CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Current is limited by the package capability.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
TEST CONDITIONS
I
D
= 1mA, V
GS
= 0V
V
GS
= V
DS
,
I
D
= 1mA
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
MIN
100
-
1.5
0.5
-
-
-
TYP
-
-
-
-
-
-
-
MAX
-
5.0
4.0
-
25
250
100
200
1.84
-
-
-
-
-
-
V
GS
= 0V to 20V
V
GS
= 0V to 12V
V
GS
= 0V to 2V
V
DD
= 50V,
I
D
= 25A
-
-
-
-
-
I
D
= 25A, V
DS
= 15V
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
-
-
-
-
-
0.045
-
-
-
-
-
-
130
-
23
67
7
3250
1060
370
-
-
0.070
0.105
140
310
170
70
240
160
8.1
31
88
-
-
-
-
1.00
48
UNITS
V
V
V
V
µA
µA
nA
nA
V
Ω
Ω
ns
ns
ns
ns
nC
nC
nC
nC
nC
V
pF
pF
pF
o
C/W
o
C/W
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
I
DSS
I
GSS
V
DS(ON)
r
DS(ON)12
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
Q
g(12)
Q
g(TH)
Q
gs
Q
gd
V
(PLATEAU)
C
ISS
C
OSS
C
RSS
R
θ
JC
R
θ
JA
V
DS
= 80V,
V
GS
= 0V
V
GS
=
±20V
V
GS
= 12V, I
D
= 25A
I
D
= 20A,
V
GS
= 12V
Gate to Source Leakage Current
Drain to Source On-State Voltage
Drain to Source On Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate Charge at 12V
Threshold Gate Charge
Gate Charge Source
Gate Charge Drain
Plateau Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
V
DD
= 50V, I
D
= 25A,
R
L
= 2.0Ω, V
GS
= 12V,
R
GS
= 2.35Ω
3-102
FSF150D, FSF150R
Source to Drain Diode Specifications
PARAMETER
Forward Voltage
Reverse Recovery Time
SYMBOL
V
SD
t
rr
TEST CONDITIONS
I
SD
= 25A
I
SD
= 25A, dI
SD
/dt = 100A/µs
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
(Note 3)
(Note 3)
(Notes 2, 3)
(Note 3)
(Notes 1, 3)
(Notes 1, 3)
BV
DSS
V
GS(TH)
I
GSS
I
DSS
V
DS(ON)
r
DS(ON)12
TEST CONDITIONS
V
GS
= 0, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±20V,
V
DS
= 0V
V
GS
= 0, V
DS
= 80V
V
GS
= 12V, I
D
= 25A
V
GS
= 12V, I
D
= 20A
MIN
100
1.5
-
-
-
-
MAX
-
4.0
100
25
1.84
0.070
UNITS
V
V
nA
µA
V
Ω
MIN
0.6
-
TYP
-
-
MAX
1.8
400
UNITS
V
ns
Electrical Specifications up to 100K RAD
PARAMETER
Drain to Source Breakdown Volts
Gate to Source Threshold Volts
Gate to Body Leakage
Zero Gate Leakage
Drain to Source On-State Volts
Drain to Source On Resistance
NOTES:
2. Pulse test, 300µs Max.
3. Absolute value.
4. Insitu Gamma bias must be sampled for both V
GS
= 12V, V
DS
= 0V and V
GS
= 0V, V
DS
= 80% BV
DSS
.
Single Event Effects (SEB, SEGR)
(Note 4)
ENVIRONMENT
(NOTE 5)
ION
SPECIES
Ni
Br
Br
Br
NOTES:
5. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
6. Fluence = 1E5 ions/cm
2
(typical), T = 25
o
C.
7. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
TYPICAL LET
(MeV/mg/cm)
26
37
37
37
TYPICAL
RANGE (µ)
43
36
36
36
APPLIED
V
GS
BIAS
(V)
-20
-10
-15
-20
(NOTE 6)
MAXIMUM
V
DS
BIAS
(V)
100
100
80
50
TEST
Single Event Effects Safe Operating
Area
SYMBOL
SEESOA
Typical Performance Curves
120
100
80
V
DS
(V)
60
40
20
0
0
TEMP = 25
o
C
-5
-10
-15
V
GS
(V)
Unless Otherwise Specified
LET = 26MeV/mg/cm
2
, RANGE = 43µ
LET = 37MeV/mg/cm
2
, RANGE = 36µ
FLUENCE = 1E5 IONS/cm
2
(TYPICAL)
LIMITING INDUCTANCE (HENRY)
1E-3
1E-4
ILM = 10A
30A
1E-5
100A
300A
1E-6
1E-7
-20
-25
10
30
100
DRAIN SUPPLY (V)
300
1000
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT
GAMMA DOT CURRENT TO I
AS
3-103
FSF150D, FSF150R
Typical Performance Curves
40
Unless Otherwise Specified
(Continued)
100
T
C
= 25
o
C
I
D
, DRAIN CURRENT (A)
30
I
D
, DRAIN (A)
100µs
1ms
10
20
10ms
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
100ms
10
0
-50
0
50
100
150
0.1
T
C
, CASE TEMPERATURE (
o
C)
1
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
100
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
2.5
PULSE DURATION = 250ms, V
GS
= 12V, I
D
= 20A
2.0
NORMALIZED r
DS(ON)
12V
Q
G
1.5
Q
GS
V
G
Q
GD
1.0
0.5
CHARGE
0.0
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 5. BASIC GATE CHARGE WAVEFORM
FIGURE 6. NORMALIZED r
DS(ON)
vs JUNCTION TEMPERATURE
10
THERMAL RESPONSE (Z
θ
JC
)
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
NORMALIZED
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
+ T
C
0.001
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t, RECTANGULAR PULSE DURATION (s)
FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
As shown in the picture above, if we want to make a 50 ohm impedance line, do we need to make both the lighted sections? Or just the bottom section?If I make both sections and connect them with a 0 oh...
[size=4]【Meet friends by disassembling】Disassembling the Xiaomi Bluetooth Mini (perfectly revived)[/size] [size=4]The Xiaomi Bluetooth Mini has been silent recently, so let’s disassemble it and see wh...
I would like to ask how to access the variables stored in eeprom. I am using at24c02. 1. Can I define it as xdata directly and then access and modify it in the MCU program? 2. Do I need to overwrite t...
My computer host software communicates with the LPC chip via USB. The data volume is a bit large, tens of thousands of bits per second. The USB connection fails with a little interference. I need an e...
RF/Wirelessly
京公网安备 11010802033920号
EEWORLD
