FT28C513E-90 datasheet, PDF - EEWORLD Datasheet

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FT28C513E-90: DescriptionEEPROM, 64KX8, 90ns, Parallel, CMOS, CQCC32, CERAMIC, LCC-32; Categorystorage storage; File Size396KB，25 Pages; ManufacturerForce Technologies Ltd.

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FT28C513E-90 Overview

EEPROM, 64KX8, 90ns, Parallel, CMOS, CQCC32, CERAMIC, LCC-32

FT28C513E-90 Parametric

Parameter Name	Attribute value
Maker	Force Technologies Ltd.
Parts packaging code	QFJ
package instruction	QCCN,
Contacts	32
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum access time	90 ns
Other features	100 YEAR DATA RETENTION
Data retention time - minimum	100
JESD-30 code	R-CQCC-N32
length	13.965 mm
memory density	524288 bit
Memory IC Type	EEPROM
memory width	8
Number of functions	1
Number of terminals	32
word count	65536 words
character code	64000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	64KX8
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	QCCN
Package shape	RECTANGULAR
Package form	CHIP CARRIER
Parallel/Serial	PARALLEL
Programming voltage	5 V
Maximum seat height	3.05 mm
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	QUAD
width	11.425 mm
Maximum write cycle time (tWC)	10 ms
Base Number Matches	1

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5 Volt Byte Alterable EEPROM

FT28C512/513

FEATURES

• Access time: 90ns

• Simple byte and page write

—Single 5V supply

• No external high voltages or V

control

circuits

—Self-timed

• No erase before write

• No complex programming algorithms

• No overerase problem

• Low power CMOS

—Active: 50mA

—Standby: 500µA

• Software data protection

—Protects data against system level inadvertent

writes

• High speed page write capability

• Highly reliable

—Endurance: 100,000 write cycles

—Data retention: 100 years

• Early end of write detection

—DATA polling

—Toggle bit polling

BLOCK DIAGRAM

X Buffers

Latches and

Decoder

• Two PLCC and LCC pinouts

—FT28C512

•

FT28C010

EPROM pin compatible

—FT28C513

• Compatible with lower density EEPROMs

DESCRIPTION

The

FT28C512/513

is a 64K x 8 EEPROM, fabricated

with

Force’s

proprietary, high performance, ﬂoating

gate CMOS technology.

The FT28C512/513 is a 5V only

device.

The

FT28C512/513

features the JEDEC

approved pin out for byte wide memories, compatible

with industry standard EPROMS.

The

FT28C512/513

supports a 128-byte page write

operation, effectively providing a 39µs/byte write cycle

and enabling the entire memory to be written in less

than 2.5 seconds. The

FT28C512/513

also features

DATA Polling and Toggle Bit Polling, system software

support schemes used to indicate the early completion

of a write cycle. In addition, the

FT28C512/513

supports

the software data protection option.

–A

512Kbit

EEPROM

Array

–A

Y Buffers

Latches and

Decoder

I/O Buffers

and Latches

Control

Logic and

Timing

I/O

–I/O

Data Inputs/Outputs

Rev A

1/25

2011

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