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MT5C1001F-20L/883C

Description
Standard SRAM, 1MX1, 20ns, CMOS, CDSO32, CERAMIC, FLATPACK-32
Categorystorage    storage   
File Size164KB,13 Pages
ManufacturerMicross
Websitehttps://www.micross.com
Download Datasheet Parametric View All

MT5C1001F-20L/883C Overview

Standard SRAM, 1MX1, 20ns, CMOS, CDSO32, CERAMIC, FLATPACK-32

MT5C1001F-20L/883C Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMicross
Parts packaging codeDFP
package instructionSOF,
Contacts32
Reach Compliance Codeunknown
ECCN code3A001.A.2.C
Maximum access time20 ns
Other featuresTTL COMPATIBLE INPUTS/OUTPUTS; BATTERY BACKUP; LOW POWER STANDBY
JESD-30 codeR-CDSO-F32
JESD-609 codee0
length20.828 mm
memory density1048576 bit
Memory IC TypeSTANDARD SRAM
memory width1
Number of functions1
Number of terminals32
word count1048576 words
character code1000000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize1MX1
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeSOF
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Filter levelMIL-STD-883 Class C
Maximum seat height2.9718 mm
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelMILITARY
Terminal surfaceTIN LEAD
Terminal formFLAT
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width10.414 mm
Base Number Matches1
Austin Semiconductor, Inc.
1M x 1 SRAM
SRAM MEMORY ARRAY
AVAILABLE AS MILITARY
SPECIFICATIONS
• SMD 5962-92316
• MIL-STD-883
MT5C1001
Limited Availability
PIN ASSIGNMENT
(Top View)
SRAM
28-Pin DIP (C)
(400 MIL)
A10
A11
A12
A13
A14
A15
NC
A16
A17
A18
A19
Q
WE\
Vss
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
Vcc
A9
A8
A7
A6
A5
A4
NC
A3
A2
A1
A0
D
CE\
32-Pin LCC (EC)
32-Pin SOJ (DCJ)
A10
A11
A12
NC
A13
A14
A15
NC
A16
A17
A18
A19
NC
Q
WE\
Vss
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
Vcc
NC
A9
A8
A7
A6
A5
A4
A3
NC
A2
NC
A1
A0
D
CE\
FEATURES
High Speed: 20, 25, 35, and 45
Battery Backup: 2V data retention
Low power standby
Single +5V (+10%) Power Supply
Easy memory expansion with CE\ and OE\ options.
All inputs and outputs are TTL compatible
Three-state output
32-Pin Flat Pack (F)
OPTIONS
• Timing
20ns access
25ns access
35ns access
45ns access
55ns access
70ns access
• Package(s)
Ceramic DIP (400 mil)
Ceramic LCC
Ceramic Flatpack
Ceramic SOJ
MARKING
-20
-25
-35
-45
-55*
-70*
A10
A11
A12
NC
A13
A14
A15
NC
A16
A17
A18
A19
NC
Q
WE\
Vss
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
Vcc
NC
A9
A8
A7
A6
A5
A4
A3
NC
A2
NC
A1
A0
D
CE\
C
EC
F
DCJ
No. 109
No. 207
No. 303
No. 501
GENERAL DESCRIPTION
The MT5C1001 employs low power, high-performance
silicon-gate CMOS technology. Static design eliminates the
need for external clocks or timing strobes while CMOS circuitry
reduces power consumption and provides for greater
reliability.
For flexibility in high-speed memory applications, ASI
offers chip enable (CE\) and output enable (OE\) capability.
These enhancements can place the outputs in High-Z for addi-
tional flexibility in system design. Writing to these devices is
accomplished when write enable (WE|) and CE\ inputs are both
LOW. Reading is accomplished when WE\ remains HIGH while
CE\ and OE\ go LOW. The devices offer a reduced power
standby mode when disabled. This allows system designs to
achieve low standby power requirements.
The “L” version provides an approximate 50 percent
reduction in CMOS standby current (I
SBC2
) over the standard
version.
All devices operation from a single +5V power supply
and all inputs and outputs are fully TTL compatible.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
• Operating Temperature Ranges
Industrial (-40
o
C to +85
o
C)
IT
o
o
Military (-55 C to +125 C)
XT
• 2V data retention/low power
L
*Electrical characteristics identical to those provided for the
45ns access devices.
For more products and information
please visit our web site at
www.austinsemiconductor.com
MT5C1001
Rev. 2.0 2/00
1
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