-wire interface consisting of the Serial Input (SI),

Serial Output (SO), and the Serial Clock (SCK).

All programming and erase cycles are self-timed.

2. Pin Configurations and Pinouts

Table 2-1.

Symbol

Pin Configurations

Name and Function

Chip Select: Asserting the CS pin selects the device. When the CS pin is deasserted, the device will be deselected

and normally be placed in the standby mode (not Deep Power-Down mode), and the output pin (SO) will be in a

high-impedance state. When the device is deselected, data will not be accepted on the input pin (SI).

A high-to-low transition on the CS pin is required to start an operation, and a low-to-high transition is required to

end an operation. When ending an internally self-timed operation such as a program or erase cycle, the device

will not enter the standby mode until the completion of the operation.

Serial Clock: This pin is used to provide a clock to the device and is used to control the flow of data to and from

the device. Command, address, and input data present on the SI pin is always latched on the rising edge of SCK,

while output data on the SO pin is always clocked out on the falling edge of SCK.

Serial Input: The SI pin is used to shift data into the device. The SI pin is used for all data input including

command and address sequences. Data on the SI pin is always latched on the rising edge of SCK.

Serial Output: The SO pin is used to shift data out from the device. Data on the SO pin is always clocked out on

the falling edge of SCK.

Write Protect: When the WP pin is asserted, all sectors specified for protection by the Sector Protection Register

will be protected against program and erase operations regardless of whether the Enable Sector Protection

command has been issued or not. The WP pin functions independently of the software controlled protection method.

After the WP pin goes low, the content of the Sector Protection Register cannot be modified.

Asserted

State

Type

Low

Input

SCK

–

Input

–

Input

Output

If a program or erase command is issued to the device while the WP pin is asserted, the device will simply ignore

the command and perform no operation. The device will return to the idle state once the CS pin has been

deasserted. The Enable Sector Protection command and Sector Lockdown command, however, will be

recognized by the device when the WP pin is asserted.

The WP pin is internally pulled-high and may be left floating if hardware controlled protection will not be used.

However, it is recommended that the WP pin also be externally connected to V

whenever possible.

Reset: A low state on the reset pin (RESET) will terminate the operation in progress and reset the internal state

machine to an idle state. The device will remain in the reset condition as long as a low level is present on the RESET

pin. Normal operation can resume once the RESET pin is brought back to a high level.

The device incorporates an internal power-on reset circuit, so there are no restrictions on the RESET pin during

power-on sequences. If this pin and feature are not utilized it is recommended that the RESET pin be driven high

externally.

Device Power Supply: The V

pin is used to supply the source voltage to the device.

Operations at invalid V

voltages may produce spurious results and should not be attempted.

Ground: The ground reference for the power supply. GND should be connected to the system ground.

Low

Input

RESET

Low

Input

GND

–

Power

Ground

AT45DB041D

3595T–DFLASH–8/2013

4. Memory Array

To provide optimal flexibility, the memory array of the AT45DB041D is divided into three levels of

granularity comprising of sectors, blocks, and pages. The “Memory Architecture Diagram” illus-

trates the breakdown of each level and details the number of pages per sector and block. All

program operations to the DataFlash occur on a page-by-page basis. The erase operations can

be performed at the chip, sector, block or page level.

Figure 4-1.

