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FFPF20U60DNTU_NL

Description
Rectifier Diode, Avalanche, 1 Phase, 2 Element, 20A, 600V V(RRM), Silicon, LEAD FREE, TO-220F, 3 PIN
CategoryDiscrete semiconductor    diode   
File Size106KB,5 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric View All

FFPF20U60DNTU_NL Overview

Rectifier Diode, Avalanche, 1 Phase, 2 Element, 20A, 600V V(RRM), Silicon, LEAD FREE, TO-220F, 3 PIN

FFPF20U60DNTU_NL Parametric

Parameter NameAttribute value
Parts packaging codeTO-220F
package instructionR-PSFM-T3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresHIGH RELIABILITY, FREE WHEELING DIODE
applicationHIGH VOLTAGE ULTRA FAST RECOVERY POWER
Shell connectionISOLATED
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Maximum non-repetitive peak forward current120 A
Number of components2
Phase1
Number of terminals3
Maximum output current20 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage600 V
Maximum reverse recovery time0.09 µs
surface mountNO
technologyAVALANCHE
Terminal surfaceMATTE TIN
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Base Number Matches1
FFPF20U60DN
FFPF20U60DN
Features
• High voltage and high reliability
• High speed switching
• Low forward voltage
Applications
General purpose
Switching mode power supply
Free-wheeling diode for motor application
Power switching circuits
TO-220F
1
2
3
1. Anode 2.Cathode 3. Anode
ULTRA FAST RECOVERY POWER RECTIFIER
Absolute Maximum Ratings
Symbol
V
RRM
I
F(AV)
I
FSM
T
J,
T
STG
(per diode) T
C
=25°C unless otherwise noted
°
Value
600
@ T
C
= 100°C
20
120
- 65 to +150
Units
V
A
A
°C
Parameter
Peak Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
Operating Junction and Storage Temperature
Thermal Characteristics
Symbol
R
θJC
Parameter
Maximum Thermal Resistance, Junction to Case
(per diode) T
C
=25
°
C unless otherwise noted
Min.
Typ.
Max.
Units
V
Value
1.25
Units
°C/W
Electrical Characteristics
Symbol
V
FM
*
Parameter
Maximum Instantaneous Forward Voltage
I
F
= 20A
I
F
= 20A
T
C
= 25
°C
T
C
= 100
°C
T
C
= 25
°C
T
C
= 100
°C
2.2
2.0
µA
10
100
90
8
360
1.0
ns
A
nC
mJ
I
RM
*
Maximum Instantaneous Reverse Current
@ rated V
R
Maximum Reverse Recovery Time
Maximum Reverse Recovery Current
Maximum Reverse Recovery Charge
(I
F
=20A, di/dt = 200A/µs)
Avalanche Energy
t
rr
I
rr
Q
rr
W
AVL
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%
©2000 Fairchild Semiconductor International
Rev. F, September 2000

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