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2SC4738-GRLF(T

Description
Small Signal Bipolar Transistor
CategoryDiscrete semiconductor    The transistor   
File Size224KB,3 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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2SC4738-GRLF(T Overview

Small Signal Bipolar Transistor

2SC4738-GRLF(T Parametric

Parameter NameAttribute value
MakerToshiba Semiconductor
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknown
Maximum collector current (IC)0.15 A
Collector-based maximum capacity3.5 pF
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)200
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power consumption environment0.1 W
Maximum power dissipation(Abs)0.1 W
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)80 MHz
VCEsat-Max0.25 V
Base Number Matches1
2SC4738
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT process)
2SC4738
Audio Frequency General Purpose Amplifier Applications
High voltage and high current: V
CEO
= 50 V, I
C
= 150 mA (max)
Excellent h
FE
linearity: h
FE
(I
C
= 0.1 mA)/ h
FE
(I
C
= 2 mA)
= 0.95 (typ.)
High h
FE
: h
FE
= 120 to 700
Complementary to 2SA1832
Small package
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
60
50
5
150
30
100
125
−55
to 125
Unit
V
V
V
mA
mA
mW
°C
°C
JEDEC
JEITA
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-2H1A
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 2.4 mg (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
Test Condition
V
CB
=
60 V, I
E
=
0
V
EB
=
5 V, I
C
=
0
Min
120
80
Typ.
0.1
2.0
Max
0.1
0.1
700
0.25
3.5
V
MHz
pF
Unit
μA
μA
h
FE
V
CE
=
6 V, I
C
=
2 mA
(Note)
V
CE
(sat)
f
T
C
ob
I
C
=
100 mA, I
B
=
10 mA
V
CE
=
10 V, I
C
=
1 mA
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
Note: h
FE
classification
Y (Y): 120 to 240, GR (G): 200 to 400, BL (L): 350 to 700
( ) marking symbol
Marking
Start of commercial production
1990-10
1
2014-03-01

2SC4738-GRLF(T Related Products

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Description Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor TRANS NPN 50V 0.15A SSM TRANS NPN 50V 0.15A SSM TRANS NPN 50V 0.15A SSM

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