FRM230H3 datasheet, PDF - EEWORLD Datasheet

FRM230H3: DescriptionPower Field-Effect Transistor, 8A I(D), 200V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA; CategoryDiscrete semiconductor The transistor; File Size56KB，1 Pages; ManufacturerHarris; Websitehttp://www.harris.com/

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FRM230H3 Overview

Power Field-Effect Transistor, 8A I(D), 200V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Harris
package instruction	FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	RADIATION HARDENED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V
Maximum drain current (Abs) (ID)	8 A
Maximum drain current (ID)	8 A
Maximum drain-source on-resistance	0.5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-204AA
JESD-30 code	O-MBFM-P2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	75 W
Maximum power dissipation(Abs)	75 W
Maximum pulsed drain current (IDM)	24 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	PIN/PEG
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Base Number Matches	1

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