FDS6990S
May 2001
FDS6990S
Dual 30V N-Channel PowerTrench
®
SyncFET
™
General Description
The FDS6990S is designed to replace a dual SO-8
MOSFET and two Schottky diodes in synchronous
DC:DC power supplies. This 30V MOSFET is designed
to maximize power conversion efficiency, providing a
low R
DS(ON)
and low gate charge. Each MOSFET
includes integrated Schottky diodes using Fairchild’s
monolithic SyncFET technology. The performance of
the FDS6990S as the low-side switch in a synchronous
rectifier is similar to the performance of the FDS6990A
in parallel with a Schottky diode.
Features
•
7.5A, 30 V.
R
DS(ON)
= 22 mΩ @ V
GS
= 10 V
R
DS(ON)
= 30 mΩ @ V
GS
= 4.5 V
•
•
•
Includes SyncFET Schottky diode
Low gate charge (11 nC typical)
High performance trench technology for extremely low
R
DS(ON)
•
High power and current handling capability
Applications
•
DC/DC converter
•
Motor drives
D
D2
D2
D
D
D1
D1
D
5
Q1
4
3
2
Q2
6
7
G1
SO-8
Pin 1
SO-8
S1
G
G2
S
S2
S
8
1
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
T
A
=25 C unless otherwise noted
o
Parameter
Ratings
30
±20
(Note 1a)
Units
V
V
A
W
7.5
20
2
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
1.6
1
0.9
–55 to +150
°C
T
J
, T
STG
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDS6990S
©2001
Fairchild Semiconductor Corporation
Device
FDS6990S
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
FDS6990S Rev B(W)
FDS6990S
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSSF
I
GSSR
T
A
= 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
(Note 2)
Test Conditions
V
GS
= 0 V, I
D
= 1 mA
I
D
= 1 mA, Referenced to 25°C
V
DS
= 24 V,
V
GS
= 20 V,
V
GS
= –20 V
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
Min
30
Typ
Max
Units
V
Off Characteristics
23
500
100
–100
mV/°C
µA
nA
nA
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
V
DS
= V
GS
, I
D
= 1 mA
I
D
= 1 mA, Referenced to 25°C
V
GS
=
V
GS
=
V
GS
=
V
GS
=
10 V, I
D
= 7.5 A
10 V, I
D
= 7.5 A, T
J
=125°C
4.5 V, I
D
= 6.5 A
10 V,
V
DS
= 5 V
I
D
= 10 A
1
2.2
–6
17.5
27
24
3
V
mV/°C
22
35
30
mΩ
I
D(on)
g
FS
20
22
A
S
V
DS
= 15 V,
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
V
DS
= 15 V,
f = 1.0 MHz
V
GS
= 0 V,
1233
344
106
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
DS
= 15 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
Ω
8
5
25
11
16
10
40
20
16
ns
ns
ns
ns
nC
nC
nC
V
DS
= 15 V,
V
GS
= 5 V
I
D
= 10 A,
11
5
4
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
t
rr
Q
rr
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
V
GS
= 0 V, I
S
= 2.9 A
Voltage
Diode Reverse Recovery Time
I
F
= 10A
d
iF
/d
t
= 300 A/µs
Diode Reverse Recovery Charge
2.9
(Note 2)
A
V
nS
nC
0.5
17
0.7
(Note 3)
12.5
Notes:
1.
R
θJA
is the sum of the junction-to-case and case -to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a)
78°C/W when
mounted on a
0.5in
2
pad of 2
oz copper
b)
125°C/W when
mounted on a
0.02 in
2
pad of
2 oz copper
c)
135°C/W when
mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3.
See “SyncFET Schottky body diode characteristics” below.
FDS6990S Rev B (W)
FDS6990S
Typical Characteristics
V
GS
= 10V
I
D
, DRAIN CURRENT (A)
40
6.0V
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
50
5.0V
4.5V
2.6
V
GS
= 4.0V
2.2
30
4.0V
20
1.8
4.5V
5.0V
1.4
6.0V
8.0V
1
10V
10
3.5V
0
0
1
2
3
V
DS
, DRAIN-SOURCE VOLTAGE (V)
0.6
0
10
20
30
40
50
I
D
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.06
R
DS(ON)
, ON-RESISTANCE (OHM)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
1.9
I
D
= 7.5A
V
GS
= 10V
1.6
I
D
= 3.8A
0.05
0.04
o
1.3
0.03
T
A
= 125 C
1
0.02
T
A
= 25 C
0.01
o
0.7
0.4
-50
-25
0
25
50
75
100
o
125
150
0
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
T
J
, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with
Temperature.
I
S
, REVERSE DRAIN CURRENT (A)
50
V
DS
= 5V
I
D
, DRAIN CURRENT (A)
40
125 C
30
o
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
V
GS
= 0V
T
A
= -55 C
o
25 C
o
1
T
A
= 125 C
25 C
o
o
0.1
-55 C
o
20
0.01
10
0
1.5
0.001
2.5
3.5
4.5
5.5
0
0.2
0.4
0.6
0.8
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6990S Rev B (W)
FDS6990S
Typical Characteristics
10
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 10A
8
V
DS
= 5V
15V
10V
CAPACITANCE (pF)
2000
f = 1MHz
V
GS
= 0 V
1600
C
ISS
1200
6
4
800
C
OSS
400
C
RSS
2
0
0
3
6
9
12
15
18
21
Q
g
, GATE CHARGE (nC)
0
0
5
10
15
20
25
30
V
D S
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
P(pk), PEAK TRANSIENT POWER (W)
100
R
DS(ON)
LIMIT
I
D
, DRAIN CURRENT (A)
100
µ
s
10
1ms
10ms
100ms
1s
1
DC
V
GS
= 10V
SINGLE PULSE
o
R
θ
JA
= 135 C/W
T
A
= 25 C
0.01
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
o
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
R
θJA
= 135°C/W
T
A
= 25°C
40
30
10s
20
0.1
10
0
0.001
0.01
0.1
1
t
1
, TIME (sec)
10
100
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
R
θJA
(t) = r(t) + R
θJA
R
θJA
= 135 °C/W
P(pk)
t
1
t
2
T
J
- T
A
= P * R
θJA
(t)
Duty Cycle, D = t
1
/ t
2
0.01
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6990S Rev B (W)
FDS6990S
Typical Characteristics
(continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode
in parallel with PowerTrench MOSFET. This diode
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 12
shows the reverse recovery characteristic of the
FDS6990S.
Schottky barrier diodes exhibit significant leakage at
high temperature and high reverse voltage. This will
increase the power in the device.
I
DSS
, REVERSE LEAKAGE CURRENT (A)
0.1
125 C
0.01
o
0.001
3A/div
0.0001
25 C
o
0V
0.00001
0
10
20
30
V
DS
, REVERSE VOLTAGE (V)
10ns/div
Figure 12. FDS6990S SyncFET body
diode reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDS6990A).
Figure 14. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature.
3A/div
0V
10ns/div
Figure 13. Non-SyncFET (FDS6990A) body
diode reverse recovery characteristic.
FDS6990S Rev B (W)
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