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TG-5006CG-28L52.0000MHZ

Description
Clipped Sine Output Oscillator,
CategoryPassive components    oscillator   
File Size259KB,2 Pages
ManufacturerSeiko Epson Corporation
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TG-5006CG-28L52.0000MHZ Overview

Clipped Sine Output Oscillator,

TG-5006CG-28L52.0000MHZ Parametric

Parameter NameAttribute value
MakerSeiko Epson Corporation
Reach Compliance Codeunknown
Oscillator typeCLIPPED SINE
Base Number Matches1
Crystal oscillator
Product Number (Please contact us)
X1G004211xxxx00
TCXO/VC-TCXO
MINIATURE SIZE LOW PROFILE
HIGH STABILITY
TG - 5006CG
Frequency
range
:
13 MHz to 52 MHz
Supply
voltage
:
1.8 V / 2.8 V
Frequency
/ temperature characteristics
:
0.5
× 10
-6
Max. or
2.0
× 10
-6
Max.
External
dimensions
:
2.5 × 2.0 × 0.8 mm
Applications
:
GPS,
Wireless communication devices
(CDMA, WCDMA, LTE, WiMAX, other)
Features
:
High stability
:
Low supply voltage (1.8V)
Actual size
Specifications (characteristics)
Item
Output frequency range
Supply voltage
Storage temperature
Operating temperature
Frequency tolerance
Frequency/temperature characteristics
Frequency/load coefficient
Frequency/voltage coefficient
Frequency aging
Current consumption
Input resistance
Frequency control range
Frequency change polarity
Symmetry
Output voltage
Symbol
Specifications
VC-TCXO
TCXO
13.000 MHz to 52.000 MHz
16.367667 MHz, 16.368 MHz, 16.369 MHz,
19.2 MHz, 26 MHz and 38.4 MHz
1.8 V
0.1
V / 2.8 V
0.14
V (Range :1.7 V to 3.3 V)
-40 °C to +90 °C
-30
C
to +85
C
-6
2.0 
10 Max.
-6
0.5 
10 Max. / -30
C
to +85
C
-6
2.0 
10 Max. / -30
C
to +85
C
-6
2.0 
10 Max. / -40
C
to +85
C
(Option)
-6
0.2 
10 Max.
-6
0.2 
10 Max.
±1.0
10
-6
Max.
±1.5
10
-6
Max.
1.5 mA Max.
2.0 mA Max.
500 k Min.
-
8.0 
10 to
15.0 
10
-6
-6
Conditions / Remarks
f
O
V
CC
T_stg
T_use
f_tol
fo-T
C
fo-Load
fo-V
CC
f_age
I
CC
R
in
f_cont
Standard frequency
Storage as single product.
After reflow, +25
C
High stability version for GPS
Standard stability version
Customized product
10 k // 10 pF
10
%
V
CC
=1.8 V
0.1
V or 2.8 V
0.14
V
+25
C,
First year, 13 MHz≦f
0
≦40
MHz
+25
C,
First year, 40 MHz<f
0
≦52
MHz
13 MHz≦f
0
≦26
MHz
26 MHz<f
0
≦52
MHz
V
C-
GND (DC )
V
C
=0.9 V
0.6
V (Vcc =1.8 V) or
V
C
=1.4 V
1.0
V (Vcc =2.8 V)
GND level (DC cut)
Peak to Peak
DC cut capacitor = 0.01
F
-
-
-
Positive polarity
SYM
40 % to 60 %
V
pp
0.8 V Min.
Load_R
10 k
Output load condition
Load_C
10 pF
*
Note : Please contact us for requirements not listed in this specification.
External dimensions
(Unit:mm)
2.5±0.2
Footprint (Recommended)
(Unit:mm)
2.0±0.2
C
(ex. 0.01 µF)
Resist
0.8
#4
(0.46)
#3
1.0
1.4
#1
#2
(0.7)
0.6±0.1
Pin map
Pin
1
2
3
4
Connection
VC-TCXO
TCXO
V
C
N.C.
GND
OUT
V
CC
#1
2.1
#2
To maintain stable operation, provide a 0.01uF to
0.1uF by-pass capacitor at a location as near as
possible to the power source terminal of the crystal
product (between Vcc - GND).
0.8±0.1
C0.2
#4
1.5±0.1
(0.5)
#3

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Reach Compliance Code unknown unknow
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