Gate Drive Optocoupler,
High Noise Immunity,
1.0 A Output Current
FOD3150
Description
The FOD3150 is a 1.0 A Output Current Gate Drive Optocoupler,
capable of driving most 800 V / 20 A IGBT / MOSFET. It is ideally
suited for fast switching driving of power IGBT and MOSFETs used
in motor control inverter applications, and high performance power
system.
It utilizes ON Semiconductor patented coplanar packaging
technology, Optoplanar
®
, and optimized IC design to achieve high
noise immunity, characterized by high common mode rejection.
It consists of a gallium aluminum arsenide (AlGaAs) light emitting
diode optically coupled to an integrated circuit with a high−speed
driver for push−pull MOSFET output stage.
Features
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PDIP8 GW
CASE 709AD
PDIP8 GW
CASE 709AC
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High Noise Immunity characterized by 20 kV/ms minimum Common
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Mode Rejection
Use of P−channel MOSFETs at Output Stage Enables Output Voltage
Swing close to the Supply Rail
Wide Supply Voltage Range from 15 V to 30 V
Fast Switching Speed
♦
500 ns maximum Propagation Delay
♦
300 ns maximum Pulse Width Distortion
Under Voltage LockOut (UVLO) with Hysteresis
Extended Industrial Temperate Range, −40°C to 100°C Temperature
Range
Safety and Regulatory Approvals
♦
UL1577, 5000 V
RMS
for 1 minute
♦
DIN EN/IEC60747−5−5
>8.0 mm Clearance and Creepage Distance (Option ‘T’)
This is a Pb−Free Device
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PDIP8 6.6x3.81, 2.54P
CASE 646BW
PDIP8 9.655x6.6, 2.54P
CASE 646CQ
FUNCTIONAL BLOCK DIAGRAM
NC
1
8 V
DD
ANODE
2
7 V
O2
CATHODE
3
6 V
O1
NC
4
5 V
SS
Applications
Industrial Inverter
Uninterruptible Power Supply
Induction Heating
Isolated IGBT/Power MOSFET Gate Drive
Note: A 0.1
mF
bypass capacitor must be
connected between pins 5 and 8.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 12 of this data sheet.
Related Resources
•
FOD3120, 2.5 A Output Current, Gate Drive Optocoupler Datasheet
•
www.onsemi.com/products/opto/
©
Semiconductor Components Industries, LLC, 2018
1
May, 2020 − Rev. 4
Publication Order Number:
FOD3150/D
FOD3150
Table 1. TRUTH TABLE
LED
Off
On
On
On
V
DD
– V
SS
“Positive Going” (Turn−on)
0 V to 30 V
0 V to 11 V
11 V to 14 V
14 V to 30 V
V
DD
– V
SS
“Negative Going” (Turn−off)
0 V to 30 V
0 V to 9.7 V
9.7 V to 12.7 V
12.7 V to 30 V
V
O
Low
Low
Transition
High
Table 2. PIN DEFINITIONS
Pin #
1
2
3
4
5
6
7
8
Name
NC
Anode
Cathode
NC
V
SS
V
O2
V
O1
V
DD
Not Connected
LED Anode
LED Cathode
Not Connected
Negative Supply Voltage
Output Voltage 2 (internally connected to V
O1
)
Output Voltage 1
Positive Supply Voltage
Description
Table 3. SAFETY AND INSULATION RATINGS
As per IEC 60747−5−2. This optocoupler is suitable for “safe electrical insulation” only within the safety limit data.
Compliance with the safety ratings shall be ensured by means of protective circuits.
