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5962R0622902VXX

Description
Standard SRAM, 512KX32, 20ns, CMOS, CQFP68
Categorystorage    storage   
File Size370KB,18 Pages
ManufacturerMicrochip
Websitehttps://www.microchip.com
Download Datasheet Parametric View All

5962R0622902VXX Overview

Standard SRAM, 512KX32, 20ns, CMOS, CQFP68

5962R0622902VXX Parametric

Parameter NameAttribute value
MakerMicrochip
package instructionQFF,
Reach Compliance Codecompliant
ECCN code3A001.A.2.C
Maximum access time20 ns
Other featuresIT CAN BE USED AS 2 BANK OF 512K X 16 OR 4 BANK OF 512K X 8 ALSO
JESD-30 codeS-CQFP-F68
JESD-609 codee4
length24.14 mm
memory density16777216 bit
Memory IC TypeSTANDARD SRAM
memory width32
Number of functions1
Number of terminals68
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize512KX32
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeQFF
Package shapeSQUARE
Package formFLATPACK
Parallel/SerialPARALLEL
Certification statusQualified
Filter levelMIL-PRF-38535 Class V
Maximum seat height4.7 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelMILITARY
Terminal surfaceGOLD
Terminal formFLAT
Terminal pitch1.27 mm
Terminal locationQUAD
total dose300k Rad(Si) V
width24.14 mm
Base Number Matches1
Features
16 Mbit SRAM Multi Chip Module
Allows 32-, 16- or 8-bit access configuration
Operating Voltage: 3.3V
+
0.3V
Access Time
– 20 ns, 18 ns for AT68166F
Power Consumption
– Active: 620 mW per byte (Max) @ 18ns - 415 mW per byte (Max) @ 50ns
(1)
– Standby: 13 mW (Typ)
Military Temperature Range: -55 to +125°C
TTL-Compatible Inputs and Outputs
Asynchronous
Die manufactured on Atmel 0.25 µm Radiation Hardened Process
No Single Event Latch Up below LET Threshold of 80 MeV/mg/cm
2
Tested up to a Total Dose of 300 krads (Si) according to MIL-STD-883 Method 1019
ESD Better than 4000V
Quality Grades:
– QML-Q or V with SMD 5962-06229
– ESCC
950 Mils Wide MQFP 68 Package
Mass : 8.5 grams
1. Only for AT68166F-18. 450mW for AT68166F-20.
Rad Hard
16 MegaBit 3.3V
SRAM Multi-
Chip Module
AT68166F
Note:
Description
The AT68166F is a 16Mbit SRAM packaged in a hermetic Multi Chip Module
(MCM) for space applications.
The AT68166F MCM incorporates four 4Mbit AT60142FT SRAM dice. It can be orga-
nized as either one bank of 512Kx8, two banks of 512Kx16 or four banks of 512Kx8. It
combines rad-hard capabilities, a latch-up threshold of 80MeV.cm²/mg, a Multiple Bit
Upset immunity and a total dose tolerance of 300Krads, with a fast access time.
The MCM packaging technology allows a reduction of the PCB area by 50% with a
weight savings of 75% compared to four 4Mbit packages.
Thanks to the small size of the 4Mbit SRAM die, Atmel has been able to accommo-
date the assembly of the four dice on one side of the package which facilitates the
power dissipation.
The compatibility with other products allows designers to easily migrate to the Atmel
AT68166F memory.
The AT68166F is powered at 3.3V.
The AT68166F is processed according to the test methods of the latest revision of the
MIL-PRF-38535 or the ESCC 9000.
7747B–AERO–04/09

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