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3MBI150UC-120

Description
Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-39
CategoryDiscrete semiconductor    The transistor   
File Size124KB,5 Pages
ManufacturerFuji Electric Co., Ltd.
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3MBI150UC-120 Overview

Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-39

3MBI150UC-120 Parametric

Parameter NameAttribute value
Parts packaging codeMODULE
package instructionFLANGE MOUNT, R-XUFM-X39
Contacts39
Reach Compliance Codeunknown
Shell connectionISOLATED
Maximum collector current (IC)200 A
Collector-emitter maximum voltage1200 V
ConfigurationCOMMON COLLECTOR, 3 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
JESD-30 codeR-XUFM-X39
Number of components3
Number of terminals39
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)370 ns
Nominal on time (ton)360 ns
Base Number Matches1
3MBI150UC-120
IGBT Module U-Series
Features
· High speed switching
· Voltage drive
· Low inductance module structure
· With shunt resistors
1200V / 150A 3 in one-package
Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
· Industrial machines, such as Welding machines
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item
Collector-Emitter voltage
Gate-Emitter voltaga
Collector current
Symbol
V
CES
V
GES
I
C
I
C
p
-I
C
-I
C
pulse
Collector Power Dissipation
Junction temperature
Storage temperature
Isolation voltage between terminal and copper base *1
Screw Torque
Mounting *
2
P
C
T
j
T
stg
V
iso
1 device
Conditions
Rating
1200
±20
200
150
400
300
150
300
735
+150
-40 to +125
2500
3.5
W
°C
VAC
N·m
Unit
V
V
A
Continuous Tc=25°C
1ms
Tc=80°C
Tc=25°C
Tc=80°C
AC:1min.
*
1 :
All terminals should be connected together when isolation test will be done.
*
2 :
Recommendable value : 2.5 to 3.5 N·m(M5)
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Symbols
I
CES
I
GES
V
GE(th)
V
CE(sat)
(chip)
C
ies
t
on
t
r
t
r(i)
Turn-off time
Forward on voltage
Reverse recovery time
Lead resistance, terminal-chip*3
Shunt resistance
t
off
t
f
V
F
(chip)
t
rr
R lead
R shunt
Conditions
V
GE
=0V, V
CE
=1200V
V
CE
=0V, V
GE
=±20V
V
CE
=20V, I
C
=150mA
V
GE
=15V, I
C
=150A Tj=25°C
Tj=125°C
V
CE
=10V, V
GE
=0V, f=1MHz
V
CC
=600V
I
C
=150A
V
GE
=±15V
R
G
=2.2
V
GE
=0V
I
F
=150A
Tj=25°C
Tj=125°C
Characteristics
Min.
Typ.
4.5
6.5
1.75
2.00
17
0.36
0.21
0.03
0.37
0.07
1.60
1.70
5.1
2.4
Unit
Max.
1.0
200
8.5
2.10
1.20
0.60
1.00
0.30
1.90
0.35
mA
nA
V
V
nF
µs
V
µs
mΩ
I
F
=150A
Without shunt resistance
Resistance of R1 to R6 *4
*3: Biggest internal terminal resistance among arm.
*4 R1 to R2 is shown in equivalent circuit (p5)
Thermal resistance characteristics
Items
Thermal resistance
Contact Thermal resistance
Symbols
Rth(j-c)
Rth(j-c)
Rth(c-f)*
5
Conditions
IGBT
FWD
With thermal compound
Characteristics
Min.
Typ.
0.05
Unit
Max.
0.17
0.28
°C/W
°C/W
°C/W
*
5
: This is the value which is defined mounting on the additional cooling fin with thermal compound.
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