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SN74LVC3G34
TRIPLE BUFFER GATE
www.ti.com
SCES366I – AUGUST 2001 – REVISED SEPTEMBER 2006
FEATURES
•
•
•
•
•
•
•
•
Available in the Texas Instruments
NanoStar™ and NanoFree™ Packages
Supports 5-V V
CC
Operation
Inputs Accept Voltages to 5.5 V
Max t
pd
of 4.1 ns at 3.3 V
Low Power Consumption, 10-µA Max I
CC
±24-mA
Output Drive at 3.3 V
Typical V
OLP
(Output Ground Bounce)
<0.8 V at V
CC
= 3.3 V, T
A
= 25°C
Typical V
OHV
(Output V
OH
Undershoot)
>2 V at V
CC
= 3.3 V, T
A
= 25°C
DCT PACKAGE
(TOP VIEW)
•
•
•
I
off
Supports Partial-Power-Down Mode
Operation
Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
ESD Protection Exceeds JESD 22
– 2000-V Human-Body Model (A114-A)
– 200-V Machine Model (A115-A)
– 1000-V Charged-Device Model (C101)
DCU PACKAGE
(TOP VIEW)
YEA, YEP, YZA,
OR YZP PACKAGE
(BOTTOM VIEW)
1A
3Y
2A
GND
1
2
3
4
8
7
6
5
V
CC
1Y
3A
2Y
1A
3Y
2A
GND
1
2
3
4
8
7
6
5
V
CC
1Y
3A
2Y
GND
2A
3Y
1A
4 5
3 6
2 7
1 8
2Y
3A
1Y
V
CC
See mechanical drawings for dimensions.
DESCRIPTION/ORDERING INFORMATION
This triple buffer gate is designed for 1.65-V to 5.5-V V
CC
operation. The SN74LVC3G34 performs the Boolean
function Y = A in positive logic.
NanoStar™ and NanoFree™ package technology is a major breakthrough in IC packaging concepts, using the
die as the package.
This device is fully specified for partial-power-down applications using I
off
. The I
off
circuitry disables the outputs,
preventing damaging current backflow through the device when it is powered down.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NanoStar, NanoFree are trademarks of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2001–2006, Texas Instruments Incorporated
SN74LVC3G34
TRIPLE BUFFER GATE
SCES366I – AUGUST 2001 – REVISED SEPTEMBER 2006
www.ti.com
ORDERING INFORMATION
T
A
PACKAGE
(1)
NanoStar™ – WCSP (DSBGA)
0.17-mm Small Bump – YEA
NanoFree™ – WCSP (DSBGA)
0.17-mm Small Bump – YZA (Pb-free)
–40°C to 85°C
NanoStar™ – WCSP (DSBGA)
0.23-mm Large Bump – YEP
NanoFree™ – WCSP (DSBGA)
0.23-mm Large Bump – YZP (Pb-free)
SSOP – DCT
VSSOP – DCU
(1)
(2)
Reel of 3000
Reel of 3000
Reel of 250
ORDERABLE PART NUMBER
SN74LVC3G34YEAR
SN74LVC3G34YZAR
Reel of 3000
SN74LVC3G34YEPR
SN74LVC3G34YZPR
SN74LVC3G34DCTR
SN74LVC3G34DCUR
SN74LVC3G34DCUT
C34_ _ _
C34_
_ _ _C9_
TOP-SIDE MARKING
(2)
Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available at
www.ti.com/sc/package.
DCT: The actual top-side marking has three additional characters that designate the year, month, and assembly/test site.
DCU: The actual top-side marking has one additional character that designates the assembly/test site.
YEA/YZA, YEP/YZP: The actual top-side marking has three preceding characters to denote year, month, and sequence code, and one
following character to designate the assembly/test site. Pin 1 identifier indicates solder-bump composition (1 = SnPb,
•
= Pb-free).
FUNCTION TABLE
(EACH GATE)
INPUT
A
H
L
OUTPUT
Y
H
L
LOGIC DIAGRAM (POSITIVE LOGIC)
1A
1
7
1Y
2A
3
5
2Y
3A
6
2
3Y
2
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SN74LVC3G34
TRIPLE BUFFER GATE
SCES366I – AUGUST 2001 – REVISED SEPTEMBER 2006
Absolute Maximum Ratings
(1)
over operating free-air temperature range (unless otherwise noted)
MIN
V
CC
V
I
V
O
V
O
I
IK
I
OK
I
O
Supply voltage range
Input voltage range
(2)
Voltage range applied to any output in the high-impedance or power-off state
(2)
Voltage range applied to any output in the high or low
Input clamp current
Output clamp current
Continuous output current
Continuous current through V
CC
or GND
DCT package
θ
JA
Package thermal impedance
(4)
DCU package
YEA/YZA package
YEP/YZP package
T
stg
(1)
(2)
(3)
(4)
Storage temperature range
–65
V
I
< 0
V
O
< 0
state
(2) (3)
–0.5
–0.5
–0.5
–0.5
MAX
6.5
6.5
6.5
V
CC
+ 0.5
–50
–50
±50
±100
220
227
140
102
150
°C
°C/W
UNIT
V
V
V
V
mA
mA
mA
mA
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The input negative-voltage and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
The value of V
CC
is provided in the recommended operating conditions table.
The package thermal impedance is calculated in accordance with JESD 51-7.
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SN74LVC3G34
TRIPLE BUFFER GATE
SCES366I – AUGUST 2001 – REVISED SEPTEMBER 2006
www.ti.com
Recommended Operating Conditions
(1)
MIN
V
CC
Supply voltage
Operating
Data retention only
V
CC
= 1.65 V to 1.95 V
V
IH
High-level input voltage
V
CC
= 2.3 V to 2.7 V
V
CC
= 3 V to 3.6 V
V
CC
= 4.5 V to 5.5 V
V
CC
= 1.65 V to 1.95 V
V
IL
Low-level input voltage
V
CC
= 2.3 V to 2.7 V
V
CC
= 3 V to 3.6 V
V
CC
= 4.5 V to 5.5 V
V
I
V
O
Input voltage
Output voltage
V
CC
= 1.65 V
V
CC
= 2.3 V
I
OH
High-level output current
V
CC
= 3 V
V
CC
= 4.5 V
V
CC
= 1.65 V
V
CC
= 2.3 V
I
OL
Low-level output current
V
CC
= 3 V
V
CC
= 4.5 V
V
CC
= 1.8 V
±
0.15 V, 2.5 V
±
0.2 V
∆t/∆v
T
A
(1)
Input transition rise or fall rate
Operating free-air temperature
V
CC
= 3.3 V
±
0.3 V
V
CC
= 5 V
±
0.5 V
–40
0
0
1.65
1.5
0.65
×
V
CC
1.7
2
0.7
×
V
CC
0.35
×
V
CC
0.7
0.8
0.3
×
V
CC
5.5
V
CC
–4
–8
–16
–24
–32
4
8
16
24
32
20
10
5
85
°C
ns/V
mA
mA
V
V
V
V
MAX
5.5
UNIT
V
All unused inputs of the device must be held at V
CC
or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs,
literature number SCBA004.
4
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