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FQU3N60C

Description
Small Signal Field-Effect Transistor
CategoryDiscrete semiconductor    The transistor   
File Size1020KB,9 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric Compare View All

FQU3N60C Overview

Small Signal Field-Effect Transistor

FQU3N60C Parametric

Parameter NameAttribute value
MakerFairchild
package instruction,
Reach Compliance Codeunknown
Base Number Matches1
FQD3N60C / FQU3N60C N-Channel
QFET
®
MOSFET
April 2013
FQD3N60C / FQU3N60C
600 V, 2.4 A, 3.4 Ω
Features
• 2.4 A, 600 V, R
DS(on)
= 3.4
(Max.)
@ V
GS
= 10 V,
I
D
= 1.2 A
• Low
Gate Charge
(Typ. 10.5 nC)
• Low Crss (Typ. 5 pF)
• 100%
Avalanche Tested
N-Channel
QFET
®
MOSFET
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor®’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance and
high avalanche energy strength. These devices are suitable for
switched mode power supplies, active power factor correction
(PFC), and electronic lamp ballas
D
G
S
G
D
D
S
G
D-PAK
I-PAK
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
(Note 1)
Parameter
FQD3N60C / FQU3N60C
600
2.4
1.5
9.6
±
30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
150
2.4
5.0
4.5
50
0.4
-55 to +150
300
Thermal Characteristics
Symbol
R
θJC
R
θJA*
R
θJA
Parameter
Thermal Resistance, Junction-to-Case,
Max.
Thermal Resistance, Junction-to-Ambient*
Thermal Resistance, Junction-to-Ambient,
Max.
FQD3N60C / FQU3N60C
2.5
50
110
Unit
°C/W
°C/W
°C/W
* When mounted on the minimum pad size recommended (PCB Mount)
©2006 Fairchild Semiconductor Corporation
FQD3N60C / FQU3N60C Rev.
C0
1
www.fairchildsemi.com

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Maker Fairchild
Reach Compliance Code unknown
Base Number Matches 1
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