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VS-50RIA100S90

Description
Silicon Controlled Rectifier, 80A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-208AC, TO-65, 2 PIN
CategoryAnalog mixed-signal IC    Trigger device   
File Size197KB,8 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
Download Datasheet Parametric View All

VS-50RIA100S90 Overview

Silicon Controlled Rectifier, 80A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-208AC, TO-65, 2 PIN

VS-50RIA100S90 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerVishay
package instructionPOST/STUD MOUNT, O-MUPM-D2
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Maximum DC gate trigger current100 mA
JEDEC-95 codeTO-208AC
JESD-30 codeO-MUPM-D2
JESD-609 codee3
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Peak Reflow Temperature (Celsius)NOT APPLICABLE
Maximum rms on-state current80 A
Off-state repetitive peak voltage1000 V
Repeated peak reverse voltage1000 V
surface mountNO
Terminal surfaceTin (Sn) - with Nickel (Ni) barrier
Terminal formSOLDER LUG
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT APPLICABLE
Trigger device typeSCR
Base Number Matches1
VS-50RIA Series
www.vishay.com
Vishay Semiconductors
Medium Power Phase Control Thyristors
(Stud Version), 50 A
FEATURES
High current rating
Excellent dynamic characteristics
dV/dt = 1000 V/μs option
Superior surge capabilities
Standard package
Metric threads version available
Types up to 1200 V V
DRM
/V
RRM
Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
TO-208AC (TO-65)
PRODUCT SUMMARY
Package
Diode variation
I
T(AV)
V
DRM
/V
RRM
V
TM
I
GT
T
J
TO-208AC (TO-65)
Single SCR
50 A
100 V to 1200 V
1.60 V
100 mA
-40 °C to 125 °C
TYPICAL APPLICATIONS
Phase control applications in converters
Lighting circuits
Battery charges
Regulated power supplies and temperature and speed
control circuit
• Can be supplied to meet stringent military, aerospace and
other high reliability requirements
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
V
DRM
/V
RRM
t
q
T
J
Typical
50 Hz
60 Hz
50 Hz
60 Hz
T
C
TEST CONDITIONS
VALUES
50
94
80
1430
1490
10.18
9.30
100 to 1200
110
-40 to 125
UNITS
A
°C
A
A
kA
2
s
V
μs
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
10
20
40
VS-50RIA
60
80
100
120
V
DRM
/V
RRM
, MAXIMUM REPETITIVE
PEAK AND OFF-STATE VOLTAGE
(1)
V
100
200
400
600
800
1000
1200
V
RSM
, MAXIMUM
I
DRM
/I
RRM
MAXIMUM AT
NON-REPETITIVE PEAK VOLTAGE
(2)
T
J
= T
J
MAXIMUM
mA
V
150
300
500
700
900
1100
1300
15
Notes
(1)
Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/μs
(2)
For voltage pulses with t
5 ms
p
Revision: 11-Mar-14
Document Number: 93711
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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