LC35V1000BTS-70U datasheet, PDF

Ordering number : ENN*7056

CMOS IC

LC35V1000BM, BTS-70U

Asynchronous Silicon Gate

1M (131,072 words

×8

bits) SRAM

Preliminary

Overview

The LC35V1000BM and LC35V1000BTS-70U are

asynchronous silicon gate CMOS static RAM devices with

a 131,072-word by 8-bit structure. They provide two chip

enable pins (CE1 and CE2) for device select/deselect

control and one output enable pin (OE) for output control.

They feature high speed, low power, and a wide operating

temperature range.This makes them optimal for use in

systems that require high speed, low power, and battery

backup. They also support easy memory expansion.

Package Dimensions

unit: mm

3205A-SOP32

[LC35V1000BM-70U]

32

17

0.8

11.2

3.1max

0.15

0.2

(2.7)

20.5

Features

• Low-voltage operation: 3.0 to 3.6 V

• Wide operating temperature range: –40 to +85°C

• Access time: 70 ns (maximum): LC35V1000BM and

LC35V1000BTS-70U.

• Low current drain

Standby mode: 0.05 µA (typical*) at Ta = +25°C *:

When V

CC

= 3.0 V

10.0 µA (maximum) at Ta = +70°C

20.0 µA (maximum) at Ta = +85°C

• Data retention voltage: 2.0 to 3.6 V

• No clock required (fully static circuits)

• Input/output shared function pins, 3-state output pins

• Package

32-pin SOP (525 mil) plastic package:

LC35V1000BM

32-pin TSOP (8

×14

mm) plastic package:

LC35V1000BTS

1

(0.73)

1.27

0.4

16

SANYO: SOP32

unit: mm

3228A-TSOP32DA

[LC35V1000BTS-70U]

32

17

0.5

8.0

12.4

(0.25)

0.08

(1.0)

0.5

1.2max

1

16

0.2

0.125

SANYO: TSOP32DA

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

41902RM (OT) No. 7056-1/9

14.0

LC35V1000BM, BTS-70U

Pin Assignment

No. 7056-2/9

LC35V1000BM, BTS-70U

Block Diagram

Address buffer

Raw Decoder

Memory cell array

Output

buffer

Data control circuit

Input

data

buffer

Pin Functions

A0 to A16

WE

Address input

Ready/write control input

Output enable input

Chip enable input

Data I/O

Power supply, ground

Control

circuit

OE

CE, CE2

I/O1 to I/O8

V

CC

, GND

Function Table

Mode

Ready cycle

Write cycle

Output disable

Unselected

CE1

L

H

X

CE2

H

X

L

OE

L

X

H

X

WE

H

L

H

X

I/O

Data output

Data input

High impedance

Supply current

I

CCA

I

CCA

I

CCA

I

CCS

I

CCS

Note: X indicates H or L.

Specifications

Maximum Ratings

at Ta = 25°C

Parameter

Maximum supply voltage

Input pin voltage

I/O pin voltage

Operating temperature

Symbol

V

CC

max

V

IN

V

I/O

Topr

Conditions

Ratings

4.6

–0.3* to V

CC

+ 0.3

–0.3 to V

CC

+ 0.3

–40 to +85

–55 to +125

Unit

V

°C

Storage temperature

Tstg

*:

For pulse widths under 30 ns: –2.0 V

Note: This chip may be destroyed if any stress in excess of the absolute maximum ratings is applied.

I/O Capacitances

at Ta = 25°C, f = 1 MHz

Parameter

Input capacitance

I/O capacitance

Symbol

C

IN

C

I/O

V

IN

= 0 V

V

I/O

= 0 V

Conditions

Ratings

min

typ

6

max

10

Unit

pF

Note: These parameters are not measured for all devices, but are sampled values.

No. 7056-3/9

LC35V1000BM, BTS-70U

DC Allowable Operating Range

at Ta = –40 to +85°C

Parameter

Supply volgate

High-level input voltage

Low-level input voltage

Symbol

V

CC

V

IH

V

IL

Conditions

Ratings

min

3.0

0.8V

CC

–0.3*

typ

3.3

max

3.6

V

CC

+ 0.3

0.2V

CC

Unit

V

Note:

*

The minimum value is –2.0 V for pulse width under 30 ns.