Memory Architecture Diagram

BLOCK ARCHITECTURE

SECTOR 0a

BLOCK 0

BLOCK 1

BLOCK 2

SECTOR 0b = 248 Pages

63,488 / 65,472-bytes

SECTOR ARCHITECTURE

SECTOR 0a = 8 Pages

2,048 / 2,112-bytes

PAGE ARCHITECTURE

8 Pages

BLOCK 0

PAGE 0

PAGE 1

SECTOR 0b

PAGE 6

BLOCK 30

PAGE 7

PAGE 8

PAGE 9

SECTOR 1 = 256 Pages

65,536 / 67,584-bytes

BLOCK 31

BLOCK 33

SECTOR 2 = 256 Pages

65,536 / 67,584-bytes

SECTOR 1

BLOCK 1

BLOCK 32

PAGE 14

PAGE 15

BLOCK 62

BLOCK 63

BLOCK 64

PAGE 16

PAGE 17

PAGE 18

SECTOR 6 = 256 Pages

65,536 / 67,584-bytes

BLOCK 65

SECTOR 7 = 256 Pages

65,536 / 67,584-bytes

BLOCK 254

BLOCK 255

PAGE 2,046

PAGE 2,047

Block = 2,048 / 2,112-bytes

Page = 256 / 264-bytes

5. Device Operation

The device operation is controlled by instructions from the host processor. The list of instructions

and their associated opcodes are contained in

Tables 15-1 through 15-7.

A valid instruction

starts with the falling edge of CS followed by the appropriate 8-bit opcode and the desired buffer

or main memory address location. While the CS pin is low, toggling the SCK pin controls the

loading of the opcode and the desired buffer or main memory address location through the SI

(serial input) pin. All instructions, addresses, and data are transferred with the most significant

bit (MSB) first.

Buffer addressing for the DataFlash standard page size (264-bytes) is referenced in the data-

sheet using the terminology BEA8 - BFA0 to denote the nine address bits required to designate

a byte address within a buffer. Main memory addressing is referenced using the terminology

PA10 - PA0 and BA8 - BA0, where PA10 - PA0 denotes the 11 address bits required to desig-

nate a page address and BA8 - BA0 denotes the nine address bits required to designate a byte

address within the page.

For the “Power of 2” binary page size (256-bytes), the Buffer addressing is referenced in the

datasheet using the conventional terminology BFA7 - BFA0 to denote the eight address bits

required to designate a byte address within a buffer. Main memory addressing is referenced

using the terminology A18 - A0, where A18 - A8 denotes the 11 address bits required to desig-

nate a page address and A7 - A0 denotes the eight address bits required to designate a byte

address within a page.

AT45DB041D

3595T–DFLASH–8/2013

AT45DB041D

6. Read Commands

By specifying the appropriate opcode, data can be read from the main memory or from either

one of the two SRAM data buffers. The DataFlash supports RapidS protocols for Mode 0 and

Mode 3. Please refer to the “Detailed Bit-level Read Timing” diagrams in this datasheet for

details on the clock cycle sequences for each mode.

6.1

Continuous Array Read (Legacy Command – E8H): Up to 66MHz

By supplying an initial starting address for the main memory array, the Continuous Array Read

command can be utilized to sequentially read a continuous stream of data from the device by

simply providing a clock signal; no additional addressing information or control signals need to

be provided. The DataFlash incorporates an internal address counter that will automatically

increment on every clock cycle, allowing one continuous read operation without the need of

additional address sequences. To perform a continuous read from the DataFlash standard page

size (264-bytes), an opcode of E8H must be clocked into the device followed by three address

bytes (which comprise the 24-bit page and byte address sequence) and four don’t care bytes.

The first 11 bits (PA10 - PA0) of the 20-bit address sequence specify which page of the main

memory array to read, and the last nine bits (BA8 - BA0) of the 20-bit address sequence specify

the starting byte address within the page. To perform a continuous read from the binary page

size (256-bytes), the opcode (E8H) must be clocked into the device followed by three address

bytes and four don’t care bytes. The first 11 bits (A18 - A8) of the 19-bits sequence specify which

page of the main memory array to read, and the last 8 bits (A7 - A0) of the 19-bits address

sequence specify the starting byte address within the page. The don’t care bytes that follow the

address bytes are needed to initialize the read operation. Following the don’t care bytes, addi-

tional clock pulses on the SCK pin will result in data being output on the SO (serial output) pin.

The CS pin must remain low during the loading of the opcode, the address bytes, the don’t care

bytes, and the reading of data. When the end of a page in main memory is reached during a

Continuous Array Read, the device will continue reading at the beginning of the next page with

no delays incurred during the page boundary crossover (the crossover from the end of one page

to the beginning of the next page). When the last bit in the main memory array has been read,

the device will continue reading back at the beginning of the first page of memory. As with cross-

ing over page boundaries, no delays will be incurred when wrapping around from the end of the

array to the beginning of the array.