Symbol
Parameter
Installation Classifications per DIN VDE 0110/1.89 Table 1
For Rated Main Voltage < 150 Vrms
For Rated Main Voltage < 300 Vrms
For Rated Main Voltage < 450 Vrms
For Rated Main Voltage < 600 Vrms
Climatic Classification
Pollution Degree (DIN VDE 0110/1.89)
CTI
V
PR
Comparative Tracking Index
Input to Output Test Voltage, Method b,
V
IORM
x 1.875 = V
PR
, 100% Production Test with tm = 1 s,
Partial Discharge < 5 pC
Input to Output Test Voltage, Method a,
V
IORM
x 1.5 = V
PR
, Type and Sample Test with tm = 60 s,
Partial Discharge < 5 pC
V
IORM
V
IOTM
Max Working Insulation Voltage
Highest Allowable Over Voltage
External Creepage
External Clearance
External Clearance (for Option T−0.4” Lead Spacing)
Insulation Thickness
T
Case
I
S,INPUT
P
S,OUTPUT
R
IO
Safety Limit Values – Maximum Values Allowed in the Event of a Failure
Case Temperature
Input Current
Output Power (Duty Factor
≤
2.7 %)
Insulation Resistance at T
S
, V
IO
= 500 V
175
1669
Min.
Typ.
I–IV
I–IV
I–III
I–III
55/100/21
2
Max.
Unit
1335
890
6000
8
7.4
10.16
0.5
150
25
250
10
9
V
peak
V
peak
mm
mm
mm
mm
°C
mA
mW
W
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FOD3150
Table 4. ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified.)
Symbol
T
STG
T
OPR
T
J
T
SOL
I
F(AVG)
V
R
I
O(PEAK)
V
DD
– V
SS
V
O(PEAK)
t
R(IN)
, t
F(IN)
PD
I
PD
O
Storage Temperature
Operating Temperature
Junction Temperature
Lead Wave Solder Temperature
(refer to page 12 for reflow solder profile)
Average Input Current
Reverse Input Voltage
Peak Output Current
(1)
Supply Voltage
Peak Output Voltage
Input Signal Rise and Fall Time
Input Power Dissipation
(2) (4)
Output Power Dissipation
(3) (4)
Parameter
Value
−55 to +125
−40 to +100
−40 to +125
260 for 10 sec
25
5
1.5
0 to 35
0 to V
DD
500
45
250
Units
°C
°C
°C
°C
mA
V
A
V
V
ns
mW
mW
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Maximum pulse width = 10
ms,
maximum duty cycle = 0.2 %.
2. Derate linearly above 87°C, free air temperature at a rate of 0.77 mW/°C.
3. No derating required across temperature range.
4. Functional operation under these conditions is not implied. Permanent damage may occur if the device is subjected to conditions outside
these ratings.
Table 5. RECOMMENDED OPERATING CONDITIONS
Symbol
T
A
V
DD
– V
SS
I
F(ON)
V
F(OFF)
Parameter
Ambient Operating Temperature
Power Supply
Input Current (ON)
Input Voltage (OFF)
Value
−40 to +100
15 to 30
7 to 16
0 to 0.8
Units
°C
V
mA
V
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
Table 6. ISOLATION CHARACTERISTICS
Apply over all recommended conditions, typical value is measured at T
A
= 25°C
Symbol
V
ISO
R
ISO
C
ISO
Parameter
Input−Output Isolation Voltage
Isolation Resistance
Isolation Capacitance
Conditions
T
A
= 25°C, R.H.< 50 %, t = 1.0 minute,
I
I−O
≤
10
mA,
50 Hz
(5) (6)
V
I−O
= 500 V
(5)
V
I−O
= 0 V, Frequency = 1.0 MHz
(5)
Min.
5000
10
11
1
Typ.
Max.
Units
V
RMS
W
pF
5. Device is considered a two terminal device: pins 2 and 3 are shorted together and pins 5, 6, 7 and 8 are shorted together.
6. 5,000 V
RMS
for 1 minute duration is equivalent to 6,000 VAC
RMS
for 1 second duration.
Table 7. ELECTRICAL CHARACTERISTICS
Apply over all recommended conditions, typical value is measured at V
DD
= 30 V, V
SS
= Ground, T
A
= 25°C unless otherwise specified.
