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IRFP9240R

Description
TRANSISTOR,MOSFET,P-CHANNEL,200V V(BR)DSS,12A I(D),TO-247
CategoryDiscrete semiconductor    The transistor   
File Size387KB,5 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric Compare View All

IRFP9240R Overview

TRANSISTOR,MOSFET,P-CHANNEL,200V V(BR)DSS,12A I(D),TO-247

IRFP9240R Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerRenesas Electronics Corporation
Reach Compliance Codenot_compliant
ConfigurationSingle
Maximum drain current (Abs) (ID)12 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee0
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)150 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Base Number Matches1

IRFP9240R Related Products

IRFP9240R IRFP9242R IRFP9241R IRFP9243R
Description TRANSISTOR,MOSFET,P-CHANNEL,200V V(BR)DSS,12A I(D),TO-247 IRFP9242R IRFP9241R IRFP9243R
Is it Rohs certified? incompatible incompatible incompatible incompatible
Maker Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation
Reach Compliance Code not_compliant not_compliant not_compliant not_compliant
Configuration Single Single Single Single
Maximum drain current (Abs) (ID) 12 A 10 A 12 A 10 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-609 code e0 e0 e0 e0
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Polarity/channel type P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL
Maximum power dissipation(Abs) 150 W 150 W 150 W 150 W
surface mount NO NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
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