A low-to-high transition on the CS pin will terminate the read operation and tri-state the output

pin (SO). The maximum SCK frequency allowable for the Continuous Array Read is defined by

the f

CAR1

specification. The Continuous Array Read bypasses both data buffers and leaves the

contents of the buffers unchanged.

6.2

Continuous Array Read (High Frequency Mode – 0BH): Up to 66MHz

This command can be used with the serial interface to read the main memory array sequentially

in high speed mode for any clock frequency up to the maximum specified by f

CAR1

. To perform a

continuous read array with the page size set to 264-bytes, the CS must first be asserted then an

opcode 0BH must be clocked into the device followed by three address bytes and a dummy

byte. The first 11 bits (PA10 - PA0) of the 20-bit address sequence specify which page of the

main memory array to read, and the last nine bits (BA8 - BA0) of the 20-bit address sequence

specify the starting byte address within the page. To perform a continuous read with the page

size set to 256-bytes, the opcode, 0BH, must be clocked into the device followed by three

address bytes (A18 - A0) and a dummy byte. Following the dummy byte, additional clock pulses

on the SCK pin will result in data being output on the SO (serial output) pin.

3595T–DFLASH–8/2013

AT45DB041D-SU-25 Related Products

	AT45DB041D-SU-25	AT45DB041D-MU-25-SL383	AT45DB041D-SUEX-T	AT45DB041D-MU-25	AT45DB041D-SSUEX-B
Description	Flash Memory 4M 2.5-3.6V 50Mhz Data Flash	Flash Memory 4M, 66MHz 2.5-3.6V DataFlash	Flash Memory 8-SOIC-W, IND TEMP, 2.7V, Tu0026R	Flash Memory 4M, 2.5V, 50Mhz DataFlash	Flash Memory 8-SOIC-N, IND TEMP, 2.7V, TUBE
Product Category	Flash Memory	Flash Memory	Flash Memory	Flash Memory	Flash Memory
Manufacturer	Adesto Technologies	Adesto Technologies	Adesto Technologies	Adesto Technologies	Adesto Technologies
Mounting Style	SMD/SMT	SMD/SMT	SMD/SMT	SMD/SMT	SMD/SMT
Package / Case	SOIC-8	VDFN-8	SOIC-8	VDFN-8	SOIC-8
Memory Size	4 Mbit	4 Mbit	4 Mbit	4 Mbit	4 Mbit
Interface Type	SPI	SPI	SPI	SPI	SPI
Memory Type	NOR	NOR	NOR	NOR	NOR
Speed	50 MHz	50 MHz	66 MHz	50 MHz	66 MHz
Supply Voltage - Max	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
Supply Voltage - Min	2.5 V	2.5 V	2.7 V	2.5 V	2.7 V
Supply Current - Max	15 mA	15 mA	15 mA	15 mA	15 mA
Operating Temperature Range	- 40 C to + 85 C	- 40 C to + 85 C	- 40 C to + 85 C	- 40 C to + 85 C	- 40 C to + 85 C
Architecture	Chip Erase	Chip Erase	Chip Erase	Chip Erase	Chip Erase
Data Bus Width	8 bit	8 bit	8 bit	8 bit	8 bit
Maximum Clock Frequency	50 MHz	50 MHz	66 MHz	50 MHz	66 MHz
Maximum Operating Temperature	+ 85 C	+ 85 C	+ 85 C	+ 85 C	+ 85 C
Minimum Operating Temperature	- 40 C	- 40 C	- 40 C	- 40 C	- 40 C
Organization	512 k x 8	512 k x 8	512 k x 8	512 k x 8	512 k x 8
Timing Type	Synchronous	Synchronous	Synchronous	Synchronous	Synchronous
RoHS	Details	Details	-	Details	-
Factory Pack Quantity	90	5000	-	490	-
Unit Weight	0.019048 oz	-	0.019048 oz	-	0.019048 oz

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