Advance Technical Information
PolarHV
TM
HiPerFET
N-Channel Power MOSFET
Phase leg Topology
FMM22-06PF
3
3
5
5
4
4
V
DSS
I
D25
T1
R
DS(on)
t
rr(max)
=
=
≤
≤
600V
12A
350mΩ
Ω
200ns
T2
1
1
2
2
ISOPLUS i4-Pak
TM
Symbol
T
J
T
JM
T
stg
V
ISOLD
T
L
T
SOLD
F
C
Test Conditions
Maximum Ratings
-55 ... +150
150
-55 ... +150
°C
°C
°C
~V
°C
°C
N/lb.
1
Isolated Tab
50/60H
Z
, RMS, t = 1min, leads-to-tab
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
Mounting force
2500
300
260
20..120 / 4.5..27
5
Features
Silicon chip on Direct-Copper Bond
(DCB) substrate
- UL recognized package
- Isolated mounting surface
- 2500V electrical isolation
Avalanche rated
Low Q
G
Low Drain-to-Tab capacitance
Low package inductance
Advantages
Low gate drive requirement
High power density
Fast intrinsic rectifier
Low drain to ground capacitance
Fast switching
Applications
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
dV/dt
P
D
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GS
= 1MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, V
DD
≤
V
DSS
, T
J
≤
150°C
T
C
= 25°C
Maximum Ratings
600
600
±
30
±
40
12
66
22
1.0
10
130
V
V
V
V
A
A
A
J
V/ns
W
Symbol
C
P
d
S
,d
A
d
S
,d
A
Weight
Test Conditions
Coupling capacitance between shorted
pins and mounting tab in the case
pin - pin
pin - backside metal
Characteristic Values
Min.
Typ.
Max.
40
1.7
5.5
9
pF
mm
mm
g
DC and AC motor drives
UPS, solar and wind power inverters
Synchronous rectifiers
Multi-phase DC to DC converters
Industrial battery chargers
Switching power supplies
© 2008 IXYS CORPORATION, All rights reserved
DS100038(09/08)
FMM22-06PF
Symbol
Test Conditions
2
(T
J
= 25°C unless otherwise specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
t
rr
Q
RM
Test Conditions
3
V
GS
= 0V
Repetitive, pulse width limited by T
JM
I
F
= 22A, V
GS
= 0V, Note 1
I
F
= 22A, -di/dt = 100A/μs
V
R
= 100V, V
GS
= 0V
1.0
0.15
V
GS
= 10V, V
DS
= 0.5
V
DSS
, I
D
= 11A
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 V
DSS
, I
D
= 11A
R
G
= 4Ω (External)
V
GS
= 0V, V
DS
= 25V, f = 1MHz
V
GS
= 0V, I
D
= 250μA
V
DS
= V
GS
, I
D
= 1mA
V
GS
=
±30
V, V
DS
= 0V
V
DS
= V
DSS
V
GS
= 0V
V
GS
= 10V, I
D
= 11A, Note 1
V
DS
= 20V, I
D
= 11A, Note 1
15
20
3600
305
38
20
20
60
23
58
20
22
T
J
= 125°C
Characteristic Values
Min.
Typ.
Max.
600
3.0
5.0
±
100
V
V
nA
ISOPLUS i4-Pak
TM
Outline
25
μA
250
μA
350 mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.95
°C/W
°C/W
Ref: IXYS CO 0077 R0
Characteristic Values
T
J
= 25°C unless otherwise specified)
Min. Typ.
Max.
12
66
1.5
200
A
A
V
ns
μC
Note 1: Pulse test, t
≤
300μs, duty cycle, d
≤
2 %.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experience,
and constitute a "considered reflection" of the anticipated objective result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
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