Symbol
V
F
D(V
F
/ T
A
)
Parameter
Input Forward Voltage
Temperature Coefficient of Forward
Voltage
Input Reverse Breakdown Voltage
I
R
= 10
mA
5
Conditions
I
F
= 10 mA
Min.
1.2
Typ.
1.5
−1.8
Max.
1.8
Units
V
mV/°C
BV
R
V
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FOD3150
Table 7. ELECTRICAL CHARACTERISTICS
(continued)
Apply over all recommended conditions, typical value is measured at V
DD
= 30 V, V
SS
= Ground, T
A
= 25°C unless otherwise specified.
Symbol
C
IN
I
OH
Parameter
Input Capacitance
High Level Output Current
(7)
Conditions
f = 1 MHz, V
F
= 0 V
V
O
= V
DD
– 0.75 V
V
O
= V
DD
– 4 V
I
OL
Low Level Output Current
(7)
V
O
= V
DD
+ 0.75 V
V
O
= V
DD
+ 4 V
V
OH
High Level Output Voltage
I
F
= 10 mA, I
O
= −1 A
I
F
= 10 mA, I
O
= −100 mA
V
OL
Low Level Output Voltage
I
F
= 0 mA, I
O
= 1 A
I
F
= 0 mA, I
O
= 100 mA
I
DDH
I
DDL
I
FLH
V
FHL
V
UVLO+
V
UVLO–
UVLO
HYS
Under Voltage Lockout Threshold Hys-
teresis
High Level Supply Current
Low Level Supply Current
Threshold Input Current Low to High
Threshold Input Voltage High to Low
Under Voltage Lockout Threshold
V
O
= Open, I
F
= 7 to 16 mA
V
O
= Open, V
F
= 0 to 0.8 V
I
O
= 0 mA, V
O
> 5 V
I
O
= 0 mA, V
O
< 5 V
I
F
= 1 0mA, V
O
> 5 V
I
F
= 10 mA, V
O
< 5 V
0.8
11
9.7
12.7
11.2
1.5
14
12.7
0.2
1.0
0.2
1.0
V
DD
– 4 V
V
DD
– 0.5 V
V
DD
– 6 V
V
DD
– 0.1 V
V
SS
+ 6 V
V
SS
+ 0.1 V
2.8
2.8
2.3
V
SS
+ 4 V
V
SS
+ 0.5 V
5
5
5.0
mA
mA
mA
V
V
V
V
V
V
A
Min.
Typ.
60
Max.
Units
pF
A
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
7. Maximum pulse width = 10
ms,
maximum duty cycle = 0.2 %.
Table 8. SWITCHING CHARACTERISTICS
Apply over all recommended conditions, typical value is measured at V
DD
= 30 V, V
SS
= Ground, T
A
= 25°C unless otherwise specified.
Symbol
t
PHL
t
PLH
PWD
PDD
(Skew)
t
r
t
f
t
UVLO ON
t
UVLO OFF
| CM
H
|
| CM
L
|
Parameter
Propagation Delay Time to Logic Low Output
Propagation Delay Time to Logic High Output
Pulse Width Distortion, | t
PHL
– t
PLH
|
Propagation Delay Difference Between Any
Two Parts or Channels, (t
PHL
– t
PLH
)
(8)
Output Rise Time (10% – 90%)
Output Fall Time (90% – 10%)
UVLO Turn On Delay
UVLO Turn Off Delay
Common Mode Transient Immunity at Output
High
Common Mode Transient Immunity at Output
Low
I
F
= 10 mA , V
O
> 5 V
I
F
= 10 mA , V
O
< 5 V
T
A
= 25°C, V
DD
= 30 V,
I
F
= 7 to 16 mA, V
CM
= 2000 V
(9)
T
A
= 25°C, V
DD
= 30 V, V
F
= 0 V,
V
CM
= 2000 V
(10)
20
−350
Conditions
I
F
= 7 mA to 16 mA,
Rg = 20
W,
Cg = 10 nF,
f = 10 kHz, Duty Cycle = 50 %
Min.