DC Electrical Characteristics

at Ta = –40 to +85°C, V

CC

= 3.0 to 3.6 V

Parameter

Input leakage current

I/O leakage current

Outpu high-level voltage

Symbol

I

LI

I

LO

V

OH1

V

OH2

V

OL1

V

OL2

I

CCA2

I

CCA3

V

IN

= 0 to V

CC

V

CE1

= V

IH

or V

CE2

= V

IL

or V

OE

= V

IH

or

V

WE

= V

IL

, V

I/O

= 0 to V

CC

V

OH1

= –2.0 mA

V

OH2

= –100 µA

V

OL1

= 2.0 mA

V

OL2

= –100 µA

V

CE1

= V

IL

, V

CE2

= V

IH

, I

I/O

= 0 mA, V

IN

= V

IH

or V

IL

V

CE1

= V

IL

, V

CE2

= V

IH

,

I

I/O

= 0 mA, V

IN

= V

IH

or V

IL

, DUTY100%

V

CE2

≤

0.2 V or

I

CCS1

I

CCS2

(V

CE1

≥

V

CC

– 0.2 V,

V

CE2

≥

V

CC

– 0.2 V)

(CMOS inputs)

V

CE1

= V

IH

or V

CE2

= V

IL

, V

IN

= 0 to V

CC

min cycle

1 µs cycle

Ta

≤

85°C

Ta

≤

70°C

Ta

≤

25°C

0.05

0.4

mA

2

20

10

µA

Conditions

Ratings

min

–1.0

V

CC

– 0.4

V

CC

– 0.1

0.4

0.1

1.2

25

typ

max

+1.0

Unit

µA

V

mA

Outpu low-level voltage

Operating supply current

(CMOS inputs)

Standby mode supply current

(V

CC

– 0.2 V/0.2 V inputs)

Note:

*

Reference values when V

CC

= 3.0 V and Ta = 25°C.

No. 7056-4/9

LC35V1000BM, BTS-70U

AC Electrical Characteristics

at Ta = –40 to +85°C, V

CC

= 3.0 to 3.6 V

AC test conditions

Input pulse voltage levels: V

IL

= 0.2 V

CC

, V

IH

= 0.8 V

CC

Input rise and fall times: 5 ns

Input and output timing leves: 0.5 V

CC

Output load: 30 pF (including the jig capacitance)

Read cycle

Parameter

Read cyle time

Address access time

CE1 access time

CE2 access time

OE access time

Output hold time

CE1 output enable time

CE2 output enable time

OE output enable time

CE1 output disable time

CE2 output disable time

OE output disable time

Symbol

t

RC

t

AA

t

CA1

t

CA2

t

OA

t

OH

t

COE1

t

COE2

t

OCE

t

COD1

t

COD2

t

OOD

10

5

0

35

30

min

70

40

max

Unit

ns

Write cycle

Parameter

Write cyle time

Address setup time

Write pulse width

CE1 setup time

CE2 setup time

Write recovery time

OE1 write recovery time

CE2 write recovery time

Data setup time

Data hold time

OE1 data hold time

CE2 data hold time

WE output enable time

WE output disable time

Symbol

t

WC

t

AS

tWP

t

CW1

t

CW2

t

WR

t

WR1

t

WR2

t

DS

t

DH

t

DH1

t

DH2

t

WOE

t

WOD

min

70

0

50

60

0

40

0

5

35

max

Unit

ns

No. 7056-5/9

Parameter Name	Attribute value
Maker	ON Semiconductor
package instruction	TSSOP, TSSOP32,.56,20
Reach Compliance Code	compliant
Maximum access time	70 ns
I/O type	COMMON
JESD-30 code	R-PDSO-G32
memory density	1048576 bit
Memory IC Type	STANDARD SRAM
memory width	8
Number of terminals	32
word count	131072 words
character code	128000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	128KX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSSOP
Encapsulate equivalent code	TSSOP32,.56,20
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Parallel/Serial	PARALLEL
power supply	3.3 V
Certification status	Not Qualified
Minimum standby current	2 V
Maximum slew rate	0.025 mA
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
Base Number Matches	1

	LC35V1000BTS-70U
Description	IC,SRAM,128KX8,CMOS,TSSOP,32PIN,PLASTIC
Maker	ON Semiconductor
package instruction	TSSOP, TSSOP32,.56,20
Reach Compliance Code	compliant
Maximum access time	70 ns
I/O type	COMMON
JESD-30 code	R-PDSO-G32
memory density	1048576 bit
Memory IC Type	STANDARD SRAM
memory width	8
Number of terminals	32
word count	131072 words
character code	128000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	128KX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSSOP
Encapsulate equivalent code	TSSOP32,.56,20
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Parallel/Serial	PARALLEL
power supply	3.3 V
Certification status	Not Qualified
Minimum standby current	2 V
Maximum slew rate	0.025 mA
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
Base Number Matches	1

LC35V1000BTS-70U

LC35V1000BTS-70U Overview

LC35V1000BTS-70U Parametric

Preview

LC35V1000BTS-70U Related Products

Recommended Resources