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5962-8952404YX

Description
Standard SRAM, 64KX4, 35ns, CMOS, CQCC28, CERAMIC, LCC-28
Categorystorage    storage   
File Size155KB,11 Pages
ManufacturerMicross
Websitehttps://www.micross.com
Download Datasheet Parametric View All

5962-8952404YX Overview

Standard SRAM, 64KX4, 35ns, CMOS, CQCC28, CERAMIC, LCC-28

5962-8952404YX Parametric

Parameter NameAttribute value
Parts packaging codeQLCC
package instructionQCCN,
Contacts28
Reach Compliance Codecompliant
ECCN code3A001.A.2.C
Maximum access time35 ns
JESD-30 codeR-CQCC-N28
JESD-609 codee4
length13.97 mm
memory density262144 bit
Memory IC TypeSTANDARD SRAM
memory width4
Number of functions1
Number of terminals28
word count65536 words
character code64000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize64KX4
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeQCCN
Package shapeRECTANGULAR
Package formCHIP CARRIER
Parallel/SerialPARALLEL
Certification statusNot Qualified
Filter levelMIL-STD-883
Maximum seat height3.048 mm
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelMILITARY
Terminal surfacePALLADIUM GOLD
Terminal formNO LEAD
Terminal pitch1.27 mm
Terminal locationQUAD
width8.89 mm
Base Number Matches1
SRAM
MT5C2565
64K x 4 SRAM
SRAM MEMORY ARRAY
AVAILABLE AS MILITARY
SPECIFICATIONS
• SMD 5962-89524
• MIL-STD-883
PIN ASSIGNMENT
(Top View)
FEATURES
High Speed: 12, 15, 20, 25, 35, and 45ns
Battery Backup: 2V data retention
Low power standby
High-performance, low-power, CMOS double-metal
process
• Single +5V (+10%) Power Supply
• Easy memory expansion with CE\
• All inputs and outputs are TTL compatible
NC
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
CE\
OE\
Vss
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
Vcc
A15
A14
A13
A12
A11
A10
NC
NC
DQ4
DQ3
DQ2
DQ1
WE\
A1
A0
NC
Vcc
NC
3 2 1 28 27
A2
A3
A4
A5
A6
A7
A8
A9
CE\
4
5
6
7
8
9
10
11
12
26
25
24
23
22
21
20
19
18
28-Pin DIP (C)
(300 MIL)
28-Pin LCC (EC)
A15
A14
A13
A12
A11
A10
DQ4
DQ3
DQ2
13 14 15 16 17
DQ1
WE\
NC
Vss
OE\
OPTIONS
• Timing
15ns access
20ns access
25ns access
35ns access
45ns access
55ns access
70ns access
• Package(s)
Ceramic DIP (300 mil)
Ceramic LCC
MARKING
-15
-20
-25
-35
-45
-55*
-70*
GENERAL DESCRIPTION
The Micross Components SRAM family employs
high-speed, low-power CMOS designs using a four-transistor
memory cell. Micross Components SRAMs are fabricated us-
ing double-layer metal, double-layer polysilicon technology.
For flexibility in high-speed memory applications,
Micross Components offers chip enable (CE\) and output enable
(OE\) capability. These enhancements can place the outputs
in High-Z for additional flexibility in system design. Writing
to these devices is accomplished when write enable (WE\) and
CE\ inputs are both LOW. Reading is accomplished when WE\
remains HIGH and CE\ and OE\ go LOW. The device offers a
reduced power standby mode when disabled. This allows sys-
tem designs to achieve low standby power requirements.
The “L” version provides an approximate 50 percent
reduction in CMOS standby current (I
SBC2
) over the standard
version.
All devices operate from a single +5V power supply
and all inputs and outputs are fully TTL compatible.
C
EC
No.108
No. 204
• Operating Temperature Ranges
Industrial (-40
o
C to +85
o
C)
IT
o
o
XT
Military (-55 C to +125 C)
• 2V data retention/low power
L
*Electrical characteristics identical to those provided for the 45ns
access devices.
For more products and information
please visit our web site at
www.micross.com
MT5C2565
Rev. 1.7 01/10
Micross Components reserves the right to change products or specifications without notice.
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