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F3L80R12W1H3B11BOMA1

Description
Insulated Gate Bipolar Transistor
CategoryDiscrete semiconductor    The transistor   
File Size1MB,14 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

F3L80R12W1H3B11BOMA1 Overview

Insulated Gate Bipolar Transistor

F3L80R12W1H3B11BOMA1 Parametric

Parameter NameAttribute value
MakerInfineon
package instruction,
Reach Compliance Codecompliant
Base Number Matches1
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L80R12W1H3_B11
EasyPACK模块采用第二类中点钳½拓扑带有pressfit压接管脚和温度检测NTC
EasyPACKmodulewithactiveNeutralPointClamp2topologyandPressFIT/NTC
初步数据/PreliminaryData
J
V
CES
= 1200V
I
C nom
= 80A / I
CRM
= 160A
典型应用
三电平应用
太阳½应用
电气特性
高速IGBTH3
½电感设计
½开关损耗
thinQ
H
碳化硅肖特基二极管600V
机械特性
½热阻的Al
2
O
3
衬底
紧凑型设计
PressFIT压接技术
集成的安装夹½安装坚固
TypicalApplications
• 3-Level-Applications
• SolarApplications
ElectricalFeatures
• HighSpeedIGBTH3
• Lowinductivedesign
• LowSwitchingLosses
• thinQ
H
SiCSchottkydiode600V
MechanicalFeatures
• Al
2
O
3
SubstratewithLowThermalResistance
• Compactdesign
• PressFITContactTechnology
Rugged mounting due to integrated mounting
clamps
ModuleLabelCode
BarcodeCode128
ContentoftheCode
ModuleSerialNumber
ModuleMaterialNumber
ProductionOrderNumber
Datecode(ProductionYear)
Datecode(ProductionWeek)
dateofpublication:2013-03-19
revision:2.1
1
ULapproved(E83335)
Digit
1-5
6-11
12-19
20-21
22-23
DMX-Code
preparedby:CM
approvedby:MB
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