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IDT70V658

Description
64K X 36 DUAL-PORT SRAM, 12 ns, PBGA256
Categorystorage   
File Size196KB,23 Pages
ManufacturerIDT (Integrated Device Technology, Inc.)
Websitehttp://www.idt.com/
Download Datasheet Parametric Compare View All

IDT70V658 Overview

64K X 36 DUAL-PORT SRAM, 12 ns, PBGA256

IDT70V658 Parametric

Parameter NameAttribute value
Number of functions1
Number of terminals256
Minimum operating temperature-40 Cel
Maximum operating temperature85 Cel
Rated supply voltage3.3 V
Minimum supply/operating voltage3.15 V
Maximum supply/operating voltage3.45 V
Processing package description17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, BGA-256
each_compliYes
stateActive
sub_categorySRAMs
ccess_time_max12 ns
i_o_typeCOMMON
jesd_30_codeS-PBGA-B256
jesd_609_codee0
storage density2.36E6 bi
Memory IC typeDUAL-PORT SRAM
memory width36
moisture_sensitivity_level3
Number of ports2
Number of digits65536 words
Number of digits64K
operating modeASYNCHRONOUS
organize64KX36
Output characteristics3-STATE
Packaging MaterialsPLASTIC/EPOXY
ckage_codeLBGA
ckage_equivalence_codeBGA256,16X16,40
packaging shapeSQUARE
Package SizeGRID ARRAY, LOW PROFILE
serial parallelPARALLEL
eak_reflow_temperature__cel_225
wer_supplies__v_2.5/3.3,3.3
qualification_statusCOMMERCIAL
seated_height_max1.5 mm
standby_current_max0.0150 Am
standby_voltage_mi3.15 V
Maximum supply voltage0.5150 Am
surface mountYES
CraftsmanshipCMOS
Temperature levelINDUSTRIAL
terminal coatingTIN LEAD
Terminal formBALL
Terminal spacing1 mm
Terminal locationBOTTOM
ime_peak_reflow_temperature_max__s_20
length17 mm
width17 mm
HIGH-SPEED 3.3V 64K x 36
ASYNCHRONOUS DUAL-PORT
STATIC RAM
Features
True Dual-Port memory cells which allow simultaneous
access of the same memory location
High-speed access
– Commercial: 10/12/15ns (max.)
– Industrial: 12/15ns (max.)
Dual chip enables allow for depth expansion without
external logic
IDT70V658 easily expands data bus width to 72 bits or
more using the Master/Slave select when cascading more
than one device
M/S = V
IH
for
BUSY
output flag on Master,
M/S = V
IL
for
BUSY
input on Slave
Busy and Interrupt Flags
On-chip port arbitration logic
x
x
x
PRELIMINARY
IDT70V658S
x
x
x
x
x
x
x
x
x
x
x
x
Full on-chip hardware support of semaphore signaling
between ports
Fully asynchronous operation from either port
Separate byte controls for multiplexed bus and bus
matching compatibility
Supports JTAG features compliant to IEEE 1149.1
LVTTL-compatible, single 3.3V (±150mV) power supply
for core
LVTTL-compatible, selectable 3.3V (±150mV)/2.5V (±100mV)
power supply for I/Os and control signals on each port
Available in 208-pin Plastic Quad Flatpack, 208-ball fine
pitch Ball Grid Array, and 256-ball Ball Grid Array
Industrial temperature range (–40°C to +85°C) is available
for selected speeds
Functional Block Diagram
BE
3L
BE
2L
BE
3 R
BE
2 R
BE
1R
BE
0R
R/
W
R
B
E
0
L
B
E
1
L
B
E
2
L
B
E
3
L
B
E
3
R
BB
EE
2 1
RR
B
E
0
R
BE
1 L
BE
0L
R/
W
L
CE
0 L
CE1 L
CE
0 R
CE1R
OE
L
OE
R
Dout0-8_L
Dout9-17_L
Dout18-26_L
Dout27-35_L
Dout0-8_R
Dout9-17_R
Dout18-26_R
Dout27-35_R
64K x 36
MEMORY
ARRAY
I/O - I/O
0L
35L
Di n_L
Di n_R
I/O - I/O
0R
35R
A15 L
A0 L
Address
Decoder
ADDR_L
ADDR_R
Address
Decoder
A
15R
A
0R
CE
0 L
CE1L
OE
L
R/WL
ARBITRATION
INTERRUPT
SEMAPHORE
LOGIC
CE
0 R
CE1R
OE
R
R/WR
BUSY
R
BUSY
L
SEM
L
INT
L
M/S
SEM
R
INT
R
TDI
TDO
JTAG
TMS
TCK
TRST
5613 drw 01
NOTES:
1.
BUSY
is an input as a Slave (M/S=V
IL
) and an output when it is a Master (M/S=V
IH
).
2.
BUSY
and
INT
are non-tri-state totem-pole outputs (push-pull).
JUNE 2001
DSC-5613/3
1
©2001 Integrated Device Technology, Inc.

IDT70V658 Related Products

IDT70V658 IDT70V658S
Description 64K X 36 DUAL-PORT SRAM, 12 ns, PBGA256 64K X 36 DUAL-PORT SRAM, 12 ns, PBGA256
Number of functions 1 1
Number of terminals 256 256
Minimum operating temperature -40 Cel -40 Cel
Maximum operating temperature 85 Cel 85 Cel
Rated supply voltage 3.3 V 3.3 V
Minimum supply/operating voltage 3.15 V 3.15 V
Maximum supply/operating voltage 3.45 V 3.45 V
Processing package description 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, BGA-256 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, BGA-256
each_compli Yes Yes
state Active Active
sub_category SRAMs SRAMs
ccess_time_max 12 ns 12 ns
i_o_type COMMON COMMON
jesd_30_code S-PBGA-B256 S-PBGA-B256
jesd_609_code e0 e0
storage density 2.36E6 bi 2.36E6 bi
Memory IC type DUAL-PORT SRAM DUAL-PORT SRAM
memory width 36 36
moisture_sensitivity_level 3 3
Number of ports 2 2
operating mode ASYNCHRONOUS ASYNCHRONOUS
organize 64KX36 64KX36
Output characteristics 3-STATE 3-STATE
Packaging Materials PLASTIC/EPOXY PLASTIC/EPOXY
ckage_code LBGA LBGA
ckage_equivalence_code BGA256,16X16,40 BGA256,16X16,40
packaging shape SQUARE SQUARE
Package Size GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE
serial parallel PARALLEL PARALLEL
eak_reflow_temperature__cel_ 225 225
wer_supplies__v_ 2.5/3.3,3.3 2.5/3.3,3.3
qualification_status COMMERCIAL COMMERCIAL
seated_height_max 1.5 mm 1.5 mm
standby_current_max 0.0150 Am 0.0150 Am
standby_voltage_mi 3.15 V 3.15 V
Maximum supply voltage 0.5150 Am 0.5150 Am
surface mount YES YES
Craftsmanship CMOS CMOS
Temperature level INDUSTRIAL INDUSTRIAL
terminal coating TIN LEAD TIN LEAD
Terminal form BALL BALL
Terminal spacing 1 mm 1 mm
Terminal location BOTTOM BOTTOM
ime_peak_reflow_temperature_max__s_ 20 20
length 17 mm 17 mm
width 17 mm 17 mm
Number of digits 64K 64K

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