100
100
Typ.
275
255
20
Max.
500
500
300
350
Units
ns
ns
ns
ns
60
60
1.6
0.4
50
ns
ns
ms
ms
kV/ms
20
50
kV/ms
8. The difference between t
PHL
and t
PLH
between any two FOD3150 parts under same test conditions.
9. Common mode transient immunity at output high is the maximum tolerable negative dVcm/dt on the trailing edge of the common mode
impulse signal, Vcm, to assure that the output will remain high (i.e., V
O
> 15.0 V).
10. Common mode transient immunity at output low is the maximum tolerable positive dVcm/dt on the leading edge of the common pulse signal,
Vcm, to assure that the output will remain low (i.e., V
O
< 1.0 V).
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FOD3150
TYPICAL PERFORMANCE CURVES
(V
OH
−V
DD
) − OUTPUT HIGH VOLTAGE DROP (V)
Frequency = 250 Hz
Duty Cycle = 0.1%
I
F
= 7 to 16 mA
V
DD
=15 to 30 V
V
SS
= 0 V
(V
OH
−V
DD
)−HIGH OUTPUT VOLTAGE DROP (V)
0.5
0.00
V
DD
= 15 V to 30 V
V
SS
= 0 V
I
F
= 7 mA to 16 mA
I
O
= −100 mA
0.0
−0.05
−0.5
T
A
=−40_C
−1.0
T
A
=25_C
−1.5
T
A
=100
_
C
−0.10
−0.15
−0.20
−0.25
−2.0
0.00
0.25
0.50
0.75
1.00
1.25
1.50
I
OH
− OUTPUT HIGH CURRENT (A)
−0.30
−40
−20
0
20
40
60
80
100
T
A
−AMBIENT TEMPERATURE (_C)
Figure 1. Output High Voltage Drop vs. Output High
Current
2.0
Frequency = 250 Hz
Duty Cycle = 99.9%
V
F(OFF)
= −3.0 V to 0.8 V
V
DD
= 15 V to 30 V
1.5 V
SS
= 0 V
Figure 2. Output High Voltage Drop vs. Ambient
Temperature
0.25
V
DD
= 15 V to 30 V
V
SS
= 0 V
V
F(OFF)
= −3 V to 0.8 V
I
O
= 100 mA
V
OL
−OUTPUT LOW VOLTAGE (V)
T
A
= 100_C
T
A
=25
_C
V
OL
−OUTPUT LOW VOLTAGE (V)
1.50
0.20
0.15
1.0
0.10
T
A
=−40
_C
0.5
0.05
0.0
0.00
0.25
0.50
0.75
1.00
1.25
0.00
−40
−20
0
20
40
60
80
100
I
OL
−OUTPUT LOW CURRENT (A)
T
A
−AMBIENT TEMPERATURE (
_C)
Figure 3. Output Low Voltage vs. Output Low Current
3.6
V
DD
= 30 V
V
SS
= 0 V
I
F
= 0 mA (for I
DDL
)
I
F
= 10 mA (for I
DDH
)
Figure 4. Output Low Voltage vs. Ambient
Temperature
3.6
I
F
= 10 mA (for I
DDH
)
I
F
= 0 mA (for I
DDL
)
V
SS
=0, T
A
= 25_C
3.2
3.4
I
DD
−SUPPLY CURRENT (mA)
3.2
3.0
I
DDH
2.8
I
DDL
2.6
I
DD
−SUPPLY CURRENT (mA)
2.8
I
DDH
I
DDL
2.4
2.4
2.2
−40
−20
0
20
0
4
60
80
100
2.0
15
20
25
30
T
A
−AMBIENT TEM PERATURE(_C)
V
DD
−SUPPLY VOLTAGE (V)
Figure 5. Supply Current vs. Ambient Temperature
Figure 6. Supply Current vs. Supply Voltage
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