MDE Semiconductor, Inc.
78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel : 760-564-8656 • Fax : 760-564-2414
1-800-831-4881 Email: sales@mdesemiconductor.com Web: www.mdesemiconductor.com
3KP SERIES
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR
VOLTAGE-5.0 TO 180 Volts
3000 Watt Peak Pulse Power
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94 V-O
• Glass passivated junction
• 3000W Peak Pulse Power
capability on 10/1000 µs waveform
• Glass passivated junction
• Low incremental surge resistance
• Excellent clamping capability
• Repetition rate (duty cycle): 0.05%
• Fast response time: typically less than
1.0 ps from 0 volts to BV
• Typical IR less than 1µA above 10V
• High temperature soldering guaranteed:
265°C/10 seconds/ .375", (9.5mm) lead
length, 5lbs., (2.3kg) tension
MECHANICAL DATA
Case: Molded plastic over glass passivated junction
Terminals: Plated Axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denoted positive end (cathode)
except Bipolar
Mounting Position: Any
Weight: 0.07 ounces, 2.1 grams
DEVICES FOR BIPOLAR APPLICATIONS
For Bidirectional use C or CA Suffix for types 3KP5.0 thru types 3KP180 (e.g. 3KP5.0C, 3KP180CA)
Electrical characteristics apply in both directions.
MAXIMUM RATINGS AND CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
RATING
Peak Pulse Power Dissipation on 10/1000 µs
waveform
(NOTE 1, Fig.1)
Peak Pulse Current of on 10/1000 µs waveform
(Note 1,Fig 3)
Steady State Power Dissipation at
T
L
= 75°C
Lead lengths .375", 9.5mm
(Note 2)
Peak Forward Surge Current, 8.3ms Single Half Sine-wave
Superimposed on Rated Load,
(JEDEC Method)(Note 3)
Operatings and Storage Temperature Range
SYMBOL
P
PPM
I
PPM
VALUE
Minimum 3000
SEE TABLE 1
8.0
250
-55 +175
UNITS
Watts
Amps
Watts
Amps
°C
P
M
(AV)
I
FSM
T
J
, T
STG
NOTES:
1. Non-repetitive current pulse, per Fig.3 and derated above Ta=25 °C per Fig.2.
2. Mounted on Copper Pad area of 0.8x0.8" (20x20mm) per Fig.5.
3. 8.3ms single half sine-wave, or equivalent square wave, Duty cycle=4 pulses per minutes maximum.
Certified RoHS Compliant
UL File # E223026
MDE Semiconductor, Inc.
78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel : 760-564-8656 • Fax : 760-564-2414
1-800-831-4881 Email: sales@mdesemiconductor.com Web: www.mdesemiconductor.com
RATING AND CHARACTERISTIC CURVES 3KP SERIES
Fig. 1 - Peak Pulse Power Rating Curve
100
Fig.2 - Pulse Derating
100
87.5
75
62.5
50
37.5
25
12.5
0
P
PP
M
-Peak Pulse Power (kW)
10
1
0.1
Peak Pulse Power (P )
PP
or Current (I
PP
)
Derating in Percentage,%
Non-repetitive pulse
waveform shown in
Fig.3 T
A
= 25°C
0.1µs
1.0µs
10µs
100µs
1.0ms
10ms
0
25
50
75
100
125
150
175
200
t
d
- Pulse Width (sec.)
T
A
- Ambient Temperature (°C)
10000
10000
Fig.3 - Pulse Waveform
I
PPM
- Peak Pulse Current,%
I
RSM
150
Fig. 4 - Typical Junction Capacitance
Unidirectional
Bidirectional
t
r
= 10µsec.
Peak Value
I
PPM
Half Value- I
PPM
2
T
J
= 25°C
C
J
- Capacitance (pF)
100
Pulse Width(td)is defined
as the point where the
peak current decays to
50% of I
PPM
1000
V
R
= 0
1000
100
50
10/1000µsec.Waveform
as defined by R.E.A.
100
V
R
= Rated
Stand off Voltage
f = 1MHz
Vsig = 50mVp-
p
10
100
1000
td
0
0
1.0
2.0
3.0
t - Time(ms)
3.0
10
4.0
10
1
5
4.0
10
500
VWM - Reverse Stand-Off Voltage (V)
Fig. 5 - Steady State Power
Derating Curve
8.0
7.0
60Hz
Resistive or
Inductive Load
L=0.375" (9.5mm)
Lead Lengths
Fig.6 - Maximum Non-Repetitive Forward
Surge Current Uni-Directional Only
300
8.3ms Single Half Sine-Wave
(JEDEC Method)T
J
=T
J
max.
250
P
M(AV)
,Steady State Power
Dissipation (W)
6.0
5.0
4.0
3.0
2.0
1.0
1.6x1.6x.040"
(40x40x1mm)
Copper Heat Sinks
0
0
0.2
0.4
0.6
0.8
1
1.2
I
FSM
-Peak Forward Surge
Current (A)
200
150
100
1
10
100
T
L
- Lead Temperature (°C)
Number of Cycles at 60 Hz
Microcontroller MCU
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