DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5337
NPN SILICON RF TRANSISTOR FOR
HIGH-FREQUENCY LOW DISTORTION AMPLIFIER
4-PIN POWER MINIMOLD
FEATURES
• Low distortion: IM
2
= 59.0 dB TYP., IM
3
= 82.0 dB TYP. @ V
CE
= 10 V, I
C
= 50 mA
• Low noise
NF = 1.5 dB TYP. @ V
CE
= 10 V, I
C
= 50 mA, f = 500 MHz
NF = 2.0 dB TYP. @ V
CE
= 10 V, I
C
= 50 mA, f = 1 GHz
• 4-pin power minimold package with improved gain from the 2SC4536
ORDERING INFORMATION
Part Number
2SC5337
2SC5337-T1
Quantity
25 pcs (Non reel)
1 kpcs/reel
• Magazine case
• 12 mm wide embossed taping
• Collector face the perforation side of the tape
Supplying Form
Remark
To order evaluation samples, consult your NEC sales representative.
Unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
°
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
30
15
3.0
250
2.0
150
−65
to +150
Unit
V
V
V
mA
W
°C
°C
T
j
T
stg
2
Note
Mounted on 16 cm
×
0.7 mm (t) ceramic substrate (Copper plating)
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P10939EJ2V1DS00 (2nd edition)
Date Published September 2001 NS CP(K)
Printed in Japan
The mark
•
shows major revised points.
©
1996, 2001
2SC5337
ELECTRICAL CHARACTERISTICS (T
A
= +25°C)
°
Parameter
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Insertion Power Gain
Noise Figure (1)
Noise Figure (2)
2nd Order Intermoduration
Distortion
3rd Order Intermoduration Distortion
S
21e
2
NF
NF
Note 2
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
I
CBO
I
EBO
h
FE
Note 1
V
CB
= 20 V, I
E
= 0 mA
V
BE
= 2 V, I
C
= 0 mA
V
CE
= 10 V, I
C
= 50 mA
–
–
40
0.01
0.03
120
5.0
5.0
200
µ
A
µ
A
–
V
CE
= 10 V, I
C
= 50 mA, f = 1 GHz
V
CE
= 10 V, I
C
= 50 mA, f = 500 MHz
V
CE
= 10 V, I
C
= 50 mA, f = 1 GHz
V
CE
= 10 V, I
C
= 50 mA, R
S
= R
L
= 75
Ω,
V
in
= 105 dB
µ
V/75
Ω,
f
1
= 190 MHz,
f
2
= 90 MHz, f = f
1
−
f
2
V
CE
= 10 V, I
C
= 50 mA, R
S
= R
L
= 75
Ω,
V
in
= 105 dB
µ
V/75
Ω,
f
1
= 190 MHz,
f
2
= 200 MHz, f = 2
×
f
1
−
f
2
7.0
–
–
–
8.3
1.5
2.0
59.0
–
3.5
3.5
–
dB
dB
dB
dB
Note 2
IM
2
IM
3
–
82.0
–
dB
Notes 1.
Pulse measurement: PW
≤
350
µ
s, Duty Cycle
≤
2%
2.
R
S
= R
L
= 50
Ω,
tuned
h
FE
CLASSIFICATION
Rank
Marking
h
FE
Value
QQ
QQ
40 to 80
QR
QR
60 to 120
QS
QS
100 to 200
2
Data Sheet P10939EJ2V1DS
2SC5337
TYPICAL CHARACTERISTICS (Unless otherwise specified, T
A
= +25°C)
°
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Total Power Dissipation P
tot
(W)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
Reverse Transfer Capacitance C
re
(pF)
5.0
f = 1 MHz
3.0
2.0
2.0
Mounted on Ceramic Substrate
(16 cm
2
×
0.7 mm (t) )
1.0
1.0
0.5
0.3
1
3
5
10
20
30
0
50
100
150
Ambient Temperature T
A
(˚C)
Collector to Base Voltage V
CB
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
I
B
= 0.6 mA
100
Collector Current I
C
(mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
300
V
CE
= 10 V
DC Current Gain h
FE
0.5 mA
0.4 mA
80
60
40
20
0.3 mA
100
50
0.2 mA
0.1 mA
0
10
Collector to Emitter Voltage V
CE
(V)
20
10
0.1
1
10
100
1 000
Collector Current I
C
(mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
10
Gain Bandwidth Product f
T
(GHz)
Insertion Power Gain |S
21e
|
2
(dB)
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
V
CE
= 10 V
f = 1 GHz
10
5
3
2
1
0.5
0.3
10
30
V
CE
= 10 V
f = 1 GHz
50 70 100
5
0
10
30
50 70 100
Collector Current I
C
(mA)
Collector Current I
C
(mA)
Data Sheet P10939EJ2V1DS
3
2SC5337
INSERTION POWER GAIN, MAG
vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
NOISE FIGURE vs.
COLLECTOR CURRENT
7
V
CE
= 10 V
f = 1 GHz
V
CE
= 10 V
I
C
= 50 mA
Noise Figure NF (dB)
6
5
4
3
2
1
|S
21e
|
20
2
MAG
10
0
0.2
0.4
0.6 0.8 1.0 1.4
2.0
0
5
10
20
50
100
Frequency f (GHz)
Collector Current I
C
(mA)
3rd Order Intermodulation Distortion IM
3
(dB)
2nd Order Intermodulation Distortion (+) IM
2+
(dB)
2nd Order Intermodulation Distortion (–) IM
2–
(dB)
IM
3
, IM
2+
, IM
2–
vs.
COLLECTOR CURRENT
80
70
60
IM
2+
50
40
30
10
IM
2–
IM
3
: V
in
= 110 dB
µ
V/75
Ω
2 tone each
f = 2 × 190 – 200 MHz
IM
2+
: V
in
= 105 dB
µ
V/75
Ω
2 tone each
f = 90 + 100 MHz
IM
2–
: V
in
= 105 dB
µ
V/75
Ω
2 tone each
f = 190 – 90 MHz
V
CE
= 10 V
IM
3
50
100
300
Collector Current I
C
(mA)
Remark
The graphs indicate nominal characteristics.
4
Data Sheet P10939EJ2V1DS
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